MJW16212
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MJW16212
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 150
Kollektor-Basis-Sperrspannung (Ucb): 1500
Kollektor-Emitter-Sperrspannung (Uce): 650
Emitter-Basis-Sperrspannung (Ueb): 8
Kollektorstrom (Ic): 10
Höchste Sperrschichttemperatur (Tj), °C: 125
Transitfrequenz (ft): 2.5
Kollektor-Kapazität (Cc), pF: 350
Kurzschluss-Stromverstärkung (hfe): 4
Transistorgehäuse: TO247
Ersatz (vergleichstyp) für MJW16212
MJW16212
- PDF-Dokument zum Download bereitstellen...
1.1. mjw16212.pdf  Size:291K _motorola  |
 | ge Current — 250 µA Max at 1500 Volts — VCES
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
IIIIIIIIIIIIIIIIIIIIIII
8.0 Volts (Min)
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIII III
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIIIIIIIIIII IIIII
IIIII III
IIIII III
MAXIMUM RATINGS
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIIIIIIIIIII IIIII
IIIIIIIIIIIII IIIII
IIIII III
IIIII III
IIIII III
Rating Symbol Value Unit
IIIIIIIIIIIII IIIII
I |
4.1. mjw16206.pdf Size:342K _motorola  |
 | urrent
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 V (Min)
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIII III
MAXIMUM RATINGS
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIIIIIIIIIII IIIII
IIIII III
IIIII III
Rating Symbol Value Unit
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIII IIIII
IIIIIIIIIIIII IIIII
IIIII III
IIIII III
IIIIIIIIIIIII IIIII
IIIII III
Collector–Emitter Breakdown Voltage VCES IIIIIVdc
1200
IIIIIII |
4.2. mjw16206.pdf Size:119K _inchange_semiconductor  |
 | 0 -55~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 0.67 UNIT Ўж /W
|
Anderen transistoren... MJH6287
, MJW16010
, MJW16010A
, MJW16012
, MJW16018
, MJW16110
, MJW16206
, MJW16210
, AD149
, MM1008
, MM1139
, MM1151
, MM1152
, MM1153
, MM1154
, MM1161
, MM1162
.
|
