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2N2909
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N2909
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.4
Kollektor-Basis-Sperrspannung (Ucb): 60
Kollektor-Emitter-Sperrspannung (Uce): 40
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 1
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 50
Kollektor-Kapazität (Cc), pF: 20
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: TO46
Ersatz (vergleichstyp) für 2N2909
2N2909
- PDF-Dokument zum Download bereitstellen...
5.1. 2n2900.pdf  Size:155K _rca 5.2. mtp2n2907a.pdf Size:240K _motorola  |
 | 0)
Collector–Base Breakdown Voltage V(BR)CBO –60 — Vdc
(IC = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO –5.0 — Vdc
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current ICEX — –50 nAdc
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current ICBO µAdc
(VCB = –50 Vdc, IE = 0) — –0.01
(VCB = –50 Vdc, IE = 0, TA = 150°C) — –10
Emitter Cutoff Current IEBO — –10 nAdc
(VEB = –3.0 Vdc)
Collector Cutoff Current ICEO — –10 nAdc
(VCE = –10 V)
Base Cutoff Current IBEX — –50 nA |
5.3. 2n2905_2n2905a_cnv_2.pdf Size:55K _philips  |
 | 600 mW
hFE DC current gain IC = -150 mA; VCE = -10 V 100 300
fT transition frequency IC = -50 mA; VCE = -20 V; f = 100 MHz 200 - MHz
toff turn-off time ICon = -150 mA; IBon = -15 mA; IBoff =15mA - 300 ns
1997 May 28 2
Philips Semiconductors Product specification
PNP switching transistors 2N2905; 2N2905A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --60 V
VCEO collec |
5.4. 2n2906_2n2906a_2.pdf Size:52K _philips  |
 | urrent gain IC = -150 mA; VCE = -10 V 40 120
fT transition frequency IC = -50 mA; VCE = -20 V; f = 100 MHz 200 - MHz
toff turn-off time ICon = -150 mA; IBon = -15 mA; IBoff =15mA - 300 ns
1997 Jun 02 2
Philips Semiconductors Product specification
PNP switching transistors 2N2906; 2N2906A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --60 V
VCEO collector-emitter volta |
5.5. 2n2907_2n2907a_1.pdf Size:52K _philips  |
 | 10 V 100 300
fT transition frequency IC = -50 mA; VCE = -20 V; f = 100 MHz 200 - MHz
toff turn-off time ICon = -150 mA; IBon = -15 mA; IBoff =15mA - 300 ns
1997 May 30 2
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --60 V
VCEO collector-emitter voltage open base; IC <-100 mA
2N290 |
5.6. 2n2904-2n2905-2n2906-2n2907.pdf Size:73K _st  |
 | 2N2906-2N2907
THERMAL DATA
2N2904 2N2906
2N2905 2N2907
Rth j-case Thermal Resistance Junction-case Max 58.3 °C/W 97.3 °C/W
Rth j-amb Thermal Resistance Junction-ambient Max 292 °C/W 437.5 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current VCB = – 50 V – 20 nA
(IE =0) VCB = – 50 V Tamb =150 °C – 20 µA
ICE X Collector Cutoff Current nA
VCE = – 30 V – 50
(VBE = 0.5 V)
IBEX Base Cut |
5.7. 2n2905a_2n2907a.pdf Size:727K _st  |
 | unction-Ambient Max 250 375 C/W
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off VCB = -50 V -10 nA
Current (I = 0) V = -50 V T = 150 oC -10 µA
E CB j
ICEX Collector Cut-off VCE = -30 V -50 nA
Current (VBE = 0.5V)
IBEX Base Cut-off Current VCE = -30 V -50 nA
(VBE = 0.5V)
V Collector-Base IC = -10 µA -60 V
(BR)CBO
Breakdown Voltage
(IE = 0)
V(BR)CEO? Collector-Emitter IC = -10 mA -60 V |
5.8. 2n2903.pdf Size:83K _central 5.9. 2n2904-a_2n2905-a.pdf Size:59K _central 5.10. 2n2906_2n2907.pdf Size:96K _central 5.11. 2n2907_2n2907a(to-18).pdf Size:453K _mcc _0001.jpg) |
_0002.jpg) | @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
Collector cut-off current
(VCB=50Vdc, IE=0) 2N2907
--- 20 nAdc
ICBO (VCB=50Vdc, IE=0,TA=150 ?)
--- 20 uAdc
(VCB=50Vdc, IE=0) 2N2907A --- 10 nAdc
(VCB=50Vdc, IE=0,TA=150 ?)
--- 10 uAdc
DIMENSIONS
--- 50 nAdc
IEBO Emitter Cut-off current INCHES MM
(IC=0, VEB=5.0Vdc)
DIM MIN MAX MIN MAX NOTE
DC Current Gain 2N2907
A .209 .230 5.309 5.842 ?
(IC=0.1mAdc, VCE=10Vdc) 35
B .178 . |
5.12. 2n2905a(to-39).pdf Size:229K _mcc _0001.jpg) |
_0002.jpg) | orporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Autho |
5.13. p2n2907a.pdf Size:162K _onsemi  |
 | ed
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
907A
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
P2N2907AG TO--92 5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92
2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part |
5.14. 2n2907aua.pdf Size:95K _optek 5.15. 2n2907aub.pdf Size:242K _optek  |
 | . . . . . . . . . . . . . . . . -65o C to +200o C
stg
Power Dissipation @ T = 25o C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 W
•Qualification per MIL-PRF-19500/291 A
Power Dissipation @ T = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16 W(1)
C
Description Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . . . . 215o C
Soldering Temperature (heated collet for 5 sec.) . . . . . . . . . . . . |
5.16. 2n2905.pdf Size:70K _advanced-semi  |
 | z 2 MHz
Cob = -1 = 1 K z 8. pF
Cib = -2. = 1 K z pF
ton = - I = 15 I = 15 45 nS
td = - I = 15 I = 15 1 nS
tr = - I = 15 I = 15 4 nS
toff = -6. I = 15 , I = I = 15 1 nS
ts = -6. I = 15 , I = I = 15 8 nS
tf = -6. I = 15 , I = I = 15 nS
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004 2/2
|
5.17. 2n2904e.pdf Size:51K _kec  |
 | e Temperature Range
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
ZC
1 2 3
2008. 9. 23 Revision No : 3 1/4
C
A
A1
C
D
H
J
2N2904E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEX VCE=30V, VEB=3V
Collector Cut-off Current - - 50 nA
IBL VCE=30V, VEB=3V
Base Cut-off Current - - 50 nA
V(BR)CBO
Collector-Base Breakdown Voltage IC=10 A, IE=0 60 - - V
V(BR)CEO IC=1mA, IB=0
Collector-Emitter Breakdown Voltage * 40 - - V
|
5.18. 2n2904u.pdf Size:51K _kec  |
 | Storage Temperature Range
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
Z A
1 2 3
2008. 9. 23 Revision No : 1 1/4
C
A
A1
C
H
2N2904U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEX VCE=30V, VEB=3V
Collector Cut-off Current - - 50 nA
IBL VCE=30V, VEB=3V
Base Cut-off Current - - 50 nA
V(BR)CBO
Collector-Base Breakdown Voltage IC=10 A, IE=0 60 - - V
V(BR)CEO IC=1mA, IB=0
Collector-Emitter Breakdown Voltage * 40 - - V |
5.19. 2n2904u1.pdf Size:51K _kec  |
 | torage Temperature Range
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
Z A
1 2 3
2008. 9. 23 Revision No : 1 1/4
C
A
A1
C
H
2N2904U1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEX VCE=30V, VEB=3V
Collector Cut-off Current - - 50 nA
IBL VCE=30V, VEB=3V
Base Cut-off Current - - 50 nA
V(BR)CBO
Collector-Base Breakdown Voltage IC=10 A, IE=0 60 - - V
V(BR)CEO IC=1mA, IB=0
Collector-Emitter Breakdown Voltage * 40 - - V |
5.20. 2n2906e.pdf Size:50K _kec  |
 | 5 150
Storage Temperature Range
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
ZA
1 2 3
2008. 9. 23 Revision No : 3 1/2
C
A
A1
C
D
H
J
2N2906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEX VCE=-30V, VEB=-3V
Collector Cut-off Current - - -50 nA
IBL VCE=-30V, VEB=-3V
Base Cut-off Current - - -50 nA
V(BR)CBO
Collector-Base Breakdown Voltage IC=-10 A, IE=0 -40 - - V
V(BR)CEO IC=-1mA, IB=0
Collector-Emitter Breakdo |
5.21. 2n2906u.pdf Size:52K _kec  |
 | tg -55 150
Storage Temperature Range
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
ZC
1 2 3
2008. 9. 23 Revision No : 1 1/4
C
A
A1
C
H
2N2906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEX VCE=-30V, VEB=-3V
Collector Cut-off Current - - -50 nA
IBL VCE=-30V, VEB=-3V
Base Cut-off Current - - -50 nA
V(BR)CBO
Collector-Base Breakdown Voltage IC=-10 A, IE=0 -40 - - V
V(BR)CEO IC=-1mA, IB=0
Collector-Emitter Breakdow |
Anderen transistoren... 2N2907
, 2N2907A
, 2N2907ACSM
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, 2N2913DCSM
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, 2N2914DCSM
.
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