DTB113ES . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: DTB113ES

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 0.3

Kollektor-Basis-Sperrspannung (Ucb): 50

Kollektor-Emitter-Sperrspannung (Uce): 0

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 0.5

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 140

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 33

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für DTB113ES

DTB113ES - PDF-Dokument zum Download bereitstellen...

3.1. dtb113ek.pdf Size:135K _rohm

GND(+) unit (pieces) Part No. DTB113EK IN OUT GND(+) ? Absolute maximum ratings (Ta=25?C) R1=R2=1.0k? Limits Parameter Symbol Unit DTB113EK Supply voltage VCC -50 V Input voltage VIN -10 to +10 V Output current IC -500 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C www.rohm.com 2009.06 - Rev.B 1/2 0c 2009 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3Min. DTB113EK Data Sheet ? Electrical characteristics (Ta=25?

4.1. dtb113zk.pdf Size:156K _rohm

unit (pieces) GND(+) Part No. DTB113ZK IN OUT GND(+) Absolute maximum ratings (Ta=25°C) R1=1.0k?, R2=10k? Limits Parameter Symbol Unit DTB113ZK Supply voltage VCC -50 V Input voltage VIN -10 to +5 V Output current IC -500 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C www.rohm.com 2009.05 - Rev.B 1/2 0c 2009 ROHM Co., Ltd. All rights reserved. 1.6 2.8 0.3Min. DTB113ZK Data Sheet Electrical characteristics (Ta=

5.1. pdtb114et_4.pdf Size:49K _motorola

ymbol. 3 collector/output QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base - - -50 V IO output current (DC) - - -500 mA ICM peak collector current - - -500 mA Ptot total power dissipation Tamb ? 25 °C - - 250 mW hFE DC current gain IC = -50 mA; VCE = -5V 56 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 1997 Sep 02 2 Philips Semiconductors Objective specification PNP resistor-equipped transis

5.2. pdtb114et_p09_ sot23.pdf Size:26K _motorola

ymbol. 3 collector/output QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base - - -50 V IO output current (DC) - - -500 mA ICM peak collector current - - -500 mA Ptot total power dissipation Tamb ? 25 °C - - 250 mW hFE DC current gain IC = -50 mA; VCE = -5V 56 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 1997 Sep 02 2 Philips Semiconductors Objective specification PNP resistor-equipped transis

5.3. pdtb114et_4.pdf Size:49K _philips

ymbol. 3 collector/output QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base - - -50 V IO output current (DC) - - -500 mA ICM peak collector current - - -500 mA Ptot total power dissipation Tamb ? 25 °C - - 250 mW hFE DC current gain IC = -50 mA; VCE = -5V 56 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 1997 Sep 02 2 Philips Semiconductors Objective specification PNP resistor-equipped transis

5.4. dtb114ek.pdf Size:356K _rohm

No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTB114EK SMT3 2928 T146 180 8 3,000 F14 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.C 1/5 Data Sheet DTB114EK ?Absolute maximum ratings (Ta = 25?C) Parameter Symbol Values Unit VCC Supply voltage ?50 V VIN Input voltage ?40 to ?10 V IC Output current ?500 mA Power dissipation PD *2 200 mW Tj Junction temperature 150 ?C Tstg Range of storage temperature ?55 to ?150 ?C ?Electrical char

5.5. dtb114gk.pdf Size:77K _rohm

atings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA ? Collector power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Each pin mounted on the recommended land Rev.B 1/2 1.6 2.8 0.3Min. DTB114GK Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-bas

5.6. dtb114tk.pdf Size:60K _rohm

B : Base Code T146 Part No. Basic ordering unit (pieces) 3000 R1=10k? DTB114TK Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Rev.B 1/2 1.6 2.8 0.3Min. DTB114TK Transistors External characteristics (Ta=25°C) Paramete

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