SS9013 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SS9013

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 0.625

Kollektor-Basis-Sperrspannung (Ucb): 40

Kollektor-Emitter-Sperrspannung (Uce): 20

Emitter-Basis-Sperrspannung (Ueb): 0

Kollektorstrom (Ic): 0.5

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft):

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 64

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für SS9013

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1.1. ss9013.pdf Size:40K _fairchild_semi

Current VEB =3V, IC =0 100 nA hFE1 DC Current Gain VCE =1V, IC =50mA 64 120 202 hFE2 VCE =1V, IC =500mA 40 120 VCE (sat) Collector-Emitter Saturation Voltage IC =500mA, IB =50mA 0.16 0.6 V VBE (sat) Base-Emitter Saturation Voltage IC =500mA, IB =50mA 0.91 1.2 V VBE (on) Base-Emitter On Voltage VCE =1V, IC =10mA 0.6 0.67 0.7 V hFE Classification Classification D E F G H hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202 ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 SS

1.2. ss9013.pdf Size:53K _samsung

hFE1 VCE =1V, IC =50mA 64 120 202 hFE2 VCE =1V, IC =500mA 40 120 Collector-Emitter Saturation Voltage VCE (sat) IC =500mA, IB =50mA 0.16 0.6 V IC =500mA, IB =50mA Base-Emitter Saturation Voltage VBE (sat) 0.91 1.2 V VCE =1V, IC =10mA Base-Emitter On Voltage VBE (on) 0.6 0.67 0.7 V h CLASSIFICATION FE Classification D E F G H hFE(1) 64-91 78-112 96-135 112-166 144-202 SS9013 NPN EPITAXIAL SILICON TRANSISTOR

5.1. ss9014.pdf Size:38K _fairchild_semi

80 1000 VCE (sat) Collector-Base Saturation Voltage IC =100mA, IB =5mA 0.14 0.3 VBE (sat) Base-Emitter Saturation Voltage IC =100mA, IB =5mA 0.84 1.0 V VBE (on) Base-Emitter On Voltage VCE =5V, IC =2mA 0.58 0.63 0.7 V Cob Output Capacitance VCB =10V, IE =0 2.2 3.5 pF f=1MHz fT Current Gain Bandwidth Product VCE =5V, IC =10mA 150 270 MHz NF Noise Figure VCE =5V, IC =0.2mA 0.9 10 dB f=1KHz, RS=2K? hFE Classification Classification A B C D hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 ©20

5.2. ss9015.pdf Size:41K _fairchild_semi

0mA, IB = -5mA -0.7 VBE (sat) Base-Emitter Saturation Voltage IC = -100mA, IB = -5mA -1.0 V VBE (on) Base-Emitter On Voltage VCE = -5V, IC = -2mA -0.6 -0.75 V Cob Output Capacitance VCB = -10V, IE =0 4.5 7.0 pF f=1MHz fT Current Gain Bandwidth Product VCE = -5V, IC = -10mA 100 190 MHz NF Noise Figure VCE = -5V, IC = -0.2mA 0.7 10 dB f=1KHz, RS=1K? hFE Classification Classification A B C D hFE 60 ~ 150 100 ~ 300 200 ~ 600 400 ~ 1000 ©2002 Fairchild Semiconductor Corporation Rev. B2, No

5.3. ss9018.pdf Size:40K _fairchild_semi

A 0.5 V Cob Output Capacitance VCB =10V, IE =0 1.3 1.7 pF f=1MHz fT Current Gain Bandwidth Product VCE =5V, IC =5mA 700 1100 MHz hFE Classification Classification D E F G H I hFE 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198 ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 SS9018 Typical Characteristics 10 1000 VCE = 5V 9 IB = 90µA 8 IB = 80µA 7 IB = 70µA 6 IB = 60µA IB = 50µA 5 100 IB = 40µA 4 3 I = 30µA B 2 I = 20µA B 1 IB = 10µA 0 10 0 1 2

5.4. ss9011.pdf Size:38K _fairchild_semi

mA 0.08 0.3 V VBE (on) Base-Emitter on Voltage VCE = 5V, IC = 1mA 0.65 0.7 0.75 V Cob Output Capacitance VCB = 10V, IE = 0 1.5 pF f = 1MHz 150 370 fT Current Gain Bandwidth Product VCE = 5V, IC = 1mA 2.0 MHz NF Noise Figure VCE = 5V, IC = 1.0 mA 4.0 dB f=1MHz, RS = 500? hFE Classification Classification D E F G H I hFE 28 ~ 45 39 ~ 60 54 ~ 80 72 ~ 108 97 ~ 146 132 ~ 198 ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 SS9011 Typical Characteristics 50 1000 VCE =

5.5. ss9012.pdf Size:35K _fairchild_semi

O Emitter Cut-off Current VEB = -3V, IC =0 -100 nA hFE1 DC Current Gain VCE = -1V, IC = -50mA 64 120 202 hFE2 VCE = -1V, IC = -500mA 40 90 VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V VBE (sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V hFE Classification Classification D E F G H hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202 ©2002 Fairchild Semic

5.6. ss9014.pdf Size:47K _samsung

E (sat) IC =100mA, IB =5mA 0.14 0.3 IC =100mA, IB =5mA Base-Emitter Saturation Voltage VBE (sat) 0.84 1.0 V VCE =5V, IC =2mA Base-Emitter On Voltage VBE (on) 0.58 0.63 0.7 V Output Capacitance COB VCB =10V, IE =0 2.2 3.5 pF f=1MHz VCE =5V, IC =10mA MHz 150 270 Current Gain-Bandwidth Product fT VCE =5V, IC =0.2mA 0.9 10 dB Noise Figure NF f=1KHz, RS=2 h CLASSIFICATION FE Classification A B C D hFE 60-150 100-300 200-600 400-1000 SS9014 NPN EPITAXIAL SILICON TRANSISTOR

5.7. ss9015.pdf Size:59K _samsung

B = -5mA Base-Emitter Saturation Voltage VBE (sat) -0.82 -1.0 V VCE = -5V, IC = -2mA -0.6 -0.65 -0.75 V Base-Emitter On Voltage VBE (on) Output Capacitance COB VCB = -10V, IE =0 4.5 7.0 pF f=1MHz VCE = -5V, IC = -10mA MHz 100 190 Current Gain-Bandwidth Product fT VCE = -5V, IC = -0.2mA 0.7 10 dB Noise Figure NF f=1KHz, RS=1 h CLASSIFICATION FE Classification A B C hFE 60-150 100-300 200-600 SS9015 PNP EPITAXIAL SILICON TRANSISTOR

5.8. ss9018.pdf Size:48K _samsung

=0 1.3 1.7 pF f=1MHz VCE =5V, IC =5mA Current Gain-Bandwidth Product MHz fT 700 1100 h CLASSIFICATION FE Classification D E F G H I hFE 28-45 39-60 54-80 72-108 97-146 132-198 SS9018 NPN EPITAXIAL SILICON TRANSISTOR

5.9. ss9011.pdf Size:50K _samsung

ter Voltage 0.7 0.75 V 0.65 COB VCB = 10V, IE = 0 Output Capacitance pF 1.5 f = 1MHz Current Gain-Bandwidth Product fT VCE = 5V, IC = 1mA 370 MHz 150 VCE = 5V, IC = 1.0 mA 2.0 dB Noise Figure NF 4.0 f=1MHz, RS = 500 h CLASSIFICATION FE Classification D E F G H I hFE 28-45 39-60 54-80 72-108 97-146 132-198 SS9011 NPN EPITAXIAL SILICON TRANSISTOR

5.10. ss9012.pdf Size:46K _samsung

nA DC Current Gain hFE1 VCE = -1V, IC = -50mA 64 120 202 hFE2 VCE = -1V, IC = -500mA 40 90 Collector-Emitter Saturation Voltage VCE (sat) IC = -500mA, IB = -50mA -0.18 -0.6 V IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE (sat) -0.95 -1.2 V VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 Base-Emitter On Voltage VBE (on) V h CLASSIFICATION FE Classification D E F G H hFE(1) 64-91 78-112 96-135 112-166 144-202 SS9012 PNP EPITAXIAL SILICON TRANSISTOR

Anderen transistoren... SQ918 , SQ918F , SS1906 , SS2503A , SS8050 , SS8550 , SS9011 , SS9012 , 2SC114 , SS9014 , SS9015 , SS9016 , SS9018 , ST03 , ST10 , ST1026 , ST1050 .