MJ900 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: MJ900

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 90

Kollektor-Basis-Sperrspannung (Ucb): 60

Kollektor-Emitter-Sperrspannung (Uce): 60

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 10

Höchste Sperrschichttemperatur (Tj), °C: 200

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 750

Transistorgehäuse: TO3

Ersatz (vergleichstyp) für MJ900

MJ900 - PDF-Dokument zum Download bereitstellen...

1.1. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

e MJ901 0.515 W/°C 25°C MJ1001 MJ900 MJ1000 TJ Junction Temperature MJ901 MJ1001 -65 to +200 °C MJ900 MJ1000 TS Storage Temperature MJ901 MJ1001 THERMAL CHARACTERISTICS Symbol Ratings Value Unit MJ900 MJ1000 RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W MJ901 MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Test Condition(s) Symbol Ratings Min Typ Mx Unit MJ900 60 - - MJ1000 Collector-Emitter IC=100 mAdc, IB=0 VCEO Vd

1.2. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

901 Derate above MJ1001 0.515 W/°C 25°C TJ Junction Temperature MJ900 MJ1000 -65 to +200 °C MJ901 MJ1001 TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit MJ900 MJ1000 RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W MJ901 MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Test Condition(s) Symbol Ratings Min Typ Mx Unit MJ900 60 - - MJ1000 Collector-Emitter IC=100 mAdc, IB=0 VCEO Vdc Breakdown Voltage (*) MJ901 80 - - MJ10

1.3. mj900.pdf Size:199K _inchange_semiconductor

isc Silicon PNP Darlington Power Transistor MJ900 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=-0.1A; IB= 0 -60 V Collector-Emitter Saturation Voltage IC=-3A; IB=-12mA -2.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-8A; IB=-40mA -4.0 V V CE(sat)-2 Base-Emitter On Voltage IC=-3A, VCE=-3V -2.5 V VBE(on) VCE=-60V; RBE=1k? -1.0 ICER Collector Cutoff Current m

Anderen transistoren... MJ8101 , MJ8400 , MJ8500 , MJ8501 , MJ8502 , MJ8503 , MJ8504 , MJ8505 , 2N4403 , MJ9000 , MJ901 , MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 , MJD117 .