D45VH8 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: D45VH8

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 75

Kollektor-Basis-Sperrspannung (Ucb): 60

Kollektor-Emitter-Sperrspannung (Uce): 60

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 15

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 25

Kollektor-Kapazität (Cc), pF: 400

Kurzschluss-Stromverstärkung (hfe): 40

Transistorgehäuse: TOP66

Ersatz (vergleichstyp) für D45VH8

D45VH8 - PDF-Dokument zum Download bereitstellen...

5.1. d44vh_d45vh.pdf Size:92K _motorola

IIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII Collector–Emitter Voltage VCEO IIIIIIII Vdc 80 IIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII Collector–Emitter Voltage VCEV IIIIIIII Vdc 100 IIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII I

5.2. d44vh10_d45vh10.pdf Size:84K _onsemi

IIIIIII III IIIIIIIIIIII III IIII III IIII III CASE 221A-09 Emitter Base Voltage VEB 7.0 Vdc IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII III TO-220AB Adc Collector Current -Continuous IC 15 IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII III -Peak (Note 1) ICM 20 IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII III PD Total Power Dissipation @ TC = 25°C 83 W x = 4 or 5 IIIIIIIIIIII III IIII A = Assembly Location Derate above 25°C 0.67III W/°C Y = Year IIIIIIIIIII

5.3. d45vhseries.pdf Size:163K _inchange_semiconductor

rmal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D45VH 1 -30 D45VH 4 -45 VCEO(SUS) Collector-Emitter IC= -25mA ;IBB= 0 V Sustaining Voltage D45VH 7 -60 D45VH 10 -80 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A -1.0 V VCE(sat)-1

5.4. d45vhserie.pdf Size:113K _inchange_semiconductor

rmal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D45VH 1 -30 D45VH 4 -45 VCEO(SUS) Collector-Emitter IC= -25mA ;IBB= 0 V Sustaining Voltage D45VH 7 -60 D45VH 10 -80 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A -1.0 V VCE(sat)-1

Anderen transistoren... D45VH1 , D45VH10 , D45VH2 , D45VH3 , D45VH4 , D45VH5 , D45VH6 , D45VH7 , MJE13003 , D45VH9 , D45VM1 , D45VM10 , D45VM2 , D45VM3 , D45VM4 , D45VM5 , D45VM6 .