PN3564 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PN3564

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.31

Kollektor-Basis-Sperrspannung (Ucb): 30

Kollektor-Emitter-Sperrspannung (Uce): 15

Emitter-Basis-Sperrspannung (Ueb): 6

Kollektorstrom (Ic): 0.1

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 400

Kollektor-Kapazität (Cc), pF: 3.5

Kurzschluss-Stromverstärkung (hfe): 20

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für PN3564

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5.1. pn3565.pdf Size:293K _fairchild_semi

PN3565 PD Total Device Dissipation 625 mW Derate above 25 C 5.0 mW/ C ° ° R Thermal Resistance, Junction to Case 83.3 °C/W ?JC R?JA Thermal Resistance, Junction to Ambient 200 °C/W © 1997 Fairchild Semiconductor Corporation PN3565 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 2.0 mA, IB = 0 25 V V(BR)CBO Col

5.2. pn3566.pdf Size:26K _fairchild_semi

E = 10V, IC = 2.0mA 80 VCE = 10V, IC = 10mA 150 600 VCE(sat) Collector-Emitter Saturation Voltage * IC = 100mA, IB = 10mA 1.0 V VBE(on) Base-Emitter On Voltage VCE = 1V, IC = 100mA 0.9 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0 25 pF * Pulse Test: Pulse Width ? 300ms, Duty Cycle ? 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation 625 mW Derate above 25°C 5 mW/°C R?JA Thermal Resistance, Jun

5.3. pn3569.pdf Size:26K _fairchild_semi

5.4. pn3567.pdf Size:26K _fairchild_semi

acteristics hFE DC Current Gain VCE = 1V, IC = 150mA 40 120 VCE = 1V, IC = 30mA 40 VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA 0.25 V VBE(on) Base-Emitter On Voltage VCE = 1V, IC = 150mA 1.1 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0 20 pF Cibo Input Capacitance VEB = 0.5V, IC = 0 80 * Pulse Test: Pulse Width ? 300ms, Duty Cycle ? 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 PN3567 Thermal Characteristic

5.5. pn3563.pdf Size:528K _fairchild_semi

350 mW Derate above 25 C 2.8 mW/ C ° ° R?JC Thermal Resistance, Junction to Case 125 C/W ° R?JA Thermal Resistance, Junction to Ambient 357 C/W ° © 1997 Fairchild Semiconductor Corporation PN3563 NPN RF Amplifier (continued) Electrical Characteristics TA= 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V VCEO(sus) V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE =

5.6. pn3568.pdf Size:27K _fairchild_semi

Units PN3568 PD Total Device Dissipation 625 mW Derate above 25 C 5.0 mW/ C ° ° R Thermal Resistance, Junction to Case 83.3 °C/W ?JC R?JA Thermal Resistance, Junction to Ambient 200 °C/W © 1997 Fairchild Semiconductor Corporation PN3568 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 060V V Collec

5.7. 2n3567_2n3568_2n3569_pn3567_pn3568_pn3569.pdf Size:64K _central

5.8. pn3569.pdf Size:75K _microelectronics

Anderen transistoren... PN3403 , PN3404 , PN3405 , PN3414 , PN3415 , PN3416 , PN3417 , PN3563 , BC547 , PN3565 , PN3566 , PN3567 , PN3568 , PN3569 , PN3638 , PN3638A , PN3639 .