BLV94
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BLV94
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 12.5
Kollektor-Basis-Sperrspannung (Ucb): 36
Kollektor-Emitter-Sperrspannung (Uce): 0
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 3
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 900
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 25
Transistorgehäuse: M118
Ersatz (vergleichstyp) für BLV94
BLV94
PDF doc:
1.1. blv946.pdf Size:86K _philips |
| DISCRETE SEMICONDUCTORS
DATA SHEET
BLV946
UHF power transistor
1997 Oct 30
Product specification
Supersedes data of 1995 Jun 29
Philips Semiconductors Product specification
UHF power transistor BLV946
FEATURES PINNING - SOT273A
• Internal input and output matching for easy matching,
PIN DESCRIPTION
high gain and efficiency
1 emitter
• Poly-silicon emitter ballasting resistors for an optimum
2 emitter
temperature profile
3 collector
• Gold metallization ensures excellent reliability.
4 base
5 emitter
APPLICATIONS
6 emitter
• Base stations in the 850 to 960 MHz frequency range.
DESCRIPTION
2 4 6
handbook, halfpage
NPN silicon planar transistor intended for common emitter
class-AB operation. The transistor has internal input and
output matching by means of MOS capacitors.
The encapsulation is a SOT273A flange envelope with a
ceramic cap. All leads are isolated from the flange.
1 3 5
Top view MBK131
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DA |
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