MPSA42 >> Datenblatt. Höchstzulässige Werte. Charakteristische Werte

eakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MPSA42 300 � MPSA43 200 � Collector�Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) MPSA42 300 � MPSA43 200 � Emitter�Base Breakdown Voltage V(BR)EBO 6.0 � Vdc (IE = 100 mAdc, IC = 0) Collector Cutoff Current ICBO �Adc (VCB = 200 Vdc, IE = 0) MPSA42 � 0.1 (VCB = 160 Vdc, IE = 0) MPSA43 � 0.1 Emitter Cutoff Current IEBO �Adc (VEB = 6.0 Vdc, IC = 0) MPSA42 � 0.1 (VEB = 4.0 Vdc, IC = 0) MPSA43 � 0.1 1. Pulse Test: Pul

1.2. mpsa42_mpsa43_2.pdf Size:104K _philips

2 - 300 V MPSA43 - 200 V VCEO collector-emitter voltage open base MPSA42 - 300 V MPSA43 - 200 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ? 25 �C - 500 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb ambient temperature -65 +150 �C 2004 Oct 11 2 NXP Semiconductors Product data sheet NPN high-voltage transistors

1.3. mpsa42_mpsa43_4.pdf Size:47K _philips

lector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ? 25 �C - 500 mW Tstg storage temperature -65 +150 �C Tj junction temperature - 150 �C Tamb operating ambient temperature -65 +150 �C 1999 Apr 12 2 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note

1.4. mpsa42.pdf Size:121K _fairchild_semi

MBTA42 **PZTA42 PD Total Device Dissipation 625 350 1,000 mW Derate above 25�C 5.0 2.8 8.0 mW/�C R Thermal Resistance, Junction to Case 83.3 �C/W ?JC R?JA Thermal Resistance, Junction to Ambient 200 357 125 �C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. � 1997 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier (continued) Electrical Charac

1.5. mpsa42_mmbta42_pzta42.pdf Size:128K _fairchild_semi

e noted Max Symbol Parameter Units MPSA42 *MMBTA42 **PZTA42 PD Total Device Dissipation 625 240 1000 mW Derate above 25�C 5.0 1.92 8.0 mW/�C R?JC Thermal Resistance, Junction to Case 83.3 �C/W R?JA Thermal Resistance, Junction to Ambient 200 515 125 �C/W * Device mounted on FR-4PCB 1.6� ? 1.6� ? 0.06�. ** Device mounted on FR-4 PCB 36 mm ? 18 mm ? 1.5 mm; mounting pad for the collector lead min. 6 cm2. � 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA42 / MMBTA42 /

1.6. mpsa42_mpsa43npn.pdf Size:43K _central

1.7. mpsa42_mpsa43_to-92.pdf Size:233K _mcc

tion to DIMENSIONS o R JA 200 C/W Ambient Air INCHES MM DIM MIN MAX MIN MAX NOTE Thermal Resistance, Junction to A .170 .190 4.33 4.83 o R 83.3 JC C/W B .170 .190 4.30 4.83 Case C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 o E .130 .160 3.30 3.96 Operating & Storage Temperature Tj, TSTG -55~150 C G .096 .104 2.44 2.64 www.mccsemi.com 1 of 4 Revision: A 2011/01/01 MCC MPSA42 thru MPSA43 TM Micro Commercial Components ELECTRICAL CHARACTERISTICS (TA = 25�C unless oth

1.8. mpsa42_mpsa43.pdf Size:102K _onsemi

gs may damage the device. Maximum Y = Year Ratings are stress ratings only. Functional operation above the Recommended WW = Work Week Operating Conditions is not implied. Extended exposure to stresses above the G = Pb-Free Package Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional info

1.9. mpsa42_mpsa43.pdf Size:17K _utc

UTC MPSA42 300 V UTC MPSA43 200 Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 UTC MPSA42 300 V UTC MPSA43 200 Emitter-Base Breakdown Voltage BVEBO IE=100�A,Ic=0 6 V Collector Cut-Off Current ICBO UTC MPSA42 VCB=200V,IE=0 100 nA UTC MPSA43 VCB=160V,IE=0 100 Emitter Cut-Off Current IEBO UTC MPSA42 VBE=6V,Ic=0 100 nA UTC MPSA43 VBE=4V,Ic=0 100 1 UTC UNISONIC TECHNOLOGIES CO., LTD. UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNI

1.10. mpsa42.pdf Size:112K _secos

Collector to Base Breakdown Voltage V(BR)CBO 300 - - V IC=100?A, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 300 - - V IC=1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100?A, IC = 0A Collector Cut-Off Current ICBO - - 0.25 ?A VCB=200 V, IE = 0 A Emitter Cut-Off Current IEBO - - 0.1 ?A VEB=5 V, IC =0 mA hFE(1) 60 - - VCE=10V, IC=1mA DC Current Gain hFE(2) 80 - 250 VCE=10V, IC=10mA hFE(3) 75 - - VCE=10V, IC=30mA Collector to Emitter Saturation Vo

1.11. mpsa42_mpsa43.pdf Size:233K _kec

BR)CEO IC=1.0mA, IB=0 V Breakdown Voltage MPSA43 200 - - VCB=200V, IE=0 MPSA42 - - 0.1 Collector Cut-off ICBO A Current VCB=160V, IE=0 MPSA43 - - 0.1 VEB=6V, IC=0 MPSA42 - - 0.1 Emitter Cut-off IEBO A Current VEB=4V, IC=0 MPSA43 - - 0.1 IC=1.0mA, VCE=10V 40 - - * hFE IC=10mA, VCE=10V DC Current Gain 40 - - IC=30mA, VCE=10V 40 - - * VCE(sat) IC=20mA, IB=2.0mA Collector-Emitter Saturation Voltage - - 0.5 V * VBE(sat) IC=20mA, IB=2.0mA Base-Emitter Saturation Voltage -

1.12. mpsa42.pdf Size:155K _wietron

IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=10V, IC=1mA 60 DC current gain hFE(2) VCE=10V, IC=10mA 80 250 hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V Transition frequency fT VCE=20V, IC=10mA,f=30MHZ 50 MHz CLASSIFICATION OF hFE(2) Rank A B1 B2 C Range 80-100 100-150 150-200 200-250 WEITRON http://www.weitron.com.tw MPSA42 WEITRON http://www.weitron.com.tw MPSA42 TO-92

Anderen transistoren... MPSA17 , MPSA18 , MPSA20 , MPSA25 , MPSA26 , MPSA27 , MPSA28 , MPSA29 , SS8050 , MPSA43 , MPSA44 , MPSA45 , MPSA55 , MPSA56 , MPSA62 , MPSA63 , MPSA64 .


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