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BF494A
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BF494A
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 20
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 0.03
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 260
Kollektor-Kapazität (Cc), pF: 1.6
Kurzschluss-Stromverstärkung (hfe): 200
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für BF494A
BF494A
- PDF-Dokument zum Download bereitstellen...
5.1. bf494_bf495.pdf  Size:48K _philips  |
 | amb ? 25 °C - 300 mW
hFE DC current gain IC = 1 mA; VCE =10V
BF494 67 220
BF495 35 125
fT transition frequency IC = 1 mA; VCE = 10 V; f = 100 MHz 120 - MHz
1997 Jul 08 2
Philips Semiconductors Product specification
NPN medium frequency transistors BF494; BF495
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 20 V
VEBO |
5.2. bf494.pdf Size:81K _fairchild_semi  |
 | less otherwise noted
Symbol Parameter Conditions Min. Max. Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 20 V
V(BR)CBO Collector-Base BreakdownVoltage IC = 10µA, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
ICES Collector-Emitter Sustaining Current VCE = 40V, VEB = 0V 10 nA
hFE DC Current Gain VCE = 10V, IC = 1mA 67 222
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 5mA 0.2 V
VBE(sat) Base-Emitter Saturation Voltage IC |
Anderen transistoren... BF493M
, BF493P1
, BF493P2
, BF493P5
, BF493Q
, BF493S
, BF493SP
, BF494
, 2SC114
, BF494B
, BF494C
, BF494D
, BF495
, BF495B
, BF495C
, BF495D
, BF496
.
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