DTC114EKA >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

ITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA ICM peak collector current - - 100 mA Ptot total power dissipation Tamb ? 25 �C - - 250 mW hFE DC current gain IC = 5 mA; VCE =5V 30 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 - R1 1998 Nov 26 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK LIMITING VALUES In accordance with the Absolute Maximum Rating S

2.2. pdtc114ek_3.pdf Size:57K _philips

3.1. pdtc114eu_4.pdf Size:58K _motorola

2 emitter/ground symbol. 3 collector/output 1999 Apr 16 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - 40 V negative --10 V IO output current (DC

3.2. pdtc114es_3.pdf Size:57K _motorola

tter voltage open base - - 50 V IO output current (DC) - - 100 mA ICM peak collector current - - 100 mA Ptot total power dissipation Tamb ? 25 �C - - 500 mW hFE DC current gain IC = 5 mA; VCE =5V 30 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 R1 1998 Nov 26 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN

3.3. pdtc114ee_4.pdf Size:56K _motorola

e Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative --10 V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 150 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating amb

3.4. pdtc114eef_2.pdf Size:55K _motorola

base/input 2 emitter/ground 3 collector/output QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA ICM peak collector current - - 100 mA Ptot total power dissipation Tamb ? 25 �C - - 250 mW hFE DC current gain IC = 5 mA; VCE =5V 30 - - R1 input resistor 7 10 13 k? R2 ------- resistor ratio 0.8 1 1.2 R1 1999 May 31 2 Philips Semiconductors Product specification NPN resistor-equip

3.5. pdtc114et_7.pdf Size:56K _motorola

round symbol. 3 collector/output 1999 Apr 15 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - 40 V negative --10 V IO output current (DC) - 100 mA

3.6. pdtc114e_series.pdf Size:174K _philips

114EK SOT346 SC-59 04 PDTA114EK PDTC114EM SOT883 SC-101 DS PDTA114EM PDTC114ES SOT54 (TO-92) SC-43 TC114E PDTA114ES PDTC114ET SOT23 - *16(1) PDTA114ET PDTC114EU SOT323 SC-70 *09(1) PDTA114EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Aug 05 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k?, R2 = 10 k? SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND

3.7. pdtc114eu_4.pdf Size:58K _philips

3.8. pdtc114es_3.pdf Size:57K _philips

3.9. pdtc114ee_4.pdf Size:56K _philips

3.10. pdtc114eef_2.pdf Size:55K _philips

3.11. pdtc114et_7.pdf Size:56K _philips

3.12. dtc114ee.pdf Size:152K _rohm

viated symbol : 24 Abbreviated symbol : 24 2.9 1.1 2.0 0.9 DTC114EUA DTC114EKA 0.4 0.8 0.3 0.2 0.7 (3) (3) (2) (1) (2) (1) (1) GND (1) GND 0.65 0.65 0.95 0.95 (2) IN 0.15 (2) IN 0.15 1.3 (3) OUT 1.9 (3) OUT ROHM : UMT3 Each lead has same dimensions ROHM : SMT3 Each lead has same dimensions EIAJ : SC-70 EIAJ : SC-59 Abbreviated symbol : 24 Abbreviated symbol : 24 www.rohm.com 2011.12 - Rev.E 1/3 0c 2011 ROHM Co., Ltd. All rights reserved. 1.2 0.8 1.6 0.2 0.8 0

3.13. dtc114eub.pdf Size:82K _rohm

ing unit (pieces) 3000 GND DTC114EUB R1=R2=10k? Absolute maximum ratings (Ta=25�C) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10 to +40 V Collector current Ic(max)?1 100 mA Output current Io 50 mA Power dissipation PD?2 200 mW Junction temperature Tj 150 �C Range of storage temperature Tstg -55 to +150 �C ?1 Characteristics of built-in transistor ?2 Each terminal mounted on a recommended land 1/2 2.1 1.25 0.53 0.53 0.425 0.425 Transistors DT

3.14. dtc114ee-eua-eka-eca_24_sot416_323_346_23.pdf Size:71K _rohm

3.15. dtc114e-series.pdf Size:161K _rohm

0.5 0.2 0.2 (2) GND 0.15 (2) IN 0.8 0.5 0.5 (3) OUT (3) OUT 1.0 Each lead has same dimensions Each lead has same dimensions ROHM : VMT3 ROHM : EMT3 Abbreviated symbol : 24 Abbreviated symbol : 24 2.9 1.1 2.0 0.9 DTC114EUA DTC114EKA 0.4 0.8 0.3 0.2 0.7 (3) (3) (2) (1) (2) (1) (1) GND (1) GND 0.65 0.65 0.95 0.95 (2) IN 0.15 (2) IN 0.15 1.3 (3) OUT 1.9 (3) OUT ROHM : UMT3 Each lead has same dimensions ROHM : SMT3 Each lead has same dimensions EIAJ : SC-70 EIAJ : SC

3.16. dtc114eeb.pdf Size:82K _rohm

t (pieces) 3000 GND DTC114EEB R1=R2=10k? Absolute maximum ratings (Ta=25�C) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10 to +40 V ?1 Collector current Ic(max) 100 mA ?2 Output current Io 50 mA Power dissipation PD 150 mW Junction temperature Tj 150 �C Range of storage temperature Tstg -55 to +150 �C ?1 Characteristics of built-in transistor ?2 Each terminal mounted on a recommended land 1/2 1.6 0.37 0.86 0.37 0.45 0.45 Transistors DTC114E

3.17. ddtc114elp.pdf Size:167K _diodes

2 GND � Weight: 0.0009 grams (approximate) GND 2 Equivalent Inverter Circuit Schematic and Pin Configuration Component P/N R1(NOM) R2(NOM) DDTC114ELP 10K 10K Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V Output Current IO 50 mA Collector Current Ic(max) 100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @TA = 25�C PD 250 mW Power Dera

3.18. ddtc123eca_ddtc143eca_ddtc114eca_ddtc124eca_ddtc144eca_ddtc115eca.pdf Size:114K _diodes

� Weight: 0.008 grams (approximate) 3 C B 1 3 C R1 IN OUT P/N R1, R2 (NOM) Type Code B 2.2K? DDTC123ECA N04 R2 4.7K? DDTC143ECA N08 E DDTC114ECA 10K? N13 E 1 2 DDTC124ECA N17 22K? GND (0) DDTC144ECA N20 47K? IN GND(0) DDTC115ECA N24 100K? Schematic and Pin Configuration Equivalent Inverter Circuit Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage, (3) to (2) VCC 50 V Input Voltage, (1) to (2) DDTC123ECA -10 t

3.19. dtc114em3-series.pdf Size:127K _onsemi

in 4 mm, 8000 Unit Tape & Reel � These are Pb-Free Devices MAXIMUM RATINGS (TA = 25�C unless otherwise noted) 3 SOT-723 Rating Symbol Value Unit CASE 631AA Collector-Base Voltage VCBO 50 Vdc STYLE 1 2 1 Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses abov

3.20. dtc114eseria_8a-m_sot416.pdf Size:118K _onsemi

CASE 463 of damage to the die. SOT�416/SC�75 � Available in 8 mm, 7 inch/3000 Unit Tape & Reel STYLE 1 MAXIMUM RATINGS (TA = 25�C unless otherwise noted) Rating Symbol Value Unit PIN3 COLLECTOR Collector-Base Voltage VCBO 50 Vdc (OUTPUT) Collector-Emitter Voltage VCEO 50 Vdc R1 Collector Current IC 100 mAdc PIN1 R2 BASE DEVICE MARKING AND RESISTOR VALUES (INPUT) Device Marking R1 (K) R2 (K) Shipping PIN2 EMITTER DTC114EET1 8A 10 10 3000/Tape & Reel (GROUND) DTC124EET1 8B

3.21. dtc114exv3t1-series.pdf Size:97K _onsemi

MUM RATINGS (TA = 25�C unless otherwise noted) (GROUND) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc 3 Collector Current IC 100 mAdc 2 1 SC-89 CASE 463C STYLE 1 MARKING DIAGRAM 3 xx D 1 2 xx = Specific Device Code (See Marking Table on page 2) D = Date Code � Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: January, 2004 - Rev. 0 DTC114EXV3T1/D DTC114EXV3T1 Series DEVICE MARKING AND RESISTOR VA

3.22. dtc114eet1_8a-m_sot416.pdf Size:116K _onsemi

3.23. dtc114eet1-series.pdf Size:92K _onsemi

Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die � Pb-Free Packages are Available 3 MAXIMUM RATINGS (TA = 25�C unless otherwise noted) 2 1 Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc SC-75 (SOT-416) Collector-Emitter Voltage VCEO 50 Vdc CASE 463 STYLE 1 Collector Current IC 100 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Rating Symbol Value Unit Total Device Dissipation, PD FR-4 Board (Note 1) @ TA = 25�C 2

3.24. dtc114e.pdf Size:156K _lge

put voltage VIN -10~40 V IO 50 Output current mA IC(MAX) 100 Power dissipation Pd 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55~150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.5 VCC=5V ,IO=100ВµA Input voltage V VI(on) 3 VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 ВµA VCC=50V, VI=0 DC current gain GI 30 VO=5V ,IO=

3.25. dtc114esa.pdf Size:464K _wietron

on.com.tw DTC114ESA Electrical characteristic curves 100 10m VO=0.3V VCC=5V 5m 50 2m 20 Ta= C 100° 1m 25°C 10 500µ - C 40° Ta=- 40°C 5 200µ 25°C 100µ 100°C 2 50µ 1 20µ 500m 10µ 5µ 200m 2µ 100m 1µ 100µ 200µ 500µ1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage (ON characteristics) (OFF characteristics) 1

3.26. dtc114eua.pdf Size:754K _wietron

http://www.weitron.com.tw DTC114EUA Electrical characteristic curves 100 10m VO=0.3V VCC=5V 5m 50 2m 20 Ta= C 100° 1m 25°C 10 500µ - C 40° Ta=- 40°C 5 200µ 25°C 100µ 100°C 2 50µ 1 20µ 500m 10µ 5µ 200m 2µ 100m 1µ 100µ 200µ 500µ1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage (ON characteristics) (OFF cha

3.27. dtc114em.pdf Size:270K _wietron

.7 47 DTC124EM 8B 22 22 DTC124XM 8L 22 47 DTC144EM 47 47 8C 10 DTC114YM 8D 47 DTC123JM 8M 2.2 47 DTC115EM 8N 100 100 DTC114TM 94 10 ? 8F DTC144WM 8P 47 22 DTC143TM 4.7 ? ? DTC123EM 8H 2.2 2.2 DTC144TM 8T 47 W E I T R O N 1/10 11-Apr-07 h t t p : / / w w w . w e i t r o n . c o m . t w DTC114EM Series WEITRON Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(1) V V(BR)

3.28. dtc114eca.pdf Size:752K _wietron

/www.weitron.com.tw DTC114ECA Electrical characteristic curves 100 10m VO=0.3V VCC=5V 5m 50 2m 20 Ta= C 100° 1m 25°C 10 500µ - C 40° Ta=- 40°C 5 200µ 25°C 100µ 100°C 2 50µ 1 20µ 500m 10µ 5µ 200m 2µ 100m 1µ 100µ 200µ 500µ1m 2m 5m 10m 20m 50m 100m 0 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage (ON characteristics) (OFF characteri

3.29. dtc114ee.pdf Size:420K _wietron

24EE 8B 22 22 DTC143EE 8J 4.7 4.7 DTC144EE 47 47 DTC143ZE 8K 4.7 47 8C 10 DTC114YE 8D 47 DTC124XE 8L 22 47 10 DTC114TE 94 DTC123JE 8M 2.2 47 03 4.7 DTC143TE DTC115EE 8N 100 100 DTC144WE 8P 47 22 W E I T R O N 1/13 Rev.A 29-Jul-08 h t t p : / / w w w . w e i t r o n . c o m . t w 8 8 DTC114EE Series WEITRON Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(2) V V(BR)CEO

Anderen transistoren... DTB143EK , DTB143ES , DTC113ZKA , DTC113ZSA , DTC113ZUA , DTC114ECA , DTC114EEA , DTC114EK , BC108 , DTC114ESA , DTC114EUA , DTC114GKA , DTC114GSA , DTC114GUA , DTC114TCA , DTC114TEA , DTC114TKA .


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