MJE13002 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

IIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII IIIIII IIIIII Rating Symbol MJE13002 MJE13003 Unit IIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIIIIIIIIIIIII IIIIII IIII IIIIII IIIIII IIII IIIIII IIIIII IIIIII IIIIII Collect

1.2. mje13002.pdf Size:120K _inchange_semiconductor

ж 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT Ўж /W

3.1. mje13009.pdf Size:451K _motorola

IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII Collector�Emitter Voltage VCEO(sus) IIIIIIII Vdc 400 IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIII

3.2. mje13005.pdf Size:311K _motorola

IIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII Collector�Emitter Voltage VCEO(sus) IIIIIIII Vdc 400 IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIII IIIIIII IIII IIIIIII IIII IIIIIIIIIIIIIIIIII IIII II

3.3. mje13007.pdf Size:337K _motorola

O 9.0 Vdc Collector Current � Continuous IC 8.0 Adc Collector Current � Peak (1) ICM 16 Base Current � Continuous IB 4.0 Adc Base Current � Peak (1) IBM 8.0 Emitter Current � Continuous IE 12 Adc Emitter Current � Peak (1) IEM 24 CASE 221A�06 RMS Isolation Voltage VISOL V TO�220AB (for 1 sec, R.H. < 30%, TA = 25�C) MJE13007 Test No. 1 Per Fig. 15 � 4500 Test No. 2 Per Fig. 16 � 3500 Test No. 3 Per Fig. 17 � 1500 Proper strike and creepage distance must be provided Total Device D

3.4. mje13009.pdf Size:78K _st

TERISTICS (T =25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = rated value 1 mA CEV CEV Current V = 1.5 V BE(off) V = rated value CEV V = 1.5 V EB(off) T = 100oC 5 mA cas e IEBO Emitter Cut-off VEB = 9 V 1 mA Current (IC = 0) VCEO(su s)? Collector-Emitter IC = 10 mA IE = 0 400 V Sustaining Voltage V ? Collector-Emitter I = 5 A I = 1 A 1 V CE(sat) C B Saturation Voltage I = 8 A I = 1.6 A 1.5 V C B I = 12 A I =

3.5. mje13007a.pdf Size:63K _st

-case Max 1.56 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off VCE = rated VCEV 1 mA Current (V = -1.5V) V = rated V T = 100 oC 5 mA BE CE CEV c IEBO Emitter Cut-off Current VEB = 9 V 1 mA (I = 0) C VCEO(sus)? Collector-Emitter IC = 10 mA 400 V Sustaining Voltage V ? Collector-Emitter I = 2 A I = 0.4 A 1 V CE(sat) C B Saturation Voltage IC = 5 A IB = 1 A 1.5 V IC = 8 A IB = 2 A 3

3.6. mje13005.pdf Size:60K _st

nt (VBE = -1.5V) VCE = 700V Tcase = 100oC 5 mA Emitter Cut-off I VEB = 9 V 1 mA EBO Current (IC = 0) Collector-Emitter VCEO(sus)? Sustaining Voltage IC = 10 mA 400 V (IB = 0) 0.5 I = 1 A I = 0.2 A C B Collector-Emitter V VCE(sat)? IC = 2 A IB = 0.5 A 0.6 Saturation Voltage V IC = 4 A IB = 1 A 1 Base-Emitter IC = 1 A IB = 0.2 A 1.2 V V ? BE(sat) 1.6 Saturation Voltage I = 2 A I = 0.5 A C B IC = 1 A VCE = 5 V 10 60 V hFE 30 DC Current Gain IC = 2 A VCE = 5 V 8 40 t I = 2 A

3.7. mje13007.pdf Size:29K _st

unction-case Max 1.56 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector Cut-off VCE = rated VCEV 1 mA o Current (V = -1.5V) V = rated V T = 100 C 5 mA BE CE CEV c IEBO Emitter Cut-off Current VEB = 9 V 1 mA (I = 0) C VCEO(sus )? Collector-Emitter IC = 10 mA 400 V Sustaining Voltage V ? Collector-Emitter I = 2 A I = 0.4 A 1 V CE(sat) C B Saturation Voltage IC = 5 A IB = 1 A 1.5 V IC = 8 A I

3.8. mje13004_mje13005.pdf Size:72K _central

5V (MJE13005) 1.0 mA ICEV VCE=700V, VBE(OFF)=1.5V, TC=100�C (MJE13005) 5.0 mA IEBO VEB=9.0V 1.0 mA BVCEO IC=10mA (MJE13004) 300 V BVCEO IC=10mA (MJE13005) 400 V VCE(SAT) IC=1.0A, IB=0.2A 0.5 V VCE(SAT) IC=2.0A, IB=0.5A 0.6 V VCE(SAT) IC=4.0A, IB=1.0A 1.0 V VCE(SAT) IC=2.0A, IB=0.5A, TC=100�C 1.0 V VBE(SAT) IC=1.0A, IB=0.2A 1.2 V VBE(SAT) IC=2.0A, IB=0.5A 1.6 V VBE(SAT) IC=2.0A, IB=0.5A, TC=100�C 1.5 V hFE VCE=5.0V, IC=1.0A 10 60 hFE VCE=5.0V, IC=2.0A 8.0 40 (SEE REVERSE SIDE) R0

3.9. mje13005.pdf Size:114K _central

E(SAT) IC=1.0A, IB=0.2A 0.5 V VCE(SAT) IC=2.0A, IB=0.5A 0.6 V VCE(SAT) IC=4.0A, IB=1.0A 1.0 V VBE(SAT) IC=1.0A, IB=0.2A 1.2 V VBE(SAT) IC=2.0A, IB=0.5A 1.6 V hFE VCE=5.0V, IC=1.0A 10 60 hFE VCE=5.0V, IC=2.0A 8.0 40 (Continued) R1 MJE13005 NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS fT VCE=10V, IC=500mA, f=1.0MHz 4.0 MHz Cob VCB=10V, IE=0, f=100kHz 130 pF Resistive Load td VCC=125V, IC=2.0A, IB1= IB2=0.4A 0.1 �s tr

3.10. mje13005g.pdf Size:150K _onsemi

c - Peak (Note 1) ICM 8 Base Current - Continuous IB 2 Adc - Peak (Note 1) IBM 4 MJE13005G Emitter Current - Continuous IE 6 Adc - Peak (Note 1) IEM 12 AY WW Total Device Dissipation @ TA = 25_C PD 2 W Derate above 25�C 0.016 W/_C Total Device Dissipation @ TC = 25_C PD 75 W Derate above 25�C 0.6 W/_C A = Assembly Location Operating and Storage Junction TJ, Tstg -65 to _C Temperature Range +150 Y = Year WW = Work Week THERMAL CHARACTERISTICS G = Pb-Free Package Characteristics

3.11. mje13003.pdf Size:107K _onsemi

IIII IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III III III 3 2 Collector Current - Continuous IC 1.5 Adc 1 IIIIIIIIIIII IIII III III - Peak (Note 1) ICM 3 IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III Base Current - Continuous IB 0.75 Adc - Peak (Note 1) IBM 1.5 IIIIIIIIIIII IIII III III MARKING DIAGRAM Emitter Current - Continuous IE 2.25 Adc IIIIIIIIIIII IIII IIIIIIIIIIII IIII III III III III - Peak (Note 1) IEM 4.5 IIIIIIIIIIII IIII III III IIIIIIIII

3.12. mje13007-d.pdf Size:194K _onsemi

ous IB 4.0 Adc - Peak (Note 1) IBM 8.0 Emitter Current - Continuous IE 12 Adc MARKING DIAGRAM - Peak (Note 1) IEM 24 Total Device Dissipation @ TC = 25_C PD 80 W Derate above 25�C 0.64 W/_C Operating and Storage Temperature TJ, Tstg -65 to 150 _C MJE13007G THERMAL CHARACTERISTICS AY WW Characteristics Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.56 _C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W A = Assembly Location Maximum Lead Temperature for Solderin

3.13. mje13009-d.pdf Size:189K _onsemi

inuous IC 12 Adc - Peak (Note 1) ICM 24 Base Current - Continuous IB 6 Adc - Peak (Note 1) IBM 12 MJE13009G Emitter Current - Continuous IE 18 Adc - Peak (Note 1) IEM 36 AY WW Total Device Dissipation @ TA = 25_C PD 2 W Derate above 25�C 0.016 W/_C Total Device Dissipation @ TC = 25_C PD 100 W Derate above 25�C 0.8 W/_C A = Assembly Location Operating and Storage Junction TJ, Tstg -65 to _C Y = Year Temperature Range +150 WW = Work Week THERMAL CHARACTERISTICS G = Pb-Free Packa

3.14. mje13003.pdf Size:53K _kec

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 10 ? A ICBO VCB=700V, IE=0 Collector Cut-off Current - - 10 ? A hFE(1) (Note) VCE=2V, IC=0.5A 9 - 38 DC Current Gain hFE(2) VCE=2V, IC=1A 5 - - IC=0.5A, IB=0.1A - - 0.5 Collector-Emitter VCE(sat) IC=1A, IB=0.25A - - 1 V Saturation Voltage IC=1.5A, IB=0.5A - - 3 IC=0.5A, IB=0.1A - - 1 Base-Emitter VBE(sat) V Saturation Voltage IC=1A, IB=0.25A - - 1.2 Cob VCB=10V

3.15. mje13004d.pdf Size:366K _kec

CONDITION MIN. TYP. MAX. UNIT ICEO VCE=400V Collector Cut-off Current - - 250 ? A ICES VCE=700V, VEB=0V Collector Cut-off Current - - 100 ? A IEBO VEB=9V Emitter Cut-off Current - - 100 ? A hFE (1) VCE=5V, IC=10mA 10 - - - hFE (2) VCE=5V, IC=1A DC Current Gain 20 - 40 - hFE (3) VCE=5V, IC=2A 8 - 40 - VCE(SAT) (1) IC=0.5A, IB=0.1A - - 0.7 V VCE(SAT) (2) IC=1A, IB=0.2A Collector-Emitter Saturation Voltage - - 1.0 V VCE(SAT) (3) IC=2.5A, IB=0.5A - - 1.5 V VBE(SAT) (1) IC=0.

3.16. mje13005d.pdf Size:51K _kec

ange Equivalent Circuit C TO-220AB B E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 10 A hFE(1) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 8 - - IC=1A, IB=0.2A - - 0.5 VCE(sat) IC=2A, IB=0.5A Collector-Emitter Saturation Voltage - - 0.6 V IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 VBE(sat) Base-Emitter Saturation Voltage V IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=

3.17. mje13007f.pdf Size:351K _kec

=8A, IB=2A - - 3 IC=2A, IB=0.4A - - 1.5 VBE(sat) Base-Emitter Saturation Voltage V IC=5A, IB=1A - - 1.6 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 110 - pF fT VCE=10V, IC=0.5A Transition Frequency 4 - - MHz OUTPUT ton Turn-On Time - - 1.6 ? S 300µS IB1 INPUT IB1 tstg Storage Time - - 3 ? S IB2 IB2 IB1=IB2 =1A tf Fall Time VCC =125V - - 0.7 ? S < DUTY CYCLE 2% = Note : hFE Classification R:15?27, O:23?39 2008. 3. 26 Revision No : 6 1/2 25? M

3.18. mje13005f.pdf Size:442K _kec

=2A, IB=0.5A - - 0.6 V Saturation Voltage IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 VBE(sat) Base-Emitter Saturation Voltage V IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 65 - pF fT VCE=10V, IC=0.5A Transition Frequency 4 - - MHz OUTPUT ton Turn-On Time - - 0.8 ? S 300µS IB1 INPUT IB1 tstg Storage Time - - 4 ? S IB2 IB2 IB1=IB2 =0.4A tf Fall Time VCC =125V - - 0.9 ? S < DUTY CYCLE 2% = Note : hFE Classification R:18?27,

3.19. mje13009.pdf Size:272K _kec

A - - 3 IC=5A, IB=1A - - 1.5 VBE(sat) Base-Emitter Saturation Voltage V IC=8A, IB=1.6A - - 1.6 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 180 - pF fT VCE=10V, IC=0.5A Transition Frequency 4 - - MHz OUTPUT ton Turn-On Time - - 1.1 S 300µS IB1 INPUT IB1 tstg Storage Time - - 3 S IB2 IB2 IB1=IB2 =1.6A tf Fall Time VCC =125V - - 0.7 S < DUTY CYCLE 2% = Note : hFE Classification O:14 28 2008. 3. 26 Revision No : 1 1/2 15? MJE13009 2008. 3. 26 Revi

3.20. mje13005df.pdf Size:375K _kec

Storage Temperature Range Equivalent Circuit C TO-220IS B E ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 10 ? A hFE(1) VCE=5V, IC=1A 18 - 35 DC Current Gain hFE(2) VCE=5V, IC=2A 8 - - IC=1A, IB=0.2A - - 0.5 VCE(sat) IC=2A, IB=0.5A Collector-Emitter Saturation Voltage - - 0.6 V IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 VBE(sat) Base-Emitter Saturation Voltage V IC=2A, IB=0.5A

3.21. mje13009f.pdf Size:280K _kec

3.22. mje13003hv.pdf Size:41K _kec

ST CONDITION MIN. TYP. MAX. UNIT IEBO VEB=9V, IC=0 Emitter Cut-off Current - - 10 A hFE(1) VCE=10V, IC=10 A 15 - 40 *hFE(2) VCE=10V, IC=0.4A DC Current Gain 20 - 40 hFE(3) VCE=10V, IC=1A 6 - - IC=0.5A, IB=0.1A - - 0.8 Collector-Emitter VCE(sat) V Saturation Voltage IC=1.5A, IB=0.5A - - 2.5 IC=0.5A, IB=0.1A - - 1 Base-Emitter VBE(sat) V Saturation Voltage IC=1A, IB=0.25A - - 1.2 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 21 - pF fT VCE=10V, IC=0.1A T

3.23. mje13005.pdf Size:436K _kec

aturation Voltage - - 0.6 V IC=4A, IB=1A - - 1 IC=1A, IB=0.2A - - 1.2 VBE(sat) Base-Emitter Saturation Voltage V IC=2A, IB=0.5A - - 1.6 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 65 - pF fT VCE=10V, IC=0.5A Transition Frequency 4 - - MHz OUTPUT ton Turn-On Time - - 0.8 S 300µS IB1 INPUT IB1 tstg Storage Time - - 4 S IB2 IB2 IB1=IB2 =0.4A tf Fall Time VCC =125V - - 0.9 S < DUTY CYCLE 2% = Note : hFE Classification R:18?27, O:23?35 2008. 3. 26 Rev

3.24. mje13007.pdf Size:339K _kec

IB=2A - - 3 IC=2A, IB=0.4A - - 1.5 VBE(sat) Base-Emitter Saturation Voltage V IC=5A, IB=1A - - 1.6 Cob VCB=10V, f=0.1MHz, IE=0 Collector Output Capacitance - 110 - pF fT VCE=10V, IC=0.5A Transition Frequency 4 - - MHz OUTPUT ton Turn-On Time - - 1.6 ? S 300µS IB1 INPUT IB1 tstg Storage Time - - 3 ? S IB2 IB2 IB1=IB2 =1A tf Fall Time VCC =125V - - 0.7 ? S < DUTY CYCLE 2% = Note : hFE Classification R:15?27, O:23?39 2008. 3. 26 Revision No : 1 1/2 25? MJE130

3.25. mje13003.pdf Size:169K _inchange_semiconductor

ture 1.4 40 150 -65~150 Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT Ўж /W

3.26. mje13004.pdf Size:120K _inchange_semiconductor

MBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT Ўж /W

3.27. mje13003d.pdf Size:128K _inchange_semiconductor

1A; IBB= 0.25A 0.5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.5A 0.6 V VCE(sat)-2 Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.2 V VBE(sat) ICBO Collector Cutoff Current VCB= 700V; IE= 0 100 ?A ICEO Collector Cutoff Current VCE= 400V; IB= 0 250 ?A hFE-1 DC Current Gain IC= 1mA ; VCE= 5V 7 hFE-2 DC Current Gain IC= 0.5A ; VCE= 5V 10 40 hFE-3 DC Current Gain IC= 2A ; VCE= 5V 5 VECF C-E Diode Forward Voltage IF= 2A 2.0 V Switching Times Storage

3.28. mje13009.pdf Size:157K _inchange_semiconductor

100 150 -65~150 Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT Ўж /W

3.29. mje13009f.pdf Size:143K _inchange_semiconductor

stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.5 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F ELECTRICAL CHARACTERISTICS TC =25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 400 V Collector-Emitter S

3.30. mje13005.pdf Size:154K _inchange_semiconductor

150 Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT Ўж /W

3.31. mje13003b.pdf Size:178K _wietron

5 ms) I 2 A p CM Base Current IB 0.5 A Base Peak Current (tp < 5 ms) IBM 1 A o Total Dissipation at Tamb = 25 C Ptot 1 W o Thermal Resistance Junction-ambient R?JA 120 C/W o Operating Junction Temperature Tj 150 C o Storage Temperature Tstg -65 to 150 C WEITRON 16-May-08 1/4 hpp://www.weitron.com.tw MJE13003B o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Parameter Symbol Min. Typ. Max. Unit Collector Cut-off VCE = 700 V ICEV 1 mA Current (V = -1.

Anderen transistoren... MJE1093 , MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , MJE1291 , 2N60 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 , MJE13009 .


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