MPQ3904 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: MPQ3904

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.31

Kollektor-Basis-Sperrspannung (Ucb): 60

Kollektor-Emitter-Sperrspannung (Uce): 40

Emitter-Basis-Sperrspannung (Ueb): 6

Kollektorstrom (Ic): 0.2

Höchste Sperrschichttemperatur (Tj), °C: 135

Transitfrequenz (ft): 250

Kollektor-Kapazität (Cc), pF: 4

Kurzschluss-Stromverstärkung (hfe): 50

Transistorgehäuse: TO116

Ersatz (vergleichstyp) für MPQ3904

MPQ3904 - PDF-Dokument zum Download bereitstellen...

1.1. ffb3904_fmb3904_mmpq3904.pdf Size:98K _fairchild_semi

bove which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB3904 FMB3904 MMPQ3904 PD Total

1.2. mmpq3904-d.pdf Size:41K _diodes

Voltage V(BR)EBO 6.0 — — Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO — — 50 nAdc (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current IEBO — — 50 nAdc (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2001 – Rev. 2 MMPQ3904/D MMPQ3904 ELECTRICAL CHARACTERISTICS (TA = 2

4.1. ffb3906_fmb3906_mmpq3906.pdf Size:84K _fairchild_semi

f any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB3906 FMB3906 MMPQ3906 PD Total Device Dissipation 300 700 1,0

4.2. mpq3906.pdf Size:45K _central

4.3. mmpq3906.pdf Size:145K _onsemi

eferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: August, 2006 - Rev. 4 MMPQ3906/D MMPQ3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO -40 - - Vdc (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage V(BR)CBO -40 - - Vdc (IC = -10 mAdc, IE = 0)

Anderen transistoren... MPQ3691 , MPQ3692 , MPQ3693 , MPQ3694 , MPQ3742 , MPQ3743 , MPQ3903 , MPQ3903R , AD162 , MPQ3904R , MPQ3905 , MPQ3905R , MPQ3906 , MPQ3906R , MPQ3962 , MPQ4121 , MPQ4122 .