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MRF641
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MRF641
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 50
Kollektor-Basis-Sperrspannung (Ucb): 36
Kollektor-Emitter-Sperrspannung (Uce): 0
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 3
Höchste Sperrschichttemperatur (Tj), °C: 175
Transitfrequenz (ft):
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 0
Transistorgehäuse: TO128
Ersatz (vergleichstyp) für MRF641
MRF641
- PDF-Dokument zum Download bereitstellen...
1.1. mrf641re.pdf  Size:103K _motorola  |
 | tal Device Dissipation @ TC = 25°C PD 43.7 Watts
Derate above 25°C 0.25 W/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R?JC 4.0 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO 16 — — Vdc
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage V(BR)CES 36 — — Vdc
(I |
1.2. mrf6414p.pdf Size:70K _motorola  |
 | :
NOTCH
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
4 5 6
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
–B–
A 0.965 0.985 24.52 25.01
B 0.390 0.410 9.91 10.41
C 0.250 0.290 6.35 7.36
D 0.075 0.090 1.91 2.28
E 0.095 0.115 2.42 2.92
1 2 3
F 0.110 0.130 2.80 3.30
Q 2 PL
K 2 PL
H 0.155 0.175 3.94 4.44
D 4 PL J 0.004 0.006 0.11 0.15
M M M
0.13 (0.005) T A B
K 0.090 0.116 2.29 2.94
F 2 PL L 0.725 BSC 18.41 BSC
N 0.415 0.435 10.55 11.04
Q 0.1 |
1.3. mrf6414r.pdf Size:108K _motorola  |
 | Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R?JC 1.3 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 28 — — Vdc
Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4 — — Vdc
Collector–Emit |
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