BDT41C
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BDT41C
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 65
Kollektor-Basis-Sperrspannung (Ucb): 140
Kollektor-Emitter-Sperrspannung (Uce): 140
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 6
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 3
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 15
Transistorgehäuse: TO220
Ersatz (vergleichstyp) für BDT41C
BDT41C
- PDF-Dokument zum Download bereitstellen...
5.1. bdt41_a_b_c.pdf  Size:158K _inchange_semiconductor  |
 | j-c
Thermal Resistance,Junction to Ambient 70 ?/W
Rth j-a
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors BDT41/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDT41 40
BDT41A 60
VCEO(SUS) Collector-Emitter IC= 30mA; IB= 0 V
Sustaining Voltage
BDT 41B 80
BDT 41C 100
Collector-Emitter Saturation Voltage IC= 6A; IBB= 0.6A 1.5 V
VCE(sat)
Base-Emit |
5.2. bdt41f-af-bf-cf.pdf Size:107K _inchange_semiconductor  |
 | e 6.3 ?/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors BDT41F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDT41F 40
BDT41AF 60
VCEO(SUS) Collector-Emitter IC= 30mA; IB= 0 V
Sustaining Voltage
BDT41BF 80
BDT41CF 100
Collector-Emitter Saturation Voltage IC= 6A; IBB= 0.6A 1.5 V
VCE(sat)
Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 |
5.3. bdt41f_af_bf_cf.pdf Size:107K _inchange_semiconductor  |
 | e 6.3 ?/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors BDT41F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDT41F 40
BDT41AF 60
VCEO(SUS) Collector-Emitter IC= 30mA; IB= 0 V
Sustaining Voltage
BDT41BF 80
BDT41CF 100
Collector-Emitter Saturation Voltage IC= 6A; IBB= 0.6A 1.5 V
VCE(sat)
Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 |
Anderen transistoren... BDT32CF
, BDT32DF
, BDT32F
, BDT41
, BDT41A
, BDT41AF
, BDT41B
, BDT41BF
, 8050
, BDT41CF
, BDT41F
, BDT42
, BDT42A
, BDT42AF
, BDT42B
, BDT42BF
, BDT42C
.
|
