MMBTA92 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

ise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage(3) V(BR)CEO Vdc (IC = �1.0 mAdc, IB = 0) MMBTA92 �300 � MMBTA93 �200 � Collector�Base Breakdown Voltage V(BR)CBO Vdc (IC = �100 mAdc, IE = 0) MMBTA92 �300 � MMBTA93 �200 � Emitter�Base Breakdown Voltage V(BR)EBO �5.0 � Vdc (IE = �100 mAdc, IC = 0) Collector Cutoff Current ICBO �Adc (VCB = �200 Vdc, IE = 0) MMBTA92 � �0.25 (VCB = �160 Vdc, IE = 0) MMBTA93 � �0.25 Emitter Cutoff Curr

1.2. mmbta92_1.pdf Size:49K _philips

llector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --100 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 250 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Apr 11 2 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE

1.3. mmbta92.pdf Size:50K _philips

. MAX. UNIT VCBO collector-base voltage open emitter --300 V VCEO collector-emitter voltage open base --300 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --100 mA Ptot total power dissipation Tamb ? 25 �C; note 1 - 250 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C Note 1. Transistor mounted on an FR4 printed-circuit b

1.4. mmbta92.pdf Size:95K _st

25�C 350 mW Tstg Storage temperature -65 to 150 �C TJ Max. operating junction temperature 150 �C Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb Thermal resistance junction-ambient (1)__max 357.1 �C/W 1. Device mounted on PCB area of 1 cm2. 2/8 MMBTA92 Electrical characteristics 2 Electrical characteristics (Tcase = 25�C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Collector cut-off current ICB

1.5. mpsa92_mmbta92_pzta92.pdf Size:881K _fairchild_semi

teristic Max Units MPSA92 *MMBTA92 **PZTA92 PD Total Device Dissipation 625 350 1,000 mW Derate above 25 C 5.0 2.8 8.0 mW/ C � � R?JC Thermal Resistance, Junction to Case 83.3 C/W � R?JA Thermal Resistance, Junction to Ambient 200 357 125 C/W � *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. � 1997 Fairchild Semiconductor Corporation MPSA92 / MMBTA92 / PZTA92 PNP High Voltage Ampli

1.6. mmbta92_2.pdf Size:104K _diodes

ee Page 3 ? 0� 8� � Ordering Information: See Page 3 B E All Dimensions in mm � Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5.0 V Collector Current (Note 1) (Note 3) IC -500 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) R?JA 417 �C/W Operating and Stora

1.7. smbta92-mmbta92.pdf Size:68K _infineon

MMBTA92 Electrical Characteristics at TA = 25�C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 300 - - V Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - IC = 100 �A, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 100 �A, IC = 0 Collector-base cutoff current ICBO �A VCB = 200 V, IE = 0 - - 0.1 VCB = 200 V, IE = 0 , TA = 150 �C - - 20 - - 100 nA Emitter-base cu

1.8. mmbta92_sot-23.pdf Size:233K _mcc

(VEB=-5Vdc, IC=0) K ON CHARACTERISTICS DIMENSIONS hFE DC Current Gain* INCHES MM (IC=-1.0mAdc, VCE=-10Vdc) 60 DIM MIN MAX MIN MAX NOTE (IC=-10mAdc, VCE=-10Vdc) 100 200 A .110 .120 2.80 3.04 (IC=-30mAdc, VCE=-10Vdc) 60 B .083 .098 2.10 2.64 VCE(sat) Collector-Emitter Saturation Voltage C .047 .055 1.20 1.40 D .035 .041 .89 1.03 (IC=-20mAdc, IB=-2.0mAdc) -0.2 Vdc E .070 .081 1.78 2.05 VBE(sat) Base-Emitter Saturation Voltage F .018 .024 .45 .60 G .0005 .0039 .013 .100 (IC=-20mAdc

1.9. mmbta92lt1_mmbta93lt1.pdf Size:105K _onsemi

5�C 2.4 mW/�C vary depending upon manufacturing location. Thermal Resistance, Junction to Ambient RqJA 417 �C/W Junction and Storage Temperature TJ, Tstg -55 to �C +150 ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Device Package Shipping� Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MMBTA92LT1G SOT-23 3000 / Tape & Reel Recommended Opera

1.10. mmbta92.pdf Size:21K _utc

rwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100�A,IE=0 UTC MMBTA92 -300 V Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0 UTC MMBTA92 -300 V Emitter-Base Breakdown Voltage BVEBO IE=-100�A,Ic=0 -5 V Collector Cut-Off Current ICBO UTC MMBTA92 VCB=-200V,IE=0 -0.25 �A Emitter Cut-Off Current IEBO VEB=-3V,Ic=0 -0.10 �A DC Current Gain(note) hFE VCE=-10V,Ic=-1mA 60 VCE=-10V,Ic=-10mA 80 VCE=-10V,Ic=-30mA 80 Collector-

1.11. mmbta92w.pdf Size:121K _secos

02 Rev. A Page 2 of 2 FE h , DC CURRENT GAIN C, CAPACITANCE (pF) T f , CURRENT-GAIN BANDWIDTH (MHz) V, VOLTAGE (VOLTS)

1.12. mmbta92.pdf Size:318K _secos

1 ?A EBO EB C H FE(1) V = -10V, I =- 1mA 60 CE C DC current gain H FE(2) V = -10V, I =-10mA 100 200 CE C H FE(3) V =-10V, I =-30mA 60 CE C Collector-emitter saturation voltage V (sat) I =-20 mA, I = -2mA -0.2 V CE C B Base-emitter saturation voltage V (sat) I = -20 mA, I =-2mA -0.9 V BE C B V =-20V, I =-10mA CE C Transition frequency f 50 MHz T f=30MHz DEVICE MARKING DEVICE MARKING MMBTA92=2D http://www.SeCoSGmbH.com Any changing of specification will not be informed ind

1.13. mmbta92_mmbta93.pdf Size:167K _kec

BOL TEST CONDITION MIN. TYP. MAX. UNIT MMBTA92 -300 - - Collector-Base V(BR)CBO IC=-100 A, IE=0 V Breakdown Voltage MMBTA93 -200 - - MMBTA92 -300 - - Collector-Emitter V(BE)CEO IC=-1.0mA, IB=0 V Breakdown Voltage MMBTA93 -200 - - IC=-1.0mA, VCE=-10V 25 - - * hFE IC=-10mA, VCE=-10V DC Current Gain 40 - - IC=-30mA, VCE=-10V 25 - - * VCE(sat) IC=-20mA, IB=-2.0mA Collector-Emitter Saturation Voltage - - -0.5 V * VBE(sat) IC=-20mA, IB=-2.0mA Base-Emitter Saturation Voltage

1.14. mmbta92.pdf Size:1598K _htsemi

in hFE(2) VCE= -10V, IC=-10mA 100 200 hFE(3) VCE= -10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V VCE=-20V, IC= -10mA 50 MHz Transition frequency f T f=30MHz 1 JinYu www.htsemi.com semiconductor Date:2011/05 MMBTA92 2 JinYu www.htsemi.com semiconductor Date:2011/05

1.15. mmbta92.pdf Size:296K _gsme

¦DEVICE MARKING ?? DEVICE MARKING GMA92=2D;GMA93=2E GMA92=2D;GMA93=2E GMA92=2D;GMA93=2E ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 ELECTRICAL CHARACTERISTICS ¦ELECTRICAL CHARACTERISTICS ??? ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted ) (TA=25 unless otherwise noted ) (TA=25? unless otherwise noted ??????,??? 25?) Characteristic Symbol Min Max Un

1.16. mmbta92.pdf Size:259K _lge

hFE(1) VCE= -10V, IC= -1mA 60 DC current gain hFE(2) VCE= -10V, IC=-10mA 100 200 hFE(3) VCE= -10V, IC=-30mA 60 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V VCE=-20V, IC= -10mA 50 MHz Transition frequency f T f=30MHz MMBTA92 SOT-23 Transistor(PNP)

1.17. mmbta92.pdf Size:247K _wietron

B reakdown Voltage(3 ) (I =-1 . 0 m Adc. IB =0 ) V(B R )CE O -3 0 0 - C Vdc -3 0 0 - Collector-B as e B reakdown Voltage (I =-1 0 0 Adc, I =0 ) V(B R )CB O Vdc C E - Vdc E mitter-B as e B reakdown Voltage (I =-1 0 Adc, I =0 ) V(B R )E B O -5 . 0 E C I - -0 . 2 5 Adc Collect Cutoff Current (V = -2 0 0 Vdc, I =0 ) C B O C B E E m itte Cutoff Current (V =3 V, I =0 ) - -0 . 1 Adc E B C I E B O 1 . FR -5 =1 . 0 x 0 . 7 5 x 0 . 0 6 2 in. 2 . Alum ina=0 . 4 x 0 . 3 x 0 . 0 2 4 in. 9 9

Anderen transistoren... MMBTA56 , MMBTA56LT1 , MMBTA63 , MMBTA63LT1 , MMBTA64 , MMBTA64LT1 , MMBTA70 , MMBTA70LT1 , BD135 , MMBTA92LT1 , MMBTA93 , MMBTA93LT1 , MMBTH10 , MMBTH24 , MMBTH81 , MMBTH81LT1 , MMCM2221 .


	(C) 2005 All Right reserved	Bipolare \| \| MOSFET \| \| IGBT \| \| Hersteller Websites \| \| SMD-Codes \| \| Transistorgehäuse \| \| Contact alltransistors[@]gmail.com