DTC114YKA . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: DTC114YKA

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.2

Kollektor-Basis-Sperrspannung (Ucb): 50

Kollektor-Emitter-Sperrspannung (Uce): 0

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 140

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 68

Transistorgehäuse: SOT223

Ersatz (vergleichstyp) für DTC114YKA

DTC114YKA - PDF-Dokument zum Download bereitstellen...

1.1. dtc114yka.pdf Size:326K _htsemi

ltage VCC 50 V Input voltage VIN -6to+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100µA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V ,VI=0 DC curr

3.1. pdtc114yu_1.pdf Size:59K _motorola

collector/output LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - 40 V negative --6V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 °C; note 1 - 200 mW Tstg storage temperature -65

3.2. dtc114yerev1.pdf Size:144K _motorola

less otherwise noted) Rating Symbol Value Unit Output Voltage VO 50 Vdc Input Voltage VI 40 Vdc Output Current IO 100 mAdc DEVICE MARKING DTC114YE = 69 THERMAL CHARACTERISTICS Power Dissipation @ TA = 25°C(1) PD *125 mW Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C Junction Temperature TJ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) VI(off) — — 0.3 Vdc Input On Voltage (VO = 0.

3.3. pdtc114ye_3.pdf Size:56K _motorola

e Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative --6V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C Tamb operat

3.4. dtc114ye_69_ sot416.pdf Size:94K _motorola

less otherwise noted) Rating Symbol Value Unit Output Voltage VO 50 Vdc Input Voltage VI 40 Vdc Output Current IO 100 mAdc DEVICE MARKING DTC114YE = 69 THERMAL CHARACTERISTICS Power Dissipation @ TA = 25°C(1) PD *125 mW Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C Junction Temperature TJ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) VI(off) — — 0.3 Vdc Input On Voltage (VO = 0.

3.5. pdtc114yt_3.pdf Size:56K _motorola

ade in Malaysia. 1999 May 21 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative --6V IO output current (DC) - 100 mA ICM peak collector

3.6. pdtc114yu_1.pdf Size:59K _philips

collector/output LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - 40 V negative --6V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 °C; note 1 - 200 mW Tstg storage temperature -65

3.7. pdtc114y_series.pdf Size:174K _philips

TC114YK SOT346 SC-59 47 PDTA114YK PDTC114YM SOT883 SC-101 DU PDTA114YM PDTC114YS SOT54 (TO-92) SC-43 TC114Y PDTA114YS PDTC114YT SOT23 - *27(1) PDTA114YT PDTC114YU SOT323 SC-70 *30(1) PDTA114YU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Aug 17 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC114Y series R1 = 10 k?, R2 = 47 k? SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE A

3.8. pdtc114ye_3.pdf Size:56K _philips

e Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative --6V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C Tamb operat

3.9. pdtc114yt_3.pdf Size:56K _philips

ade in Malaysia. 1999 May 21 2 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative --6V IO output current (DC) - 100 mA ICM peak collector

3.10. dtc114y-series.pdf Size:140K _rohm

C114YUA DTC114YKA 2.0 0.9 0.4 0.8 0.3 0.2 0.7 (3) (3) (2) (1) ( ) ( ) 2 1 (1) GND (1) GND 0.65 0.65 0.95 0.95 (2) IN 0.15 ROHM : UMT3 (2) IN 0.15 ROHM : SMT3 1.3 (3) OUT EIAJ : SC-70 1.9 EIAJ : SC-59 (3) OUT Each lead has same dimensons Each lead has same dimensons Abbreviated symbol : 64 Abbreviated symbol : 64 ? Packaging specifications ? Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping OUT R1 Code T2L TL T106 T146 IN Basic orde

3.11. dtc114ye.pdf Size:140K _rohm

C114YUA DTC114YKA 2.0 0.9 0.4 0.8 0.3 0.2 0.7 (3) (3) (2) (1) ( ) ( ) 2 1 (1) GND (1) GND 0.65 0.65 0.95 0.95 (2) IN 0.15 ROHM : UMT3 (2) IN 0.15 ROHM : SMT3 1.3 (3) OUT EIAJ : SC-70 1.9 EIAJ : SC-59 (3) OUT Each lead has same dimensons Each lead has same dimensons Abbreviated symbol : 64 Abbreviated symbol : 64 ? Packaging specifications ? Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping OUT R1 Code T2L TL T106 T146 IN Basic orde

3.12. dtc114yeb.pdf Size:152K _rohm

k? R2=47k? DTC114YEB Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6 to +40 V ?1 Collector current Ic(max) 100 mA Output current Io 70 mA ?2 Power dissipation PD 150 mW Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C ?1 Characteristics of built-in transistor ?2 Each terminal mounted on a recommended land www.rohm.com 2009.07 - Rev.B 1/2 0c 2009 ROHM Co., Ltd. All rights reserved. 1

3.13. dtc114yub.pdf Size:82K _rohm

unit (pieces) 3000 GND DTC114YUB R1=10k? R2=47k? Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -6 to +40 V Collector current Ic(max)?1 100 mA Output current Io 70 mA Power dissipation PD?2 200 mW Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C ?1 Characteristics of built-in transistor ?2 Each terminal mounted on a recommended land 1/2 2.1 1.25 0.53 0.53 0.425 0.425 Transistors DT

3.14. dtc114ye-yua-yka_64_sot416_323_346.pdf Size:69K _rohm

3.15. dtc114ye.pdf Size:197K _mcc

Pd Power dissipation --- 150 --- mW 2. GND 1 2 3. OUT Tj Junction temperature --- 150 --- Tstg Storage temperature -55 --- 150 E Electrical Characteristics @ 25 Symbol Parameter Min Typ Max Unit VI(off) Input voltage (VCC=5V, IO=100 A) --- --- 0.3 V G H J VI(on) (VO=0.3V, IO=1mA) 1.4 --- --- V VO(on) Output voltage (IO/II=5mA/0.25mA) --- 0.1 0.3 V II Input current (VI=5V) --- --- 0.88 mA K IO(off) Output current (VCC=50V, VI=0) --- --- 0.5 A DIMENSIONS GI DC current gain

3.16. dtc114yua_sot-323.pdf Size:197K _mcc

ent 100 3: OUT Pd Power dissipation --- 200 --- mW 1 2 Tj Junction temperature --- 150 --- F E Tstg Storage temperature -55 --- 150 Electrical Characteristics @ 25 Symbol Parameter Min Typ Max Unit G H J VI(off) Input voltage (VCC=5V, IO=100 A) --- --- 0.3 V VI(on) (VO=0.3V, IO=1mA) 1.4 --- --- V K VO(on) Output voltage (IO/II=5mA/0.25mA) --- 0.1 0.3 V II Input current (VI=5V) --- --- 0.88 mA DIMENSIONS IO(off) Output current (VCC=50V, VI=0) --- --- 0.5 A INCHES MM GI DC

3.17. dtc114y.pdf Size:223K _secos

40 V IO 70 Output current mA IC(MAX) 100 Power dissipation PD 150 200 300 mW Junction & Storage temperature TJ, TSTG 150, -55~150 °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 06-Jan-2012 Rev.B Page 1 of 2 DTC114YE / DTC114YUA DTC114YCA / DTC114YSA NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Min. Typ. Max. Parameter Symbol Unit Test Conditi

3.18. dtc114yua.pdf Size:326K _htsemi

ltage VCC 50 V Input voltage VIN -6to+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100µA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V ,VI=0 DC curr

3.19. dtc114ysa.pdf Size:326K _htsemi

ltage VCC 50 V Input voltage VIN -6to+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100µA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V ,VI=0 DC curr

3.20. dtc114ye.pdf Size:326K _htsemi

ltage VCC 50 V Input voltage VIN -6to+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100µA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V ,VI=0 DC curr

3.21. dtc114yca.pdf Size:326K _htsemi

ltage VCC 50 V Input voltage VIN -6to+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100µA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V ,VI=0 DC curr

3.22. dtc114y.pdf Size:130K _lge

o+40 V IO 70 mA Output current IC(Max.) 100 mA Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ? Storage temperature Tstg -55 to+ 150 ? Electrical characteristics (Ta=25?) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) 0.3 VCC=5V ,IO=100ВµA Input voltage V VI(on) 1.4 VO=0.3V ,IO=1mA Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 ВµA VCC=50V ,VI=0 DC current gain GI 68 VO=5V ,IO=5mA In

Anderen transistoren... DTC114TSA , DTC114TUA , DTC114WCA , DTC114WEA , DTC114WKA , DTC114WUA , DTC114YCA , DTC114YEA , 2N5551 , DTC115ECA , DTC115EEA , DTC115EKA , DTC115ESA , DTC115EUA , DTC115GKA , DTC115GUA , DTC115TKA .