BD543
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BD543
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 70
Kollektor-Basis-Sperrspannung (Ucb): 40
Kollektor-Emitter-Sperrspannung (Uce): 40
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 8
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 3
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: TO220
Ersatz (vergleichstyp) für BD543
BD543
PDF doc:
1.1. bd543-a-b-c.pdf  Size:82K _bourns  |
 | BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
? Designed for Complementary Use with the
BD544 Series
TO-220 PACKAGE
(TOP VIEW)
? 70 W at 25°C Case Temperature
? 8 A Continuous Collector Current
B 1
? 10 A Peak Collector Current
C 2
? Customer-Specified Selections Available 3
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
BD543 40
BD543A 60
Collector-base voltage (IE = 0) VCBO V
BD543B 80
BD543C 100
BD543 40
BD543A 60
Collector-emitter voltage (IB = 0) VCEO V
BD543B 80
BD543C 100
Emitter-base voltage VEBO 5V
Continuous collector current IC 8A
Peak collector current (see Note 1) ICM 10 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 70 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Operating free air temperature range TA -65 to +150 °C
Operat |
1.2. bd543_a_b_c.pdf Size:119K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD543/A/B/C
DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type BD544/A/B/C Ў¤ 8 A continuous collector current Ў¤ 10 A peak Collector current
Ў¤
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25Ўж )
SYMBOL
PARAMETER
CONDITIONS
BD543 BD543A BD543B
VCBO
Collector-base voltage
VCEO
HAN INC
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
SEM GE
BD543C BD543 BD543A BD543B BD543C
Open emitter
OND IC
TOR UC
VALUE 40 60 80 100 40 60
UNIT
V
Open base 80 100 Open collector 5 8 10 TC=25Ўж 70 -65~150 -65~150 Ўж Ўж
V
VEBO IC ICM PC Tj Tstg
V A A W
Collector power dissipation Junction temperature Storage temperature
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Anderen transistoren... BD539B
, BD539C
, BD539D
, BD540
, BD540A
, BD540B
, BD540C
, BD540D
, BC147
, BD543A
, BD543B
, BD543C
, BD543D
, BD544
, BD544A
, BD544B
, BD544C
.
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