BD644F
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BD644F
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 62
Kollektor-Basis-Sperrspannung (Ucb): 45
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 8
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 1
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 750
Transistorgehäuse: ISO220
Ersatz (vergleichstyp) für BD644F
BD644F
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5.1. bd644-bd646-bd648-bd650-bd652.pdf  Size:363K _comset  |
 | 62.5 Watts
BD650
BD652
BD644
BD646
TJ Junction Temperature BD648
150
BD650
BD652
°C
BD644
BD646
Ts Storage Temperature range BD648 -65 to +150
BD650
BD652
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BD644
BD646
RthJ-MB From junction to mounting base BD648 2 K/W
BD650
BD652
BD644
BD646
RthJ-A From junction to ambient in free air BD648 70 K/W
BD650
BD652
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5.2. bd644.pdf Size:105K _inchange_semiconductor  |
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isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor BD644
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -45 V
Collector-Emitter Saturation Voltage IC= -3A; IBB= -12mA -2.0 V
VCE(sat)-1
Collector-Emitter Saturation Voltage IC= -5A; IBB= -50mA -2.5 V
VCE(sat)-2
Base-Emitter Saturati |
Anderen transistoren... BD634
, BD635
, BD636
, BD637
, BD638
, BD643
, BD643F
, BD644
, BC547
, BD645
, BD645F
, BD646
, BD646F
, BD647
, BD647F
, BD648
, BD648F
.
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