| |
MPSW05
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MPSW05
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 1
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 60
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.25
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 50
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 80
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für MPSW05
MPSW05
- PDF-Dokument zum Download bereitstellen...
1.1. mpsw05_mpsw06.pdf  Size:138K _motorola  |
 | own Voltage(1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) MPSW05 60 —
MPSW06 80 —
Emitter–Base Breakdown Voltage V(BR)EBO 4.0 — Vdc
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICES µAdc
(VCE = 40 Vdc, IB = 0) MPSW05 — 0.5
(VCE = 60 Vdc, IB = 0) MPSW06 — 0.5
Collector Cutoff Current ICBO µAdc
(VCB = 40 Vdc, IE = 0) MPSW05 — 0.1
(VCB = 60 Vdc, IE = 0) MPSW06 — 0.1
Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Pre |
1.2. mpsw05_mpsw06.pdf Size:96K _onsemi  |
 | aximum
Ratings are stress ratings only. Functional operation above the Recommended
x = 5 or 6
Operating Conditions is not implied. Extended exposure to stresses above the
A = Assembly Location
Recommended Operating Conditions may affect device reliability.
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
MPSW05G TO-92 5000 Units/Bulk
(Pb-Free)
MPSW06G TO-92 5000 Units/Bulk
(Pb-Free)
MPSW06RLRA TO- |
5.1. mpsw01rev0d.pdf Size:89K _motorola  |
 | STICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) MPSW01 30 —
MPSW01A 40 —
Collector–Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 µAdc, IE = 0) MPSW01 40 —
MPSW01A 50 —
Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current ICBO µAdc
(VCB = 30 Vdc, IE = 0) MPSW01 — 0.1
(VCB = 40 Vdc, IE = 0) MPSW01A — 0.1
Emitter Cutoff Current IEBO — 0.1 µAdc
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms, Dut |
5.2. mpsw06.pdf Size:23K _fairchild_semi  |
 | otal Device Dissipation 1.0 W
° °
Derate above 25 C 8.0 mW/ C
R Thermal Resistance, Junction to Case 125 °
C/W
?JC
R Thermal Resistance, Junction to Ambient 50 °C/W
?JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
MPSW06
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parame |
5.3. mpsw01.pdf Size:138K _fairchild_semi  |
 | C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6cm2
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
MPSW01 Rev. A
MPSW01 NPN General Purpose Amplifier
Electrical Characteristics (Note) Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition MIN MAX Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 40 V
|
5.4. mpsw01-a.pdf Size:95K _onsemi  |
 | ings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
MPS
Recommended Operating Conditions may affect device reliability.
W01x
AYWWG
G
x = 01A Devices
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data shee |
Anderen transistoren... MPSU52
, MPSU55
, MPSU56
, MPSU57
, MPSU60
, MPSU95
, MPSW01
, MPSW01A
, BD140
, MPSW06
, MPSW07
, MPSW10
, MPSW13
, MPSW14
, MPSW42
, MPSW43
, MPSW45
.
|
