BSP31T3 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BSP31T3

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 1.5

Kollektor-Basis-Sperrspannung (Ucb): 70

Kollektor-Emitter-Sperrspannung (Uce): 60

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 100

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 100

Transistorgehäuse: SOT23

Ersatz (vergleichstyp) für BSP31T3

BSP31T3 - PDF-Dokument zum Download bereitstellen...

5.1. bsp31_bsp32_bsp33_3.pdf Size:49K _philips

--5V IC collector current (DC) --1A ICM peak collector current --2A IBM peak base current --200 mA Ptot total power dissipation Tamb =25 °C; note 1 - 1.3 W Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C Tamb operating ambient temperature -65 +150 °C Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associa

5.2. bsp31_bsp33.pdf Size:46K _st

March 2003 BSP31 BSP33 THERMAL DATA o Rthj-amb • Thermal Resistance Junction-Ambient Max 96.1 C/W • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = -60 V -100 nA CBO CB Current (IE = 0) VCB = -60 V Tj = 150 oC -50 µA IEBO Emitter Cut-off Current VEB = -5 V -100 nA (IC = 0) V(BR)CBO Collector-Base IC = -100 µA Breakdown Voltage for BSP31 -

5.3. bsp30_bsp31_bsp32_bsp33.pdf Size:73K _st

• Thermal Resistance Junction-Collecor Tab Max 8 C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off VCB = -60 V -100 nA Current (I = 0) V = -60 V T = 150 oC -50 µA E CB j V(BR)CBO Collector-Base IC = -100 µA Breakdown Voltage for BSP30/BSP31 -70 V (IE = 0) for BSP32/BSP33 -90 V V(BR)CEO? Collector-Emitter IC = -10 mA Breakdown V

5.4. bsp318.pdf Size:232K _siemens

y category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 60 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA 1.2 1.6 2 Zero gate voltage drain current IDSS

5.5. bsp31_bsp33.pdf Size:43K _diodes

5.6. bsp318s.pdf Size:76K _infineon

IEC 68-1 55/150/56 Page 1 1999-10-28 Final data BSP318S Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - 17 - K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint - 100 - @ 6 cm2 cooling area 1) - - 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS

5.7. bsp319.pdf Size:115K _infineon

DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25?C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA, Tj = 0 ?C 50 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA 1.2 1.6 2 Zero gate voltage drain current IDSS µA VDS = 50

5.8. bsp315p_rev1.5.pdf Size:471K _infineon

temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev.1.5 Page 1 2008-03-26 BSP315P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 25 K/W (Pin 4) SMD version, device on PCB: RthJA K/W @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. St

5.9. bsp317p_rev21.pdf Size:406K _infineon

teristics - 15 25 K/W Thermal resistance, junction - soldering point RthJS (Pin 4) SMD version, device on PCB: RthJA @ min. footprint - 80 115 @ 6 cm2 cooling area 1) - 48 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS -250 - - V VGS=0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) -1 -1.5 -2 ID=-370µA µA Zero gate voltage drain current IDSS

5.10. bsp315p.pdf Size:94K _infineon

56 Page 1 1999-11-22 Preliminary data BSP 315 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 25 K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS -60 - -

5.11. bsp316.pdf Size:118K _infineon

y pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25?C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = -0.25 mA, Tj = 25 ?C -100 - - Gate threshold voltage VGS(th) VGS=VDS, ID = -1 mA -0.8 -1.1 -2 Zero gate voltage drain current IDSS VDS = -100 V, VGS = 0 V, Tj = 25 ?C - -0.1 -1 µA VDS = -100 V, VGS = 0 V, Tj = 125 ?C - -1

5.12. bsp317.pdf Size:116K _infineon

mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25?C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = -0.25 mA, Tj = 25 ?C -200 - - Gate threshold voltage VGS(th) VGS=VDS, ID = -1 mA -0.8 -1.1 -2 Zero gate voltage drain current IDSS VDS = -200 V, VGS = 0 V, Tj = 25 ?C - -0.1 -1 µA VDS = -200 V, VGS = 0 V, Tj = 125 ?C - -10 -100 V

5.13. bsp316p_rev1.6.pdf Size:444K _infineon

al resistance, junction - soldering point RthJS (Pin 4) SMD version, device on PCB: RthJA @ min. footprint - 80 115 @ 6 cm2 cooling area 1) - 48 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS -100 - - V VGS=0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) -1 -1.5 -2 ID=-170µA µA Zero gate voltage drain current IDSS VDS=-100V, VGS=0, Tj=25°C -

Anderen transistoren... BSP19AT1 , BSP20 , BSP20AT1 , BSP30 , BSP30T1 , BSP30T3 , BSP31 , BSP31T1 , BC517 , BSP32 , BSP32T1 , BSP32T3 , BSP33 , BSP33T1 , BSP33T3 , BSP40 , BSP41 .