2N35 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: 2N35

Werkstoff: Ge

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.05

Kollektor-Basis-Sperrspannung (Ucb): 40

Kollektor-Emitter-Sperrspannung (Uce): 25

Emitter-Basis-Sperrspannung (Ueb): 10

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 85

Transitfrequenz (ft): 0.4

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 25

Transistorgehäuse: TO22

Ersatz (vergleichstyp) für 2N35

2N35 - PDF-Dokument zum Download bereitstellen...

1.1. 2n32_2n33_2n34_2n35.pdf Size:395K _rca

1.2. 2n351.pdf Size:271K _rca

1.3. 2n105_2n206_2n247_2n269_2n301_2n301a_2n331_2n356_2n357_2n358.pdf Size:319K _rca

1.4. 2n3553.pdf Size:45K _philips

V 500 - RF performance f VCE Po Gp ? (MHz) (V) (W) (dB) (%) 175 28 2.5 >10 >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the us

1.5. 2n3583_2n3584_2n3585.pdf Size:430K _central

TC=150°C - 3.0 - - - - mA ICEV VCE=300V, VEB=1.5V, TC=150°C - - - 3.0 - 3.0 mA ICEO VCE=150V - 10 - 5.0 - 5.0 mA IEBO VBE=6.0V - 5.0 - 0.5 - 0.5 mA BVCEO IC=200mA 175 - 250 - 300 - V VCE(SAT) IC=1.0A, IB=125mA - 5.0 - 0.75 - 0.75 V VBE(SAT) IC=1.0A, IB=100mA - - - 1.4 - 1.4 V VBE(ON) VCE=10V, IC=1.0A - 1.4 - 1.4 - 1.4 V hFE VCE=10V, IC=100mA 40 - 40 - 40 - hFE VCE=10V, IC=500mA 40 200 - - - - hFE VCE=2.0V, IC=1.0A - - 8.0 80 8.0 80 hFE VCE=10V, IC=1.0A 10 - 25 100 25 100 fT VCE=10V,

1.6. 2n3567_2n3568_2n3569_pn3567_pn3568_pn3569.pdf Size:64K _central

1.7. 2n3500-2n3501.pdf Size:67K _central

1.8. 2n3583-2n3584-2n3585.pdf Size:160K _comset

Ratings Min Typ Mx Unit 2N3583 - - 10 Collector-Emitter cut-off IB = 0 ; VCE = 150 V ICEO 2N3584 - - 5 current 2N3585 - - 5 VBE = -1.5V ; VCE = 225 V 2N3583 VBE = -1.5V ; VCE = 340 V 2N3584 1 VBE = -1.5V ; VCE = 450 V 2N3585 Collector-Emitter cut-off mA ICEX VBE = -1.5V ; VCE = 225 V current 2N3583 Tj= 150°C - - 3 2N3584 VBE = -1.5V ; VCE = 300 V Tj= 150°C 2N3585 2N3583 - - 5 2N3584 - - 0.5 IEBO Emitter cut-offcurrent IC = 0 ; VEB = 6 V 2N3585 - - 0.5

1.9. 2n3535.pdf Size:11K _semelab

is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 1-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

1.10. 2n3502_2n3503_2n3504_2n3505.pdf Size:23K _semelab

Voltage -60V -45V VEBO Emitter – Base Voltage -5V -5V 2N3502 2N3504 Maximum Power Dissipation 2N3503 2N3505 3 W 1.3 W PD Total Dissipation @ 25°C Case Temperature 0.7 W 0.4 W PD Total Dissipation@ 25°C Free Air Temperature -65°C to +200°C TJ Storage Temperature 200°C Operating Junction Temperature Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Prelim. 4/99 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk min. 4.32 (0.170) 12.7 (0.500) 5.33 (0.

1.11. 2n3536.pdf Size:20K _semelab

y Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 1-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

1.12. 2n3558.pdf Size:11K _semelab

is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 1-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

1.13. 2n3537.pdf Size:11K _semelab

is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 1-Aug-02 E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

1.14. 2n3570.pdf Size:16K _advanced-semi

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.

1.15. 2n3583_2n3584_2n3585_2n4240_2n6420_2n6421_2n6422_2n6423.pdf Size:224K _bocasemi

1.16. 2n3548_2n930.pdf Size:147K _microelectronics

1.17. 2n3506.pdf Size:45K _semicoa

-- V IC = 10 µA Collector-Emitter Breakdown Voltage V(BR)CEO 40 --- V IC = 10 mA Emitter-Base Breakdown Voltage V(BR)EBO 5.0 --- V IE = 10 µA Collector-Emitter Cutoff Current ICEX1 --- 1.0 µA VCE = 40 V, VEB = 4 V Collector-Emitter Cutoff Current ICEX2 --- 1.0 µA VCE = 40 V, VEB = 4 V, TA = +150oC Collector Current Continuous IC 3.0 --- A VCB = 50 V ON Characteristics Symbol Min Max Unit DC Current Gain IC = 500 mA, VCE = 1 V (pulsed) hFE1 50 250 --- IC = 1.5 A, VCE = 2 V

1.18. 2n3507.pdf Size:46K _semicoa

µA Collector-Emitter Breakdown Voltage V(BR)CEO 50 --- V IC = 10 mA Emitter-Base Breakdown Voltage V(BR)EBO 5.0 --- V IE = 10 µA Collector-Emitter Cutoff Current ICEX1 --- 1.0 µA VCE = 60 V, VEB = 4 V Collector-Emitter Cutoff Current ICEX2 --- 1.0 µA VCE = 60 V, VEB = 4 V, TA = +150oC Collector Current Continuous IC 3.0 --- A VCB = 50 V ON Characteristics Symbol Min Max Unit DC Current Gain ICV ) h 35 175 -- =500 V m ( A pu , sedl - =1 CE FE1 I = 1.5 A, VCE = 2 V (pu

1.19. 2n3584.pdf Size:130K _inchange_semiconductor

TER MAX UNIT Thermal resistance junction to case 5.0 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 250 V Collector-emitter saturation voltage IC=1A; IB=0.125A 0.75 V VCE(sat) Base-emitter saturation voltage IC=1A ;IB=0.1A 1.4 V VBE(sat) Base -emitter on voltage IC=1A ; V

1.20. 2n3583.pdf Size:181K _inchange_semiconductor

CHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 175 V Collector-Emitter Saturation Voltage IC= 1A; IBB= 0.125A 5.0 V VCE(sat) Base-Emitter On Voltage IC= 1A ; VCE= 10V 1.4 V VBE(on) ICEO Collector Cutoff Current VCE= 150V; IB= 0 10 mA VCE= 225V; VBE(off)= 1.5V 1.0 ICEX Coll

1.21. 2n3585.pdf Size:153K _inchange_semiconductor

ER MAX UNIT Rth j-C Thermal resistance junction to case 5.0 ?/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 300 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.125A 0.75 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.4 V VBE Base -emitter on voltage IC=1A ; VCE=10V 1

Anderen transistoren... 2N3496 , 2N3497 , 2N3498 , 2N3498S , 2N3499 , 2N3499S , 2N349A , 2N34A , RCA1001 , 2N350 , 2N3500 , 2N3500S , 2N3501 , 2N3501CSM4 , 2N3501DCSM , 2N3501L , 2N3501S .