MMBT4888 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: MMBT4888

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 0.3

Kollektor-Basis-Sperrspannung (Ucb): 150

Kollektor-Emitter-Sperrspannung (Uce): 150

Emitter-Basis-Sperrspannung (Ueb): 6

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 125

Transitfrequenz (ft): 160

Kollektor-Kapazität (Cc), pF: 4

Kurzschluss-Stromverstärkung (hfe): 40

Transistorgehäuse: TO236

Ersatz (vergleichstyp) für MMBT4888

MMBT4888 - PDF-Dokument zum Download bereitstellen...

4.1. mmbt489lt1-d.pdf Size:121K _onsemi

2) M = Date Code* Total Device Dissipation (Single Pulse < 10 s) PDsingle 575 mW G = Pb-Free Package (Note: Microdot may be in either location) Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C *Date Code orientation and/or overbar may Stresses exceeding Maximum Ratings may damage the device. Maximum vary depending upon manufacturing location. Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure t

5.1. mmbt4403.pdf Size:301K _motorola

STICS Collector–Emitter Breakdown Voltage(3) V(BR)CEO Vdc (IC = –1.0 mAdc, IB = 0) –40 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = –0.1 mAdc, IE = 0) –40 — Emitter–Base Breakdown Voltage V(BR)EBO Vdc (IE = –0.1 mAdc, IC = 0) –5.0 — Base Cutoff Current IBEV µAdc (VCE = –35 Vdc, VEB = –0.4 Vdc) — –0.1 Collector Cutoff Current ICEX µAdc (VCE = –35 Vdc, VEB = –0.4 Vdc) — –0.1 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width

5.2. mmbt404a.pdf Size:95K _motorola

5°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO –35 — — Vdc (IC = –10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage V(BR)CBO –40 — — Vdc (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage V(BR)EBO –25 — — Vdc (IE = –10 µAdc, IC = 0) Collector Cutoff Current ICBO — — –100 nAdc (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current IEBO — — –100 nAdc (VEB = –10 Vdc, IC = 0) Thermal Clad is a trademark

5.3. mmbt4401.pdf Size:301K _motorola

S Collector–Emitter Breakdown Voltage(3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 40 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 0.1 mAdc, IE = 0) 60 — Emitter–Base Breakdown Voltage V(BR)EBO Vdc (IE = 0.1 mAdc, IC = 0) 6.0 — Base Cutoff Current IBEV µAdc (VCE = 35 Vdc, VEB = 0.4 Vdc) — 0.1 Collector Cutoff Current ICEX µAdc (VCE = 35 Vdc, VEB = 0.4 Vdc) — 0.1 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ? 300 µs, Duty C

5.4. mmbt4401k.pdf Size:162K _fairchild_semi

C = 150mA 100 300 VCE = 2V, IC = 500mA 40 VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA 0.4 V IC = 500mA, IB = 50mA 0.75 V VBE (sat) Base-Emitter Saturation Voltage * IC= 150mA, IB = 15mA 0.75 0.95 V IC = 500mA, IB = 50mA 1.2 V fT Current Gain Bandwidth Product IC = 20mA, VCE = 10V, f = 100MHz 250 MHz Cob Output Capacitance VCB=5V, IE=0, f=100KHz 6.5 pF tON Turn On Time VCC = 30V, VBE = 2V 35 ns IC = 150mA, IB1 = 15mA tOFF Turn Off Time VCC = 30V, IC = 150mA 25

5.5. 2n4401_mmbt4401.pdf Size:92K _fairchild_semi

e above 25°C 5.0 2.8 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R?JA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 2001 Fairchild Semiconductor Corporation 2N4401/MMBT4401, Rev A 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC

5.6. mmbt4355_pn4355.pdf Size:463K _fairchild_semi

5 *MMBT4355 PD Total Device Dissipation 625 350 mW 5.0 2.8 Derate above 25°C mW/°C Thermal Resistance, Junction to Case 83.3 R?JC °C/W Thermal Resistance, Junction to Ambient 200 357 R?JA °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 2001 Fairchild Semiconductor Corporation PN4355/MMBT4355, Rev A PN4355 / MMBT4355 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARA

5.7. mmbt4356.pdf Size:47K _fairchild_semi

Max. Units PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C R?JA Thermal Resistance, Junction to Ambient 357 °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 MMBT4356 Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -10mA, IB = 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -80 V V(BR)EBS Emitter

5.8. 2n4400_mmbt4400.pdf Size:67K _fairchild_semi

e above 25°C 5.0 2.8 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R?JA Thermal Resistance, Junction to Ambient 200 357 °C/W © 2001 Fairchild Semiconductor Corporation 2N4400/MMBT4400, Rev A 2N4400 / MMBT4400 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Br

5.9. 2n4126_mmbt4126.pdf Size:81K _fairchild_semi

5°C unless otherwise noted Symbol Characteristic Max Units 2N4126 *MMBT4126 PD Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R?JA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2N4126/MMBT4126, Rev A © 2001 Fairchild Semiconductor Corporation 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise

5.10. mmbt4354.pdf Size:47K _fairchild_semi

Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * IC = -1.0mA, IB = 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -50V, IE = 0 -50 nA IEBO Emitter Cut-off Current VEB = -5.0V, VCE = 0 -10 µA On Characteristics * hFE DC Current Gain VCE = -5V, IC = -0.1mA 25 VCE = -5V, IC = -1.0mA 40 VCE = -5V, IC = -10mA 50 500

5.11. mmbt4403k.pdf Size:166K _fairchild_semi

IC = -10mA 100 VCE = -2V, IC = -150mA * 100 300 VCE = -2V, IC = -500mA * 20 VCE (sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA -0.4 V IC = -500mA, IB = -50mA -0.75 V VBE (sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA -0.75 -0.95 V IC = -500mA, IB = -50mA -1.3 V fT Current Gain Bandwidth Product IC = -20mA, VCE = -10V, f = 100MHz 200 MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 140KHz 8.5 pF tON Turn On Time VCC = -30V, VBE = -2V 35 ns IC =

5.12. 2n4124_mmbt4124.pdf Size:95K _fairchild_semi

Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R?JA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 2001 Fairchild Semiconductor Corporation 2N4124/MMBT4124, Rev A 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CE

5.13. 2n4403_mmbt4403.pdf Size:69K _fairchild_semi

8 Derate above 25°C mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W ?JC Thermal Resistance, Junction to Ambient 200 357 R?JA °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 1.

5.14. mmbt4401t.pdf Size:176K _diodes

imum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current – Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) 833 °C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout

5.15. mmbt4403.pdf Size:131K _diodes

rmation: See Page 4 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) 417 °C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Devi

5.16. mmbt4403t.pdf Size:172K _diodes

8° ? B E All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current – Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) 833 °C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB,

5.17. mmbt4401.pdf Size:85K _diodes

Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) 417 °C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes

5.18. mmbt4126.pdf Size:112K _diodes

° 8° • Weight: 0.008 grams (approximate) All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) 417 °C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electr

5.19. mmbt4124.pdf Size:73K _diodes

Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous (Note 1) IC 200 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) 417 °C/W R?JA Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collec

5.20. mmbt4401.pdf Size:184K _mcc

or Cutoff Current 0.1 µAdc (VCE=35Vdc, VBE=0.4Vdc) K ON CHARACTERISTICS DIMENSIONS hFE DC Current Gain* INCHES MM (IC=0.1mAdc, VCE=1.0Vdc) 20 DIM MIN MAX MIN MAX NOTE (IC=1.0mAdc, VCE=1.0Vdc) 40 A .110 .120 2.80 3.04 B .083 .098 2.10 2.64 (IC=10mAdc, VCE=1.0Vdc) 80 C .047 .055 1.20 1.40 (IC=150mAdc, VCE=1.0Vdc) 100 300 D .035 .041 .89 1.03 (IC=500mAdc, VCE=1.0Vdc) 40 E .070 .081 1.78 2.05 VCE(sat) Collector-Emitter Saturation Voltage F .018 .024 .45 .60 G .0005 .0039 .01

5.21. mmbt4403_sot-23.pdf Size:200K _mcc

or Cutoff Current 0.1 µAdc K (VCE=30Vdc, VBE=3.0Vdc) DIMENSIONS ON CHARACTERISTICS INCHES MM hFE DC Current Gain* DIM MIN MAX MIN MAX NOTE (IC=0.1mAdc, VCE=1.0Vdc) 30 A .110 .120 2.80 3.04 (IC=1.0mAdc, VCE=1.0Vdc) 60 B .083 .098 2.10 2.64 C .047 .055 1.20 1.40 (IC=10mAdc, VCE=1.0Vdc) 100 D .035 .041 .89 1.03 (IC=150mAdc, VCE=2.0Vdc) 100 300 E .070 .081 1.78 2.05 (IC=500mAdc, VCE=2.0Vdc) 20 F .018 .024 .45 .60 VCE(sat) Collector-Emitter Saturation Voltage G .0005 .0039

5.22. mmbt4403wt1.pdf Size:178K _onsemi

tresses above the 2T = Specific Device Code Recommended Operating Conditions may affect device reliability. M = Date Code G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT4403WT1G SC--70 3000 / (Pb--Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packag

5.23. mmbt4401lt1.pdf Size:155K _onsemi

eeding Maximum Ratings may damage the device. Maximum G = Pb-Free Package Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location) Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Date Code orientation and/or overbar may *Transient pulses must not cause the junction temperature to be exceeded. vary depending upon manufacturing location.

5.24. mmbt4403m3-d.pdf Size:125K _onsemi

otal Device Dissipation PD 640 mW Alumina Substrate, (Note 2) TA = 25°C 5.1 mW/°C Derate above 25°C ORDERING INFORMATION Thermal Resistance, RqJA 195 °C/W Device Package Shipping† Junction-to-Ambient MMBT4403M3T5G SOT-723 8000/Tape & Reel Junction and Storage Temperature TJ, Tstg -55 to °C (Pb-Free) +150 Stresses exceeding Maximum Ratings may damage the device. Maximum †For information on tape and reel specifications, Ratings are stress ratings only. Functional operation above the R

5.25. mmbt4126lt1.pdf Size:154K _onsemi

+150 °C C3 = Device Code Stresses exceeding Maximum Ratings may damage the device. Maximum M = Date Code* Ratings are stress ratings only. Functional operation above the Recommended G = Pb-Free Package Operating Conditions is not implied. Extended exposure to stresses above the (Note: Microdot may be in either location) Recommended Operating Conditions may affect device reliability. *Date Code orientation and/or overbar may 1. FR-5 = 1.0 0.75 0.062 in. vary depending upon manufacturin

5.26. mmbt4124lt1.pdf Size:144K _onsemi

eration above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. ZC = Device Code 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† 3000 / Tape & R

5.27. mmbt4403lt1.pdf Size:151K _onsemi

-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum (Note: Microdot may be in either location) Ratings are stress ratings only. Functional operation above the Recommended *Date Code orientation and/or overbar may Operating Conditions is not implied. Extended exposure to stresses above the vary depending upon manufacturing location. Recommended Operating Conditions may affect device reliability. *Transient pulses must not cause the junction temperature to be ex

5.28. mmbt4401wt1.pdf Size:180K _onsemi

resses above the 1 Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT4401WT1G SC--70 3000/Tape & Reel (Pb--Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ? Semiconductor Compon

5.29. mmbt4401m3.pdf Size:125K _onsemi

evice Dissipation PD 640 mW Alumina Substrate, (Note 2) TA = 25°C 5.1 mW/°C Derate above 25°C ORDERING INFORMATION Thermal Resistance, RqJA 195 °C/W Device Package Shipping† Junction-to-Ambient MMBT4401M3T5G SOT-723 8000/Tape & Reel Junction and Storage Temperature TJ, Tstg -55 to °C (Pb-Free) +150 Stresses exceeding Maximum Ratings may damage the device. Maximum †For information on tape and reel specifications, Ratings are stress ratings only. Functional operation above the Recomme

5.30. mmbt4403.pdf Size:422K _secos

-40 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A DC current gain hFE VCE=-2 V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150 mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA 200 MHz Transition frequency f T

5.31. mmbt4403w.pdf Size:295K _secos

ture TJ, Tstg –55 to +150 °C DEVICE MARKING MMBT4403W = K3T, 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V(BR)CEO Vdc (IC = –1.0 mAdc, IB = 0) –40 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = –0.1 mAdc, IE = 0) –40 — Emitter–Base Breakdown Voltage V(BR)EBO Vdc (IE = –0.1 mAdc, IC = 0) –5.0 — Base Cutoff Current IBEV µAdc (VCE = –3

5.32. mmbt4401w.pdf Size:298K _secos

–55 to +150 °C DEVICE MARKING MMBT4401W = K3X, 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 40 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 0.1 mAdc, IE = 0) 60 — Emitter–Base Breakdown Voltage V(BR)EBO Vdc (IE = 0.1 mAdc, IC = 0) 6.0 — Base Cutoff Current IBEV µAdc (VCE = 35 Vdc, VEB = 0.4 Vdc) — 0.1 Col

5.33. mmbt493.pdf Size:512K _secos

20 - V IC=100?A, IE=0 Collector-emitter Breakdown Voltage V(BR)CEO* 100 - V IC=10mA, IB=0 Emitter-base Breakdown Voltage V(BR)EBO 5 - V IE=100?A, IC=0 Collector Cut-off Current ICBO - 0.1 ?A VCB=100V, IE=0 Collector Cut-off Current ICES - 0.1 ?A VCE=100V, IE=0 Emitter Cut-off Current IEBO - 0.1 ?A VEB=4V, IC=0 hFE(1)* 100 - VCE=10V, IC=1mA hFE(2) * 100 300 VCE=10V, IC=250mA DC Current Gain hFE(3) * 60 - VCE=10V, IC=500mA hFE(4) * 20 - VCE=10V, IC=1000mA VCE(sat) * - 0.3 V I

5.34. mmbt4401.pdf Size:951K _secos

ion to Ambient 417 R?JA C/W o Junction and Storage Temperature T Tstg -55 to +150 J , C DEVICE MARKING MMBT4401 = 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) Vdc V(BR)CEO (IC = 1.0 mAdc, IB = 0) 40 — Collector–Base Breakdown Voltage Vdc V(BR)CBO (IC = 0.1 mAdc, IE = 0) 60 — Emitter–Base Breakdown Voltage Vdc V(BR)EBO (IE = 0.1 mAdc, IC = 0) 6.0 — Bas

5.35. mmbt491.pdf Size:115K _secos

n voltage V(BR)CEO1 60 - V IC=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - V IE=100?A,IC=0 Collector cut-off current ICBO - 0.1 ?A VCB=60V, IE=0 Emitter cut-off current IEBO - 0.1 ?A VEB=4V, IC=0 hFE(1) 100 - VCE=5V,IC=1mA hFE(2)1 100 300 VCE=5V,IC=500mA DC current gain hFE(3)1 80 - VCE=5V,IC=1A hFE(4)1 30 - VCE=5V,IC=2A VCE(sat)11 - 0.25 V IC=500mA, IB=50mA Collector-emitter saturation voltage VCE(sat)21 - 0.5 V IC=1A, IB=100mA VBE(sat)1 - 1.1 V IC=1A, IB=100mA

5.36. mmbt4403.pdf Size:375K _htsemi

Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA 200 MHz Transition frequency f T f = 100MHz 1 JinYu www.htsemi.com semiconductor Date:2011/05  MMBT4403 2 JinYu www.htsemi.com semiconductor Date:2011/05  MMBT4403 3 JinYu www.htsemi.com semiconductor Date:2011/05

5.37. mmbt4401.pdf Size:1094K _htsemi

DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V VCE= 10V, IC= 20mA 250 MHz Transition frequency f T f = 100MHz 1 JinYu www.htsemi.com semiconductor Date:2011/05  MMBT4401 2 JinYu www.htsemi.com semiconductor Date:2011/05

5.38. mmbt4403.pdf Size:334K _gsme

?? DEVICE MARKING GM4403=2T GM4403=2T GM4403=2T ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4403 ELECTRICAL CHARACTERISTICS ¦ELECTRICAL CHARACTERISTICS ??? ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted ) (TA=25 unless otherwise noted ) (TA=25? unless otherwise noted ??????,??? 25?) OFF CHARACTERISTICS ¦OFF CHARACTERISTICS ????? OFF CHARACTERISTICS Character

5.39. mmbt4401.pdf Size:316K _gsme

DEVICE MARKING GM4401=2X GM4401=2X GM4401=2X ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4401 ELECTRICAL CHARACTERISTICS ¦ELECTRICAL CHARACTERISTICS ??? ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted ) (TA=25 unless otherwise noted ) (TA=25? unless otherwise noted ??????,??? 25?) OFF CHARACTERISTICS ¦OFF CHARACTERISTICS ????? OFF CHARACTERISTICS Characteristi

5.40. mmbt4403.pdf Size:222K _lge

rent gain hFE VCE=-2V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150mA, IB=-15mA -0.95 V VCE= -10V, IC= -20mA 200 MHz Transition frequency f T f = 100MHz  MMBT4403 SOT-23 Transistor(NPN) Typical Characteristics  MMBT4403 SOT-23 Transistor(NPN)

5.41. mmbt4401.pdf Size:195K _lge

ter cut-off current IEBO VEB=5V, IC=0 0.1 ?A DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V VCE= 10V, IC= 20mA 250 MHz Transition frequency f T f = 100MHz  MMBT4401 SOT-23 Transistor(NPN) Typical Characteristics

5.42. mmbt4403.pdf Size:502K _wietron

0.1mAdc, IE=0) V(BR)CBO Vdc - Vdc Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0) V(BR)EBO -5.0 IBEV - -0.1 uAdc Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc) Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc) - -0.1 uAdc ICEX 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. < < 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%. = = WEITRON http://www.weitron.com.tw MMBT4403 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued

5.43. mmbt4401.pdf Size:520K _wietron

dc, IE=0) V(BR)CBO Vdc - Vdc Emitter-Base Breakdown Voltage (IE=0.1mAdc, IC=0) V(BR)EBO 6.0 IBEV - 0.1 uAdc Base Cutoff Current (VCE=35 Vdc, VEB =0.4 Vdc) Collector Cutoff Current (VCE=35Vdc, VEB=0.4Vdc) - 0.1 uAdc ICEX 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. < < 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%. = = WEITRON http://www.weitron.com.tw MMBT4401 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Symbol Ma

Anderen transistoren... MMBT4275 , MMBT4354 , MMBT4355 , MMBT4356 , MMBT4401 , MMBT4401LT1 , MMBT4403 , MMBT4403LT1 , 2N2907 , MMBT4889 , MMBT4890 , MMBT4916 , MMBT4917 , MMBT4964 , MMBT4965 , MMBT5088 , MMBT5089 .