2N485
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: 2N485
Werkstoff: Ge
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.15
Kollektor-Basis-Sperrspannung (Ucb): 12
Kollektor-Emitter-Sperrspannung (Uce): 0
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.01
Höchste Sperrschichttemperatur (Tj), °C: 85
Transitfrequenz (ft): 3.5
Kollektor-Kapazität (Cc), pF: 24
Kurzschluss-Stromverstärkung (hfe): 50
Transistorgehäuse: TO5
Ersatz (vergleichstyp) für 2N485
2N485
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1.1. 2n4856-59_2n4860-61.pdf  Size:278K _motorola 1.2. 2n4856a_2n4857a_2n4858a.pdf Size:51K _vishay  |
 | 26AA (TO-92) and SOT-23 packages, see the
J/SST111 series data sheet. For similar duals, see the
2N5564/5565/5566 data sheet.
TO-206AA
(TO-18)
S
1
23
D G and Case
Top View
Document Number: 70243
www.vishay.com
S-04028—Rev. D, 04-Jun-01
7-1
2N4856A/4857A/4858A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage : (2N4856A-58A) . . . . . . . . . . . . . . . –40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 200_C
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1.3. 2n4856a_2n4857a_2n4858a_2n4859a_2n4860a_2n4861a.pdf Size:82K _central 1.4. 2n4854u.pdf Size:241K _optek  |
 | . . . . . . . . . -65o C to +200o C
J
Storage Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Description stg
Power Dissipation @ T = 25o C (both transistors driven equally) . . . . . . . . . . . 0.6 W
A
The JANTX2N4854U is a hermetically
Power Dissipation @ T = 25o C (both transistors driven equally) . . . . . . . . . 2.0 W(1)
C
sealed, ceramic surface mount,
Soldering Temperature (vapor phase reflow for 30 sec.) . . . . . . . . . . . . . . |
1.5. 2n3838_2n4854.pdf Size:135K _microsemi  |
 | istor) 3.43 mW/0C (both transistors)
6 Lead Flatpack*
4) For TC > +250C Derate linearly 4.0 mW/0C (one transistor) 8.0 mW/0C (both transistors)
2N3838
5) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors)
*See MILPRF19500/421
for package dimensions.
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
V(BR)CEO 40 Dc
IC = 10 mAdc
C |
Anderen transistoren... 2N479A
, 2N48
, 2N480
, 2N480A
, 2N481
, 2N482
, 2N483
, 2N484
, 2N5088
, 2N4854
, 2N4855
, 2N486
, 2N4862
, 2N4863
, 2N4864
, 2N4865
, 2N4866
.
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