| |
2N2907ACSM4
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N2907ACSM4
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.4
Kollektor-Basis-Sperrspannung (Ucb): 60
Kollektor-Emitter-Sperrspannung (Uce): 60
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.6
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 200
Kollektor-Kapazität (Cc), pF: 8
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: LCC3
Ersatz (vergleichstyp) für 2N2907ACSM4
2N2907ACSM4
- PDF-Dokument zum Download bereitstellen...
3.1. mtp2n2907a.pdf  Size:240K _motorola  |
 | 0)
Collector–Base Breakdown Voltage V(BR)CBO –60 — Vdc
(IC = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO –5.0 — Vdc
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current ICEX — –50 nAdc
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current ICBO µAdc
(VCB = –50 Vdc, IE = 0) — –0.01
(VCB = –50 Vdc, IE = 0, TA = 150°C) — –10
Emitter Cutoff Current IEBO — –10 nAdc
(VEB = –3.0 Vdc)
Collector Cutoff Current ICEO — –10 nAdc
(VCE = –10 V)
Base Cutoff Current IBEX — –50 nA |
3.2. 2n2907_2n2907a_1.pdf Size:52K _philips  |
 | 10 V 100 300
fT transition frequency IC = -50 mA; VCE = -20 V; f = 100 MHz 200 - MHz
toff turn-off time ICon = -150 mA; IBon = -15 mA; IBoff =15mA - 300 ns
1997 May 30 2
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --60 V
VCEO collector-emitter voltage open base; IC <-100 mA
2N290 |
3.3. 2n2905a_2n2907a.pdf Size:727K _st  |
 | unction-Ambient Max 250 375 C/W
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off VCB = -50 V -10 nA
Current (I = 0) V = -50 V T = 150 oC -10 µA
E CB j
ICEX Collector Cut-off VCE = -30 V -50 nA
Current (VBE = 0.5V)
IBEX Base Cut-off Current VCE = -30 V -50 nA
(VBE = 0.5V)
V Collector-Base IC = -10 µA -60 V
(BR)CBO
Breakdown Voltage
(IE = 0)
V(BR)CEO? Collector-Emitter IC = -10 mA -60 V |
3.4. 2n2907_2n2907a(to-18).pdf Size:453K _mcc _0001.jpg) |
_0002.jpg) | @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
Collector cut-off current
(VCB=50Vdc, IE=0) 2N2907
--- 20 nAdc
ICBO (VCB=50Vdc, IE=0,TA=150 ?)
--- 20 uAdc
(VCB=50Vdc, IE=0) 2N2907A --- 10 nAdc
(VCB=50Vdc, IE=0,TA=150 ?)
--- 10 uAdc
DIMENSIONS
--- 50 nAdc
IEBO Emitter Cut-off current INCHES MM
(IC=0, VEB=5.0Vdc)
DIM MIN MAX MIN MAX NOTE
DC Current Gain 2N2907
A .209 .230 5.309 5.842 ?
(IC=0.1mAdc, VCE=10Vdc) 35
B .178 . |
3.5. p2n2907a.pdf Size:162K _onsemi  |
 | ed
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
907A
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
P2N2907AG TO--92 5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92
2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part |
3.6. 2n2907aua.pdf Size:95K _optek 3.7. 2n2907aub.pdf Size:242K _optek  |
 | . . . . . . . . . . . . . . . . -65o C to +200o C
stg
Power Dissipation @ T = 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W
•Qualification per MIL-PRF-19500/291 A
Power Dissipation @ T = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W(1)
C
Description Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C
Soldering Temperature (heated collet for 5 sec.) . . . . . . . . . . . . |
Anderen transistoren... 2N2906A
, 2N2906ACSM
, 2N2906ADCSM
, 2N2906AQF
, 2N2906CSM
, 2N2907
, 2N2907A
, 2N2907ACSM
, 2N1711
, 2N2907AQF
, 2N2907AUB
, 2N2907CSM
, 2N2908
, 2N2909
, 2N291
, 2N2910
, 2N2911
.
|
