BF483
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BF483
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.83
Kollektor-Basis-Sperrspannung (Ucb): 300
Kollektor-Emitter-Sperrspannung (Uce): 250
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.05
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 90
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 50
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für BF483
BF483
- PDF-Dokument zum Download bereitstellen...
1.1. bf483_bf485_bf487.pdf  Size:62K _philips  |
 | 830 mW
hFE DC current gain IC = 25 mA; VCE =20V 50 -
Cre feedback capacitance IC =ic = 0; VCE = 30 V; f = 1 MHz - 1.4 pF
fT transition frequency IC = -10 mA; VCE = 10 V; f = 100 MHz 70 110 MHz
1996 Dec 09 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF483; BF485; BF487
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF483 - 300 V
BF485 - |
1.2. bf483_bf485_bf487_3.pdf Size:47K _philips  |
 | - 5V
IC collector current (DC) - 100 mA
ICM peak collector current - 200 mA
IBM peak base current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 830 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Transistor mounted on a printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF483; BF485; BF487
THERMAL CHARACTERISTICS
SYMBOL PARAMETE |
Anderen transistoren... BF471S
, BF472
, BF472S
, BF479
, BF479S
, BF479T
, BF480
, BF481
, 2N60
, BF484
, BF485
, BF486
, BF487
, BF488
, BF491
, BF491K
, BF491L
.
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