BFT25R
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BFT25R
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.03
Kollektor-Basis-Sperrspannung (Ucb): 8
Kollektor-Emitter-Sperrspannung (Uce): 5
Emitter-Basis-Sperrspannung (Ueb): 2
Kollektorstrom (Ic): 2.5
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 1200
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 20
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BFT25R
BFT25R
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5.1. bft25_cnv_2.pdf  Size:51K _philips  |
 | mA; VCE = 1 V; f = 500 MHz; 2.3 - GHz
Tamb =25 °C
Cre feedback capacitance IC = 1 mA; VCE = 1 V; f = 1 MHz; - 0.45 pF
Tamb =25 °C
GUM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; 18 - dB
Tamb =25 °C
F noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; 3.8 - dB
Tamb =25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 8V
VCEO collector-emitter voltage ope |
5.2. bft25a.pdf Size:93K _philips  |
 | ral power Tamb = 25 °C;
gain f = 1 GHz
F noise figure ? = ?opt; IC = 0.5 mA; - 1.8 - dB
VCE = 1 V;
Tamb =25°C; f = 1 GHz
? = ?opt; IC = 1 mA; - 2 - dB
VCE = 1 V;
Tamb =25°C; f = 1 GHz
[1] Ts is the temperature at the soldering point of the collector tab.
BFT25A
Philips Semiconductors
NPN 5 GHz wideband transistor
2. Pinning information
Table 2: Discrete pinning
Pin Description Simplified outline Symbol
Code: V10
3
3
1 base
2 emitter
1
3 collector
2
12
sym021
SOT23
3. O |
5.3. bft25a_cnv_3.pdf Size:83K _philips  |
 | - - 32 mW
note 1
hFE DC current gain IC = 0.5 mA; VCE = 1 V 50 80 200
fT transition frequency IC = 1 mA; VCE = 1 V; 3.5 5 - GHz
Tamb =25°C; f = 500 MHz
GUM maximum unilateral power IC = 0.5 mA; VCE = 1 V; - 15 - dB
gain Tamb = 25 °C; f = 1 GHz
F noise figure ? = ?opt; IC = 0.5 mA; VCE = 1 V; - 1.8 - dB
Tamb =25°C; f = 1 GHz
? = ?opt; IC = 1 mA; VCE = 1 V; - 2 - dB
Tamb =25°C; f = 1 GHz
Note
1. Ts is the temperature at the soldering point of the collector tab.
December 1997 2
Phili |
5.4. bft25_cnv.pdf Size:204K _philips  |
 |
Tamb =25?C
Cre feedback capacitance IC =1mA; VCE = 1 V; f = 1 MHz; ? 0.45 pF
Tamb =25?C
GUM maximum unilateral power gain IC =1mA; VCE = 1 V; f = 500 MHz; 18 ? dB
Tamb =25?C
Fnoise figure IC =1mA; VCE = 1 V; f = 500 MHz; 3.8 ? dB
Tamb =25?C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter ? 8V
VCEO collector-emitter voltage open base ? 5V
VEBO emitter-base voltage open collec |
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