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BDY27A
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BDY27A
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 87
Kollektor-Basis-Sperrspannung (Ucb): 400
Kollektor-Emitter-Sperrspannung (Uce): 200
Emitter-Basis-Sperrspannung (Ueb): 10
Kollektorstrom (Ic): 6
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 10
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 15
Transistorgehäuse: TO3
Ersatz (vergleichstyp) für BDY27A
BDY27A
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5.1. bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf  Size:258K _comset  |
 | 2°C/W
BDY28, 185T2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol Ratings Min Typ Mx Unit
BDY26, 183T2 180 - -
BDY27, 184T2 200 - -
IC=50 mA, IB=0
VCEO(BR) Collector-Emitter BDY28A, 185T2A 250 - - V
Breakdown Voltage (*)
BDY28B, 185T2B 250 - -
BDY28C, 185T2C 220 - -
VCE=180 V BDY26 - -
Collector-Emitter Cutoff
VCE=200 V BDY27 - - 1.0 mA
ICEO Current
VCE=250 V BDY28 - -
BDY26, 183T2
IEBO Emitter-Base Cutoff Current VEB=10 V BDY27, 184T2 - - |
5.2. bdy27.pdf Size:246K _inchange_semiconductor  |
 | otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 200 V
V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 400 V
Collector-Emitter Saturation Voltage IC= 2A; IBB= 0.25A 0.6 V
VCE(sat)
Base-Emitter Saturation Voltage IC= 2A; IBB= 0.25A 1.2 V
VBE(sat)
ICES Collector Cutoff Current VCE= 300V; VBE= 0 1.0 mA
ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA
IEBO Emitter Cutoff Current VEB= 10V; I |
Anderen transistoren... BDY25A
, BDY25B
, BDY25C
, BDY26
, BDY26A
, BDY26B
, BDY26C
, BDY27
, BC109C
, BDY27B
, BDY27C
, BDY28
, BDY28A
, BDY28B
, BDY28C
, BDY29
, BDY34
.
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