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MPSW51A
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MPSW51A
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 1
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 40
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 60
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 60
Transistorgehäuse: TO92
Ersatz (vergleichstyp) für MPSW51A
MPSW51A
PDF doc:
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SEMICONDUCTOR TECHNICAL DATA
by MPSW51/D
One Watt High Current Transistors
PNP Silicon MPSW51
COLLECTOR
3
MPSW51A*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage MPSW51 VCEO –30 Vdc 1
2
MPSW51A –40
3
Collector–Base Voltage MPSW51 VCBO –40 Vdc
CASE 29–05, STYLE 1
MPSW51A –50
TO–92 (TO–226AE)
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –1000 mAdc
Total Device Dissipation @ TA = 25°C PD 1.0 Watts
Derate above 25°C 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C 20 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 125 °C/W
Thermal Resistance, Junction to Case RqJC 50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTER |
4.2. mpsw51-a.pdf Size:96K _onsemi  |
 | MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features http://onsemi.com
• Pb-Free Packages are Available*
COLLECTOR
3
2
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc
1
MPSW51 -30
EMITTER
MPSW51A -40
Collector-Base Voltage VCBO Vdc
MPSW51 -40
MPSW51A -50
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -1000 mAdc
Total Device Dissipation @ TA = 25°C PD 1.0 mW
Derate above 25°C 8.0 mW/°C
TO-92 1 WATT
(TO-226)
Total Device Dissipation @ TC = 25°C PD 2.5 W
CASE 29-10
1
Derate above 25°C 20 mW/°C
1
2
2
STYLE 1
3
3
Operating and Storage Junction TJ, Tstg -55 to +150 °C
STRAIGHT LEAD BENT LEAD
Temperature Range
BULK PACK TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W
Thermal Resistance, Junction-to-Case RqJC 50 °C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maxim |
5.1. mpsw55_mpsw56.pdf Size:141K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by MPSW55/D
One Watt Amplifier Transistors
MPSW55
PNP Silicon
*
MPSW56
COLLECTOR
*Motorola Preferred Device
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol MPSW55 MPSW56 Unit
CASE 29–05, STYLE 1
Collector–Emitter Voltage VCEO –60 –80 Vdc
TO–92 (TO–226AE)
Collector–Base Voltage VCBO –60 –80 Vdc
Emitter–Base Voltage VEBO –4.0 Vdc
Collector Current — Continuous IC –500 mAdc
Total Device Dissipation @ TA = 25°C PD 1.0 Watt
Derate above 25°C 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 Watts
Derate above 25°C 20 mW/°C
Operating and Storage Junction TJ, Tstg –55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 125 °C/W
Thermal Resistance, Junction to Case RqJC 50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter |
5.2. mpsw56.pdf Size:44K _fairchild_semi  |
 | MPSW56
TO-226
C
B
E
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 4.0 V
IC Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
TJ, T °C
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSW56
PD Total Device Dissipation 1.0 W
8.0
Derate above 2 |
5.3. mpsw55_mpsw56.pdf Size:97K _onsemi  |
 | MPSW55, MPSW56
One Watt Amplifier
Transistors
PNP Silicon
http://onsemi.com
Features
• Pb-Free Packages are Available*
COLLECTOR
3
2
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
1
EMITTER
Collector-Emitter Voltage MPSW55 VCEO -60 Vdc
MPSW56 -80
Collector-Base Voltage MPSW55 VCBO -60 Vdc
MPSW56 -80
Emitter-Base Voltage VEBO -4.0 Vdc
Collector Current - Continuous IC -500 mAdc
TO-92 1 WATT
(TO-226)
Total Device Dissipation @ TA = 25°C PD 1.0 W
CASE 29-10
1
Derate above 25°C 8.0 mW/°C 1
2
2
STYLE 1
3
3
Total Device Dissipation @ TC = 25°C PD 2.5 W
STRAIGHT LEAD BENT LEAD
Derate above 25°C 20 mW/°C
BULK PACK TAPE & REEL
AMMO PACK
Operating and Storage Junction TJ, Tstg -55 to +150 °C
Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
MPS
Characteristic Symbol Max Unit
W5x
AYWW G
Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W
G
Thermal Resistance, Junction-to-Case RqJC 50 °C/W
Stresses exceeding Maximum Ratings may damage the de |
Anderen transistoren... MPSW10
, MPSW13
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, MPSW43
, MPSW45
, MPSW45A
, MPSW51
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