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BFP13
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BFP13
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 1.25
Kollektor-Basis-Sperrspannung (Ucb): 350
Kollektor-Emitter-Sperrspannung (Uce): 300
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.5
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 60
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für BFP13
BFP13
PDF doc:
1.1. bfp136w.pdf  Size:60K _siemens  |
 | BFP 136W
NPN Silicon RF Transistor
• For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFP 136W PAs Q62702-F1575 1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 12 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 2
Collector current IC 150 mA
Base current IB 20
Total power dissipation Ptot mW
TS ? 60 °C 1000
Junction temperature Tj 150 °C
Ambient temperature TA - 65 ... + 150
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
1)
Junction - soldering point RthJS ? 90 K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol V |
Anderen transistoren... BFN27
, BFN36
, BFN37
, BFN38
, BFN39
, BFP10
, BFP11
, BFP12
, TIP122
, BFP14
, BFP17
, BFP180
, BFP181
, BFP181T
, BFP182
, BFP182T
, BFP183
.
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