C441 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

�A DC Current Gain hFE1 VCE=(�)5V, IC=(�)50mA 100* 400* hFE2 VCE=(�)5V, IC=(�)400mA 60 Gain-Bandwidth Product fT VCE=(�)10V, IC=(�)10mA 120 MHz * : 2SA1683/2SC4414 are classified by 50mA hFE as follows : 100 R 200 140 S 280 200 T 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft�s control systems, or other applications whose failure

1.3. 2sc4412.pdf Size:24K _sanyo

typ max Collector Cutoff Current ICBO VCB=200V, IE=0 0.1 �A Emitter Cutoff Current IEBO VCE=4V, IC=0 0.1 �A hFE1 VCE=6V, IC=0.1mA 100* 320* DC Current Gain hFE2 VCE=6V, IC=1mA 100 Marking : QT Continued on next page. * : The 2SC4412 is classsified by 0.1mA hFE as follows. Rank 4 5 hFE 100 to 200 160 to 320 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-supp

1.4. 2sc4413.pdf Size:90K _sanyo

tions Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 �A Emitter Cutoff Current IEBO VEB=10V, IC=0 0.1 �A DC Current Gain hFE VCE=5V, IC=10mA 800 1500 3200 Gain-Bandwidth Product fT VCE=10V, IC=10mA 200 MHz Output Capacitance Cob VCB=10V, f=1MHz 1.5 pF Marking : GY Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft�s co

1.5. 2sc4410.pdf Size:37K _panasonic

E = 1V, IC = 1mA 50 200 Transition frequency fT VCE = 1V, IC = 1mA, f = 800MHz 4 GHz Collector output capacitance Cob VCB = 1V, IE = 0, f = 1MHz 0.4 pF Foward transfer gain | S21e |2 VCE = 1V, IC = 1mA, f = 800MHz 6.0 dB Maximum unilateral power gain GUM VCE = 1V, IC = 1mA, f = 800MHz 15 dB Noise figure NF VCE = 1V, IC = 1mA, f = 800MHz 3.5 dB Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure. 1 +0.1 0.3 �0 2.0 � 0.2 1.3 �

1.6. 2sc4417.pdf Size:36K _panasonic

= 0 45 V Collector to emitter voltage VCEO IE = 1mA, IB = 0 35 V Emitter to base voltage VEBO IE = 10� A, IC = 0 4 V Forward current transfer ratio hFE VCB = 10V, IE = �10mA 20 50 100 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA 0.5 V Transition frequency fT VCB = 10V, IE = �10mA, f = 200MHz 500 MHz Common emitter reverse transfer capacitance Cre VCB = 10V, IE = �1mA, f = 10.7MHz 1.5 pF 1 +0.1 0.3 �0 2.0 � 0.2 1.3 � 0.1 0.65 0.65 +0.1 0.15 �0.05 0.9

1.7. 2sc4417_e.pdf Size:40K _panasonic

1.8. 2sc4410_e.pdf Size:41K _panasonic

1.9. 2sc4419.pdf Size:158K _fuji

1.10. 2sc4416.pdf Size:56K _hitachi

IE = 0, f = 1 MHz Gain bandwidth product fT 3.0 3.8 � GHz VCE = 5 V, IC = 20 mA Conversion gain CG 15 19 � dB VCC = 5 V, IC = 0.8 mA, fin = 900 MHz, fOSC = 930 MHz (�5dBm), fout = 30 MHz Noise figure NF � 8 1.2 dB Note: Marking is �XB��. 2 2SC4416 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve 200 150 VCE = 5 V 160 100 120 80 50 40 0 1 2 5 10 20 50 0 50 100 150 Collector Current IC (mA) Ambient Temperature Ta (�C) Collector Output

1.11. ktc4419.pdf Size:450K _kec

erature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=500V, IE=0 Collector Cut-off Current - - 100 A IEBO VEB=7V, IC=0 Emitter Cut-off Current - - 100 A V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 400 - - V hFE(1) VCE=4V, IC=0.1A 20 - - DC Current Gain hFE(2) VCE=4V, IC=1.5A 10 - 40 VCE(sat) IC=1.5A, IB=0.3A Collector-Emitter Saturation Voltage - - 0.5 V VBE(sat)

1.12. bc440_bc441_bc460_bc461.pdf Size:128K _microelectronics

1.13. 2sc4418.pdf Size:25K _sanken-ele

133 1.5 10 �5 0.15 �0.3 1max 2.5max 0.5max b. Lot No. IC�VCE Characteristics (Typical) VCE(sat),VBE(sat)�IC Temperature Characteristics (Typical) IC�VBE Temperature Characteristics (Typical) (IC/IB=5) (VCE=4V) 5 5 VCE(sat) �55?C (Case Temp) 2 4 4 25?C (Case Temp) 125?C (Case Temp) 3 3 VBE(sat) 1 2 2 1 1 0 0 0 0 1 2 3 4 0.01 0.05 0.1 0.5 1 5 0 1.0 1.6 Collector-Emitter Voltage VCE(V) Collector Current IC(A) Base-Emittor Voltage VBE(V) hFE�IC Characteristics (Typical) ton�tst

1.14. 2sc4419.pdf Size:163K _inchange_semiconductor

PN Power Transistors 2SC4419 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=900V ;IE=0 1.0 m

1.15. 2sc4418.pdf Size:114K _inchange_semiconductor

tage IC=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 ?A IEBO Emitter cut-off current VEB=10V; IC=0 100 ?A hFE DC current gain IC=1.5A ; VCE=4V 10 30 COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF fT Transition frequency IE=-0.3A ; VCE=12V 20 MHz Switching times ton Turn-on time 1.0 ?s IC=1.5A; IB1=0.15A IB2=-0.3A ts Storage t

Anderen transistoren... C40-28 , C407 , C420 , C424 , C425 , C426 , C428 , C434 , BD139 , C442 , C450 , C5 , C50-28 , C5-8 , C5-8Z , C5T2192 , C5T2432 .


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