BF747
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BF747
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.35
Kollektor-Basis-Sperrspannung (Ucb): 20
Kollektor-Emitter-Sperrspannung (Uce): 20
Emitter-Basis-Sperrspannung (Ueb): 3
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 600
Kollektor-Kapazität (Cc), pF: 1.2
Kurzschluss-Stromverstärkung (hfe): 20
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für BF747
BF747
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1.1. bf747_2.pdf  Size:75K _philips  |
 | V; f = 500 MHz 1.2 1.6 GHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCEO collector-emitter voltage open base - 20 V
VCBO collector-base voltage open emitter - 30 V
VEBO emitter-base voltage open collector - 3 V
ICM peak collector current - 50 mA
Ptot total power dissipation up to Ts =70 °C; note 1 - 300 mW
Tstg storage temperatu |
1.2. bf747.pdf Size:108K _philips  |
 | 10 V; f = 500 MHz 1.2 1.6 GHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCEO collector-emitter voltage open base - 20 V
VCBO collector-base voltage open emitter - 30 V
VEBO emitter-base voltage open collector - 3 V
ICM peak collector current - 50 mA
Ptot total power dissipation up to Ts =70°C; note 1 - 300 mW
Tstg storage temperat |
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