C1004
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: C1004
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 60
Kollektor-Emitter-Sperrspannung (Uce): 60
Emitter-Basis-Sperrspannung (Ueb): 1
Kollektorstrom (Ic): 0
Höchste Sperrschichttemperatur (Tj), °C: 175
Transitfrequenz (ft): 50
Kollektor-Kapazität (Cc), pF: 4
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: TO106
Ersatz (vergleichstyp) für C1004
C1004
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1.1. msc1004m.pdf  Size:44K _st  |
 | - 65 to +150
THERMAL DATA
°C/W
RTH(j-c)
Junction-Case Thermal Resistance* 5
*Applies only to rated RF amplifier operation
June 12, 1995 1/3
MSC1004M
ELECTRICAL SPECIFICATIONS (T = 25°C)
case
STATIC
Value
Symbol Test Conditions Unit
Min. Typ. Max.
BV IC = 1 mA IE = 0 mA 45 — — V
CBO
BV IC = 5 mA RBE = 10 ? 45 — — V
CER
BV 3.5 — — V
EBO I = 1 mA I = 0mA
E C
I — 1.0 mA
CES V = 28 V ?
CE
h 30 — 300 —
FE V = 5 V I = 200 mA
CE C
DYNAMIC
Value
Symbol Test Conditions Unit
|
1.2. msc1004mp.pdf Size:42K _st  |
 | STG - 65 to +150
THERMAL DATA
°C/W
RTH(j-c)
Junction-Case Thermal Resistance* 5
*Applies only to rated RF amplifier operation
June 12, 1995 1/3
MSC1004MP
ELECTRICAL SPECIFICATIONS (T = 25°C)
case
STATIC
Value
Symbol Test Conditions Unit
Min. Typ. Max.
BV IC = 1 mA IE = 0 mA 45 — — V
CBO
BV IC = 5 mA RBE = 10 ? 45 — — V
CER
BV 3.5 — — V
EBO I = 1 mA I = 0mA
E C
I — 1.0 mA
CES V = 28 V ?
CE
h 30 — 300 —
FE V = 5 V I = 200 mA
CE C
DYNAMIC
Value
Symbol Test Conditions U |
Anderen transistoren... C055P
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|
