KSD5006 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KSD5006

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 120

Kollektor-Basis-Sperrspannung (Ucb): 1500

Kollektor-Emitter-Sperrspannung (Uce): 800

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 5

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 8

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für KSD5006

KSD5006 - PDF-Dokument zum Download bereitstellen...

5.1. ksd5041.pdf Size:68K _fairchild_semi

=3A, IB=0.1A 1 V fT Current Gain Bandwidth Product VCE=6V, IC=50mA 150 MHz Cob Output Capacitance VCB=20V, IE=0, f=1MHz 50 pF hFE Classification Classification P Q R hFE 180 ~ 270 230 ~ 380 340 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSD5041 Typical Characteristics 2.4 800 VCE= 2V 700 Ta = 25? 2.0 IB = 7mA 600 IB = 6mA 1.6 IB = 5mA 500 IB = 4mA 1.2 400 IB = 3mA 300 0.8 IB = 2mA 200 0.4 IB = 1mA 100 0.0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4

5.2. ksd5018.pdf Size:54K _samsung

er Saturation Voltage VBE(sat) IC = 2A, IB = 5mA 2 V KSD5018 NPN SILICON DARLINGTON TRANSISTOR  NPN EPITAXIAL SILICON KSD985/986 DARLINGTON TRANSISTOR

5.3. ksd5071pfc.pdf Size:24K _samsung

andwidth Product fT VCE = 10V, IC = 0.5A 3 MHz Damper Diode Turn On Voltage VF IF = 3.5A 2 V Fall Time tF IC = 3A, IB1 = 0.8A 0.4 uS IB2 = - 1.6A, VCC = 200V RL = 66.7 .  NPN TRIPLE DIFFUSED KSD5071 PLANAR SILICON TRANSISTOR  NPN TRIPLE DIFFUSED KSD5071 PLANAR SILICON TRANSISTOR

5.4. ksd5075pfc.pdf Size:24K _samsung

idth Product fT VCE = 10V, IC = 0.5A 3 MHz Fall Time tf IC = 3A, IB1 = 0.8A 0.4 uS IB2 = - 1.6A, RL = 66.7 T.U.T IN P U T C OUTPUT IB2 RL 20uS B VCC = 200V 100uF 470uF E V = -5V BB  NPN TRIPLE DIFFUSED KSD5075 PLANAR SILICON TRANSISTOR  NPN TRIPLE DIFFUSED KSD5075 PLANAR SILICON TRANSISTOR

5.5. ksd5057.pdf Size:132K _inchange_semiconductor

er Saturation Voltage IC= 5A; IBB= 1A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 5A; IBB= 1A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 3 VECF C-E Diode Forward Voltage IF= 6A 2.0 V Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 ?s tf 2 isc Website:www.isc

5.6. ksd5068.pdf Size:117K _inchange_semiconductor

1.2A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 IC= 6A , IB1= 1.2A ; IB2= -2.4A Fall Time 0.3 ?s tf RL= 33.3?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.7. ksd5059.pdf Size:128K _inchange_semiconductor

5A; IBB= 1A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 5A; IBB= 1A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 3 Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 ?s tf 2 isc Website:www.iscsemi.cn

5.8. ksd5066.pdf Size:117K _inchange_semiconductor

0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 3 MHz IC= 4A , IB1= 0.8A ; IB2= -1.6A Fall Time 0.4 ?s tf RL= 50?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.9. ksd5058.pdf Size:128K _inchange_semiconductor

4A; IBB= 0.8A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 4A; IBB= 0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 3 Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 ?s tf 2 isc Website:www.iscsemi.cn

5.10. ksd5018.pdf Size:129K _inchange_semiconductor

E= 330? 600 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= 0.05A;Clamped 275 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IBB= 5mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IBB= 20mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IBB= 5mA 2.0 V ICES Collector Cutoff Current VCE= 500V 1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 1000 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 200 is

5.11. ksd5017.pdf Size:124K _inchange_semiconductor

1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 3 MHz IC= 5A , IB1= 1A ; IB2= -2A Fall Time 0.4 ?s tf RL= 40?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.12. ksd5070.pdf Size:128K _inchange_semiconductor

ration Voltage IC= 2A; IBB= 0.6A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 2.5A 2.0 V IC= 2A , IB1= 0.6A ; IB2= -1.2A Fall Time 0.4 ?s tf RL= 100?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.13. ksd5062.pdf Size:121K _inchange_semiconductor

ation Voltage IC= 4A; IBB= 0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 5A 2.0 V IC= 4A , IB1= 0.8A ; IB2= -1.6A Fall Time 0.4 ?s tf RL= 50?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.14. ksd5060.pdf Size:121K _inchange_semiconductor

ration Voltage IC= 2A; IBB= 0.6A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 2.5A 2.0 V IC= 2A , IB1= 0.6A ; IB2= -1.2A Fall Time 0.4 ?s tf RL= 100?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.15. ksd5056.pdf Size:132K _inchange_semiconductor

er Saturation Voltage IC= 4A; IBB= 0.8A 5.0 V VCE(sat) Base-Emitter Saturation Voltage IC= 4A; IBB= 0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 3 VECF C-E Diode Forward Voltage IF= 5A 2.0 V Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 ?s tf 2 isc Website:www

5.16. ksd5065.pdf Size:116K _inchange_semiconductor

IB= 0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz IC= 3A , IB1= 0.8A ; IB2= -1.6A Fall Time 0.4 ?s tf RL= 66.7?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.17. ksd5061.pdf Size:120K _inchange_semiconductor

uration Voltage IC= 2.5A; IB= 0.8A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 3.5A 2.0 V IC= 3A , IB1= 0.8A ; IB2= -1.6A Fall Time 0.4 ?s tf RL= 66.7?; VCC= 200V 2 isc Website:www.iscsemi.cn

5.18. ksd5064.pdf Size:117K _inchange_semiconductor

= 0.6A 1.5 V VBE(sat) ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 ?A IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz IC= 2A , IB1= 0.6A ; IB2= -1.2A Fall Time 0.4 ?s tf RL= 100?; VCC= 200V 2 isc Website:www.iscsemi.cn

Anderen transistoren... KSD471A-O , KSD471A-Y , KSD5000 , KSD5001 , KSD5002 , KSD5003 , KSD5004 , KSD5005 , BC547 , KSD5007 , KSD5010 , KSD5011 , KSD5012 , KSD5013 , KSD5014 , KSD5015 , KSD5016 .