KSH127 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: KSH127

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 20

Kollektor-Basis-Sperrspannung (Ucb): 100

Kollektor-Emitter-Sperrspannung (Uce): 100

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 8

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF: 300

Kurzschluss-Stromverstärkung (hfe): 10000

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für KSH127

KSH127 PDF doc:

1.1. ksh127.pdf Size:57K _fairchild_semi

KSH127 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP127 • Complement to KSH122 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25°C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V B VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 8 A ICP Collector Current (Pulse) - 16 A IB Base Current - 120 mA R1 R2 PC Collector Dissipation (TC=25°C) 20 W E R1 ? 8k? Collector Dissipation (Ta=25°C) 1.75 W R2 ? 0.12k? TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) *Collector-Emit

1.2. ksh127.pdf Size:24K _samsung

KSH127 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT D-PAK APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I. PACK, “ - I “ Suffix) 1 • Electrically Similar to Popular TIP122 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Unit I-PAK Collector Base Voltage VCBO - 100 V Collector Emitter Voltage VCEO - 100 V Emitter Base Voltage VEBO - 5 V Collector Current (DC) IC - 8 A Collector Current (Pulse) IC - 16 A 1 Base Current IB - 120 mA Collector Dissipation ( TC=25 ) PC 20 W Collector Dissipation (TA=25 ) PC 1.75 W 1. Base 2. Collector 3. Emitter Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit * Collector Emitter Sustaining Voltage VCEO (sus) IC = - 30mA, IB = 0 - 100 V Collector Cutoff Current ICEO VCE

5.1. ksh122.pdf Size:57K _fairchild_semi

KSH122 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP122 • Complement to KSH127 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V B VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current 120 mA R1 R2 PC Collector Dissipation (TC=25°C) 20 W E R1 ? 8k? Collector Dissipation (Ta=25°C) 1.75 W R2 ? 0.12k? TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units VCEO(sus) *Collector-Emitter Sustaini

5.2. ksh122.pdf Size:24K _samsung

KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT D-PAK APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I. PACK, “ - I “ Suffix) 1 • Electrically Similar to Popular TIP122 ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter Characteristic Symbol Rating Unit I-PAK Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 8 A Collector Current (Pulse) IC 16 A 1 Base Current IB 120 mA Collector Dissipation ( TC=25 ) PC 20 W Collector Dissipation (TA=25 ) PC 1.75 W 1. Base 2. Collector 3. Emitter Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Max Unit * Collector Emitter Sustaining Voltage VCEO (sus) IC = 30mA, IB = 0 100 V Collector Cutoff Current ICEO VCE = 50V, IB =0 10

Anderen transistoren... KSE802 , KSE803 , KSH112 , KSH112I , KSH117 , KSH117I , KSH122 , KSH122I , C103 , KSH127I , KSH13003 , KSH13003I , KSH200 , KSH200I , KSH210 , KSH210I , KSH29 .