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KSD882
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: KSD882
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 10
Kollektor-Basis-Sperrspannung (Ucb): 40
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 3
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 90
Kollektor-Kapazität (Cc), pF: 45
Kurzschluss-Stromverstärkung (hfe): 60
Transistorgehäuse: TO126
Ersatz (vergleichstyp) für KSD882
KSD882
- PDF-Dokument zum Download bereitstellen...
1.1. ksd882.pdf  Size:131K _fairchild_semi  |
 | IC=5mA, IB=0 30 V
BVEBO Emitter-Base Breakdown Voltage IE=500uA, IC=0 5 V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 1 µA
IEBO Emitter Cut-off Current VEB = 3V, IC = 0 1 µA
hFE1 *DC Current Gain VCE = 2V, IC = 20mA 30 150
hFE2 VCE = 2V, IC = 1A 60 160 400
VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.5 V
VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 V
fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 90 MHz
Cob Output Cap |
5.1. ksd880.pdf Size:59K _fairchild_semi  |
 | V
fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 70 pF
tON Turn ON Time VCC = 30V, IC = 1A 0.8 µs
IB1 = - IB2 = 0.2A
tSTG Storage Time 1.5 µs
RL = 30?
tF Fall Time 0.8 µs
hFE Classification
Classification O Y G
hFE1 60 ~ 120 100 ~ 200 150 ~ 300
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD880
Typical Characteristics
4 1000
VCE = 5V
IB = 90mA
IB = 80mA
3 IB = 70mA
IB = 60mA
IB = 50m |
Anderen transistoren... KSD794A-Y
, KSD794-O
, KSD794-R
, KSD794-Y
, KSD880
, KSD880-G
, KSD880-O
, KSD880-Y
, BC517
, KSD882-G
, KSD882-O
, KSD882-R
, KSD882-Y
, KSD985
, KSD985-O
, KSD985-R
, KSD985-Y
.
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