BD751B
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BD751B
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 250
Kollektor-Basis-Sperrspannung (Ucb): 110
Kollektor-Emitter-Sperrspannung (Uce): 140
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 20
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 4
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 25
Transistorgehäuse: TO3
Ersatz (vergleichstyp) für BD751B
BD751B
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1.1. bd751b_751c.pdf  Size:113K _inchange_semiconductor  |
 | 51B/751C
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD751B 100
VCEO(SUS) Collector-Emitter IC=100mA ; IB=0 V
Sustaining Voltage
BD751C 130
BD751B IC= 7.5A; IB= 0.75A 1.5
Collector-Emitter
V
VCE(sat) Saturation Voltage
BD751C IC= 5A; IBB= 0.5A 1.0
BD751B IC= 7.5A; IB= 0.75A 1.8
Base-Emitter
V
VBE(sat) Saturation Voltage
BD751C IC= 5A; IBB= 0.5A 1.8
BD751B 0.5
VCEV= 110V;VBE(off)= 1.5V
ICEV Collect |
5.1. bd751_751a.pdf Size:113K _inchange_semiconductor  |
 |
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD751 90
VCEO(SUS) Collector-Emitter IC=100mA ; IB=0 V
Sustaining Voltage
BD751A 120
BD751 IC= 7.5A; IB= 0.75A 1.5
Collector-Emitter
V
VCE(sat) Saturation Voltage
BD751A IC= 5A; IBB= 0.5A 1.0
BD751 IC= 7.5A; IB= 0.75A 1.8
Base-Emitter
V
VBE(sat) Saturation Voltage
BD751A IC= 5A; IBB= 0.5A 1.8
BD751 0.5
VCEV= 100V;VBE(off)= 1.5V
ICEV Collector mA
Cutoff |
Anderen transistoren... BD746E
, BD746F
, BD750
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, BD750C
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.
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