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SK3040
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: SK3040
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 1
Kollektor-Basis-Sperrspannung (Ucb): 200
Kollektor-Emitter-Sperrspannung (Uce): 200
Emitter-Basis-Sperrspannung (Ueb): 6
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 200
Transitfrequenz (ft): 75
Kollektor-Kapazität (Cc), pF: 55
Kurzschluss-Stromverstärkung (hfe): 55
Transistorgehäuse: TO5
Ersatz (vergleichstyp) für SK3040
SK3040
PDF doc:
5.1. 2sk304.pdf  Size:79K _sanyo  |
 | Ordering number:EN850E
N-Channel Junction Silicon FET
2SK304
Low-Frequency Amplifier Applications
Features Package Dimensions
· Ideal for potentiometers, analog switches, low
unit:mm
frequency amplifiers, and constant-current regula-
2034A
tors.
[2SK304]
2.2
4.0
0.4
0.5
0.4
0.4
1 2 3
1 : Source
1.3 1.3
2 : Gate
3 : Drain
3.0
SANYO : SPA
3.8nom
Specifications
Absolute Maximum Ratings at Ta = 25?C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Drain Voltage VGDS –30 V
Gate Current IG 10 mA
Drain Current ID 20 mA
Allowable Power Dissipation PD 150 mW
?C
Junction Temperature Tj 125
?C
Storage Temperature Tstg –40 to +125
Electrical Characteristics at Ta = 25?C
Ratings
Parameter Symbol Conditions Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA –30 V
Gate-to-Source Leakage Current IGSS VGS=–20V –1.0 nA
Zero-Gate Voltage Drain Current IDSS* VDS=10V, VGS=0 0.6* 12.0* mA
Cutoff Voltage VGS(off) V |
5.2. 3sk304.pdf Size:25K _panasonic  |
 | High Frequency FETs 3SK285
3SK304(Tentative), 3SK308(Tentative)
Silicon N-Channel MOS
+0.2
3SK304 2.8 –0.3 Unit : mm
For UHF amplification +0.2
0.65± 0.15 1.5 –0.3 0.65± 0.15
0.5R
Features
4 1
Though low voltage operation, performance is equivalent to the con-
ventional product.
3 2
Downsizing of sets by mini or S-mini type package, and automatic
insertion by taping/magazine packing are available.
1 : Source
2 : Drain
0.4± 0.2
3 : Gate 1
4 : Gate 2
Absolute Maximum Ratings (Ta = 25?C)
Mini Type Package (4-pin)
Parameter Symbol Rating Unit 3SK308 Unit : mm
Drain-Source voltage VDS 15 V
2.1± 0.1
Gate 1-Source voltage VG1S ±8 V
0.425 1.25± 0.1 0.425
Gate 2-Source voltage VG2S ±8 V
32
Drain current IDS 30 mA
Allowable power dissipation PD 150 mW
Channel temperature Tch 150 ?C
41
Storage temperature Tstg – 55 to +150 ?C
1 : Source
2 : Drain
0.2± 0.1
3 : Gate 1
4 : Gate 2
S-Mini Type Package (4-pin)
Electrical Characteristics (Ta = 25?C)
Paramete |
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