MJD122 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: MJD122

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 20

Kollektor-Basis-Sperrspannung (Ucb): 100

Kollektor-Emitter-Sperrspannung (Uce): 100

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 8

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 4

Kollektor-Kapazität (Cc), pF: 200

Kurzschluss-Stromverstärkung (hfe): 6000

Transistorgehäuse: TO251

Ersatz (vergleichstyp) für MJD122

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1.1. mjd122re_mjd127.pdf Size:284K _motorola

RATINGS IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III IIII MJD122 III MJD127 Rating Symbol Unit IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III IIII III IIII III CASE 369A–13 Collector–Emitter Voltage VCEO 100 Vdc IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III IIII III IIII III Collector–Base V

1.2. mjd122_mjd127.pdf Size:93K _st

-65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/6 June 1997 MJD122 MJD127 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 6.25 C/W o Rthj- amb Thermal Resistance Junction-ambient Max 100 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 100 V 10 µA CBO CB Current (IE = 0) ICEO Collector Cut-off VCE = 50 V 10 µA Current (I = 0) B ICEX Collector

1.3. mjd122.pdf Size:163K _lge

VCE=50V,IE=0 ВµA 10 Emitter cut-off current IEBO VEB=5V,IC=0 mA 2 hFE(1) VCE=4V,IC=4A 1000 12000 DC current gain hFE(2) VCE=4V,IC=8A 100 VCE(sat)1 IC=4A,IB=16mA V 2 Collector-emitter saturation voltage VCE(sat)2 IC=8A,IB=80mA V 4 Base-emitter saturation voltage VBE(sat) IC=8A,IB=80mA V 4.5 Base-emitter voltage VBE VCE=4V,IC=4A V 2.8 Collector output capacitance Cob VCB=10V,IE=0,f=0.1MHz pF 200  MJD122(NPN) TO-251/TO-525-2L Transistor Typical Character

1.4. mjd122.pdf Size:664K _wietron

ent ICEO - - 10 µA VCE=50V Emitter Cutoff Current IEBO - - 2 mA VEB=5.0V ON CHARACTERISTICS DC Current Gain hFE(1) 1000 - 12000 VCE=4V, IC=4A - hFE(2) 100 - - VCE=4V, IC=8A Collector-Emitter Saturation Voltage 2.0 V IC=4A, IB=16mA VCE(sat) - - 4.0 IC=8A, IB=80mA Base-Emitter Saturation Voltage VBE(sat) - - 4.5 V IC =8A, IB=80mA Base-Emitter On Voltage V(on) - - 2.8 V VCE =4A, IC=4A Output Capacitance - 200 - pF Cob VCB=10V, IE=0, f=0.1MHz WEITRON 2/4 13-Apr

Anderen transistoren... MJ920 , MJ921 , MJD112 , MJD112-1 , MJD112T4 , MJD117 , MJD117-1 , MJD117T4 , 100DA025D , MJD122-1 , MJD122T4 , MJD127 , MJD127-1 , MJD127T4 , MJD13003 , MJD148 , MJD200 .