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KSH31
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: KSH31
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 15
Kollektor-Basis-Sperrspannung (Ucb): 40
Kollektor-Emitter-Sperrspannung (Uce): 40
Emitter-Basis-Sperrspannung (Ueb): 5
Kollektorstrom (Ic): 3
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 3
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 10
Transistorgehäuse: TO252
Ersatz (vergleichstyp) für KSH31
KSH31
PDF doc:
1.1. ksh31_c.pdf  Size:55K _fairchild_semi  |
 | KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
D-PAK I-PAK
11
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: KSH31 40 V
: KSH31C 100 V
VCEO Collector-Emitter Voltage
: KSH31 40 V
: KSH31C 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 3 A
ICP Collector Current (Pulse) 5 A
IB Base Current 1 A
PC Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (Ta=25°C) 1.56 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: KSH31 IC = 30mA, IB = 0 40 V
: KSH31C 100 V
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1.2. ksh31.pdf Size:24K _samsung  |
 | KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
D-PAK
LOW SPEED SWITCHING APPLICATIONS
D-PACK FOR SURFACE MOUNT
APPLICATIONS
Load Formed for Surface Mount Application(No Suffix)
Straight Lead (I.ACK, “- I Suffix)
1
Electrically Similar to Popular TIP31 and TIP31C
1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
I-PAK
Collector Base Voltage : KSH31 VCBO 40 V
: KSH31C 100 V
Collector Emitter Voltage : KSH31 VCEO 40 V
: KSH31C 100 V
Emitter Base Voltage VEBO 5 V 1
Collector Current (DC) IC 3 A
Collector Current (Pulse) IC 1 A
1. Base 2. Collector 3. Emitter
Base Current IB 1 A
Collector Dissipation ( TC=25 ) PC 15 W
PC 1.56 W
Collector Dissipation (TA=25 )
Junction Temperature TJ 150
Storage Temperature TSTG -65 ~ 150
ELECTRICAL CHARACTERISTICS (Tc =25 )
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage : KSH31 VCEO (sus) IC = 30mA, IB = 0 40 V |
Anderen transistoren... KSH29CI
, KSH29I
, KSH30
, KSH3055
, KSH3055I
, KSH30C
, KSH30CI
, KSH30I
, TIP122
, KSH3177
, KSH3177I
, KSH31C
, KSH31CI
, KSH31I
, KSH32
, KSH32C
, KSH32CI
.
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