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2N3450
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N3450
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.6
Kollektor-Basis-Sperrspannung (Ucb): 120
Kollektor-Emitter-Sperrspannung (Uce): 60
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.8
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF: 15
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: TO5
Ersatz (vergleichstyp) für 2N3450
2N3450
PDF doc:
1.1. 2n3498_2n3499_2n3450_2n3451.pdf  Size:69K _microsemi  |
 | TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices Qualified Level
JAN
2N3498 2N3499 2N3500 2N3501 JANTX
2N3498L 2N3499L 2N3500L 2N3501L JANTXV
JANS
MAXIMUM RATINGS
2N3498* 2N3500*
Ratings Symbol 2N3499* 2N3501* Unit
Collector-Emitter Voltage 100 150 Vdc
VCEO
Collector-Base Voltage 100 150 Vdc
VCBO
Emitter-Base Voltage 6.0 6.0 Vdc
VEBO
TO-5*
Collector Current 500 300 mAdc
IC
2N3498L, 2N3499L
Total Power Dissipation @ T = 250C (1) 1.0 W
A
PT
2N3500L, 2N3501L
@ T = 250C (2) 5.0 W
C
0
Operating & Storage Junction Temp. Range -55 to +200 C
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance: Junction-to-Case 35
R?JC
0
C/W
TO-39* (TO-205AD)
Junction-to-Ambient 175
R?JA
2N3498, 2N3499
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
2N3500, 2N3501
1) Derate linearly 5.71 W/0C for T > 250C
A
2) D |
Anderen transistoren... 2N3444S
, 2N3445
, 2N3446
, 2N3447
, 2N3448
, 2N3449
, 2N345
, 2N34-5
, 2N3053
, 2N3451
, 2N346
, 2N3461
, 2N3462
, 2N3463
, 2N3464
, 2N3467
, 2N3467S
.
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