TIP31 . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: TIP31

Werkstoff: Si

Polarity: NPN

Gesamt-Verlustleistung (Pc): 40

Kollektor-Basis-Sperrspannung (Ucb): 80

Kollektor-Emitter-Sperrspannung (Uce): 40

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 3

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 3

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 20

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für TIP31

TIP31 - PDF-Dokument zum Download bereitstellen...

1.1. tip31are.pdf Size:196K _motorola

IIIII III III IIIIIIIIIII III III SILICON IIII IIII III IIII IIII III IIII IIII III TIP32A TIP32B TIP32C Rating Symbol Unit 60–80–100 VOLTS IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII IIIIIIII IIII III IIII IIII III IIII IIII III IIII IIII III Collector–Emitter Voltage VCEO 60 80 100 Vdc 40 WATTS IIIIIIIIIII III III IIIIIIIIIII III III IIIIIIIIIII IIIIIIII IIIIIIIIIII IIIIIIII IIII III IIII III IIII IIII III IIII IIII III Collector–Base Voltag

1.2. tip31-32.pdf Size:75K _st2

types voltage and current values are negative 1/5 September 1997 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA o R Thermal Resistance Junction-case Max 3.12 C/W thj-ca se o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for TIP31A/32A CEO Current (I = 0) V = 30 V 0.3 mA B CE for TIP31C/32B/32C V = 60 V 0.3 mA CE ICES

1.3. tip31,32.pdf Size:173K _st2

re negative 1/5 October 1999 TIP31A/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 3.12 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off for TIP31A/32A VCE = 30 V 0.3 mA Current (IB = 0) for TIP31C/32B/32C VCE = 60 V 0.3 mA ICES Collector Cut-off for TIP31A/32A VCE = 60 V 0.2 mA

1.4. tip31.pdf Size:39K _st2

are negative. 1/4 October 1995 TIP31A/TIP31B/TIP31C/TIP32A/TIP32B/TIP32C THERMAL DATA o Rthj-ca se Thermal Resistance Junction-case Max 3.12 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off for TIP31A/32A Current (I = 0) V = 30 V 0.3 mA B CE for TIP31B/31C/32B/32C V = 60 V 0.3 mA CB ICES Collector Cut-off for TIP31A

1.5. tip31a.pdf Size:135K _st2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/10 TIP31A Absolute maximim ratings 1 Absolute maximim ratings Table 1. Absolute maximim ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 5V IC Collector current 3 A ICM Collector peak curr

1.6. tip31c.pdf Size:136K _st2

. . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2/10 TIP31C Absolute maximim ratings 1 Absolute maximim ratings Table 1. Absolute maximim ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0)

1.7. tip31_tip31a_tip31b_tip31c.pdf Size:526K _fairchild_semi

1.8. tip31.pdf Size:37K _fairchild_semi

ff Current : TIP31/31A VCE = 30V, IB = 0 0.3 mA : TIP31B/31C VCE = 60V, IB = 0 0.3 mA ICES Collector Cut-off Current : TIP31 VCE = 40V, VEB = 0 200 µA : TIP31A VCE = 60V, VEB = 0 200 µA : TIP31B VCE = 80V, VEB = 0 200 µA : TIP31C VCE = 100V, VEB = 0 200 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE * DC Current Gain VCE = 4V, IC = 1A 25 VCE = 4V, IC = 3A 10 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V VBE(sat) * Base-Emitter Saturation

1.9. tip31abc.pdf Size:39K _fairchild_semi

1.10. tip31-a-b-c-to220.pdf Size:131K _mcc

TER TJ Junction Temperature 150 ? TSTG Storage Temperature Range -65 to +150 ? Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Max Units Min DIMENSIONS VCEO(SUS) 40 INCHES MM TIP31 Collector-emitter sustaining voltage 60 DIM MIN MAX MIN MAX NOTE V TIP31A ( IC=30mA; IB=0) 80 A .560 .625 14.22 15.88 TIP31B 100 B .380 .420 9.65 10.67 TIP31C C .100 .135 2.54 3.43 Collector-emitter Saturation Voltage D .230 .270 5.84 6.86 VCE(

1.11. tip31_tip31a_tip31b_tip31c_to-220.pdf Size:256K _mcc

2 PC Total Device Dissipation(Tc=25?) 40 W K ? TJ Junction Temperature 150 TSTG Storage Temperature Range ? -65 to +150 V L Electrical Characteristics @ 25OC Unless Otherwise Specified J D Symbol Parameter Min Max Units R G VCEO(SUS) 40 N PIN 1. BASE TIP31 Collector-emitter sustaining voltage 60 PIN 2. COLLECTOR TIP31A V PIN 3. EMITTER ( IC=30mA; IB=0) 80 TIP31B 100 TIP31C DIMENSIONS Collector-emitter Saturation Voltage VCE(sat) V INCHE

1.12. tip31-a-b-c_tip32-a-b-c.pdf Size:126K _onsemi

III TIP31A, TIP32A TIP31B, TIP32B 80 IIIIIIIIIIII III IIII III TIP31C, TIP32C 100 TIP3xx = Device Code IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII III Collector-Base Voltage TIP31, TIP32 VCB 40 Vdc xx = 1, 1A, 1B, 1C, TIP31A, TIP32A 60 IIIIIIIIIIII III IIII III TIP31B, TIP32B 80 2, 2A, 2B, 2C, TIP31C, TIP32C 100 A = Assembly Location IIIIIIIIIIII III IIII III Y = Year Emitter-Base Voltage VEB 5.0 Vdc IIIIIIIIIIII III IIIIIIIIIIII III IIIIIIIIIIII III IIII III IIII

1.13. tip31c.pdf Size:89K _utc

A Collector-Emitter Saturation Voltage(*) VCE(sat) IC=3A,IB=375mA 1.2 V Base-Emitter On Voltage(*) VBE(on) IC=3A,VCE=4V 1.8 V DC Current Gain(*) hFE IC=1A,VCE=4V 25 IC=3A,VCE=4V 10 50 Current Gain Bandwidth Product fT IC=0.5A,VCE=10V 3 MHz f=1MHz *Pulse Test: PW<=300µs,Duty Cycle<=2% 1 UTC UNISONIC TECHNOLOGIES CO. LTD UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR 2 UTC UNISONIC TECHNOLOGIES CO. LTD

1.14. tip31-a-b-c.pdf Size:85K _bourns

(see Note 4) ?LIC2 32 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 250 °C NOTES: 1. This value applies for tp ? 0.3 ms, duty cycle ? 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L =

1.15. tip31.pdf Size:89K _secos

arameter Symbol Min. Typ. Max. Unit Test Conditions TIP31 40 - - TIP31A 60 - - Collector - Base Breakdown V(BR)CBO V IC=1mA, IE=0 Voltage TIP31B 80 - - TIP31C 100 - - TIP31 40 - - TIP31A 60 - - Collector - Emitter V(BR)CEO V IC=30mA, IB=0 Breakdown Voltage1 TIP31B 80 - - TIP31C 100 - - Emitter - Base Breakdown Voltage V 5 - - V I =1mA, I =0 (BR)EBO E C TIP31 V =40V, I =0 CB E TIP31A V =60V, I =0 CB E Collector Cut - Off Current I - - 200 µA CBO TIP31B V

1.16. tip31cf.pdf Size:436K _kec

IC=30mA, IB=0 Collector Emitter Sustaining Voltage 100 - - V ICEO VCE=60V, IB=0 Collector Cut-off Current - - 0.3 mA ICES VCE=100V, VEB=0 Collector Cut-off Current - - 200 A IEBO VBE=5V, IC=0 Emitter Cut-off Current - - 1 mA VCE=4V, IC=1A 25 - - hFE DC Current Gain VCE=4V, IC=3A 10 - 50 VCE(sat) IC=3A, IB=375mA Collector-Emitter Saturation Voltage - - 1.2 V VBE(on) VCE=4V, IC=3A Base-Emitter On Voltage - - 1.8 V fT VCE=10V, IC=500mA f=1MHz Transition Frequency 3.0 - - MHz

1.17. tip31c.pdf Size:68K _kec

ing Voltage 100 - - V ICEO VCE=60V, IB=0 Collector Cut-off Current - - 0.3 mA ICES VCE=100V, VEB=0 Collector Cut-off Current - - 200 A IEBO VBE=5V, IC=0 Emitter Cut-off Current - - 1 mA VCE=4V, IC=1A 25 - - hFE DC Current Gain VCE=4V, IC=3A 10 - 50 VCE(sat) IC=3A, IB=375mA Collector-Emitter Saturation Voltage - - 1.2 V VBE(on) VCE=4V, IC=3A Base-Emitter On Voltage - - 1.8 V fT VCE=10V, IC=500mA f=1MHz Transition Frequency 3.0 - - MHz 1997. 8. 13 Revision No : 0 1/2 E F

1.18. tip31d.pdf Size:231K _inchange_semiconductor

ERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V Collector-Emitter Saturation Voltage IC= 3A; IBB= 0.75A 2.5 V VCE(sat) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V VBE(on) ICES Collector Cutoff Current VCE= 160V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 90V; IBB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE

1.19. tip31f.pdf Size:231K _inchange_semiconductor

ERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 160 V Collector-Emitter Saturation Voltage IC= 3A; IBB= 0.75A 2.5 V VCE(sat) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V VBE(on) ICES Collector Cutoff Current VCE= 200V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 90V; IBB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE

1.20. tip31e.pdf Size:231K _inchange_semiconductor

ERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 140 V Collector-Emitter Saturation Voltage IC= 3A; IBB= 0.75A 2.5 V VCE(sat) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V VBE(on) ICES Collector Cutoff Current VCE= 180V; VEB= 0 0.2 mA ICEO Collector Cutoff Current VCE= 90V; IBB= 0 0.3 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE

1.21. tip31_31a_31b_31c.pdf Size:149K _inchange_semiconductor

1.22. tip31_abc.pdf Size:204K _lge

nt TIP31 VCB=40V, IE=0 TIP31A VCB=60V, IE=0 ICBO 200 ?A VCB=80V, IE=0 TIP31B VCB=100V, IE=0 TIP31C ICEO VCE= 30V, IB= 0 Collector cut-off current TIP31/31A 0.3 mA TIP31B/31C VCE= 60V, IB= 0 Emitter cut-off current IEBO VEB=5V, IC=0 1 mA hFE(1) VCE= 4V, IC= 1A 25 DC current gain hFE(2) VCE=4 V, IC= 3A 10 50 Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.375A 1.2 V Base-emitter voltage VBE(on) VCE= 4V, IC=3A 1.8 V Transition frequency fT VCE=10V , IC=0.5

Anderen transistoren... TIP3054 , TIP3055 , TIP30A , TIP30B , TIP30C , TIP30D , TIP30E , TIP30F , SS8050 , TIP31A , TIP31B , TIP31C , TIP31D , TIP31E , TIP31F , TIP32 , TIP32A .