TIP42F . Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: TIP42F

Werkstoff: Si

Polarity: PNP

Gesamt-Verlustleistung (Pc): 65

Kollektor-Basis-Sperrspannung (Ucb): 200

Kollektor-Emitter-Sperrspannung (Uce): 160

Emitter-Basis-Sperrspannung (Ueb): 5

Kollektorstrom (Ic): 6

Höchste Sperrschichttemperatur (Tj), °C: 150

Transitfrequenz (ft): 3

Kollektor-Kapazität (Cc), pF:

Kurzschluss-Stromverstärkung (hfe): 20

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für TIP42F

TIP42F - PDF-Dokument zum Download bereitstellen...

1.1. tip42f.pdf Size:236K _inchange_semiconductor

NCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42F ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -160 V Collector-Emitter Saturation Voltage IC= -6A; IBB= -1.5A -1.5 V VCE(sat) Base-Emitter On Voltage IC= -6A; VCE= -4V -2.0 V VBE(on) ICES Collector Cutoff Current VCE= -200V; VBE= 0 -0.4 mA ICEO Collector Cutoff Current VC

5.1. tip41c_tip42c.pdf Size:275K _st2

. . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 TIP41C - TIP4

5.2. tip41a_tip42a.pdf Size:205K _st2

IC = 0) 5V IC Collector Current 6 A ICM Collector Peak Current 10 A IB Base Current 3 mA Total dissipation at Tcase = 25°C 65 W PTOT Tamb = 25°C 2 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Note: For PNP types voltage and current values are negative 2/10 TIP42A 2 Electrical Characteristics 2 Electrical Characteristics Tcase = 25°C; unless otherwise specified Table 2. Electrical Characteristics Symbol Parameter Test Conditions

5.3. tip42_tip42a_tip42b_tip42c.pdf Size:242K _fairchild_semi

5.4. tip42abc.pdf Size:38K _fairchild_semi

5.5. tip42.pdf Size:46K _samsung

-0.7 mA : TIP42B/42C VCE = -60V, IB = 0 -0.7 mA Collector Cutoff Current : TIP42 ICES VCE = -40V, VEB = 0 -400 uA : TIP42A VCE = -60V, VEB = 0 -400 uA : TIP42B VCE = -80V, VEB = 0 -400 uA : TIP42C VCE = -100V, VEB = 0 -400 uA Emitter Cutoff Current IEBO VEB = -5V, IC = 0 -1 mA *DC Current Gain hFE VCE = -4V, IC = -0.3A 30 VCE = -4V, IC = -3A 15 75 *Collector-Emitter Saturation Voltage VCE(sat) IC = -6A, IB = -600mA -1.5 V *Base-Emitter Saturation Voltage VBE(on) VCE = -4V, IC = -6

5.6. tip42_tip42a_tip42b_tip42c_to-220.pdf Size:237K _mcc

on(Ta=25?) -2 W PC K Total Device Dissipation(Tc=25?) 65 W TJ Junction Temperature 150 ? TSTG Storage Temperature Range -65 to +150 ? V L J Electrical Characteristics @ 25OC Unless Otherwise Specified D Symbol Parameter Min Max Units R G PIN 1. BASE VCEO(SUS) -40 N PIN 2. COLLECTOR TIP42 Collector-emitter sustaining voltage -60 PIN 3. EMITTER TIP42A V ( IC=-30mA; IB=0) -80 TIP42B -100 TIP42C DIMENSIONS INCHES MM Collector-emitter Saturation Voltag

5.7. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

Derate above 25°C 0.52 W/°C A = Assembly Location Y = Year Total Power Dissipation @ TA = 25°C PD 2.0 W WW = Work Week Derate above 25°C 0.016 W/°C G = Pb-Free Package Unclamped Inductive Load Energy E 62.5 mJ (Note 1) Operating and Storage Junction, TJ, Tstg – 65 to °C ORDERING INFORMATION Temperature Range +150 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit T

5.8. tip42c.pdf Size:73K _utc

-5V,Ic=0 -1 mA Collector-Emitter Saturation Voltage(*) VCE(sat) IC=-6A,IB=-600mA -1.5 V Base-Emitter On Voltage(*) VBE(on) IC=-6A,VCE=-4V -2.0 V DC Current Gain(*) hFE IC=-300mA,VCE=-4V 30 IC=-3A,VCE=-4V 15 75 Current gain Bandwidth Product fT VCE=-10V,Ic=-500mA, 3 MHz f=1MHz *Pulse Test: PW<=300µs, Duty Cycle<=2% 1 UTC UNISONIC TECHNOLOGIES CO. LTD UTC TIP42C NPN EPITAXIAL PLANAR TRANSISTOR 2 UTC UNISONIC TECHNOLOGIES CO. LTD

5.9. tip41_tip42.pdf Size:189K _mospec

5.10. tip42cf.pdf Size:435K _kec

EO(SUS) IC=-30mA, IB=0 Collector Emitter Sustaining Voltage -100 - - V ICEO VCE=-60V, IB=0 Collector Cut-off Current - - -0.7 mA ICES VCE=-100V, VEB=0 Collector Cut-off Current - - -400 A IEBO VEB=-5V, IC=0 Emitter Cut-off Current - - -1 mA VCE=-4V, IC=-0.3A 30 - - hFE DC Current Gain VCE=-4V, IC=-3A 15 - 75 VCE(sat) IC=-6A, IB=-600mA Collector-Emitter Saturation Voltage - - -1.5 V VBE(on) VCE=-4V, IC=-6A Base-Emitter On Voltage - - -2.0 V fT VCE=-10V, IC=-500mA Transition F

5.11. tip42c.pdf Size:66K _kec

Sustaining Voltage -100 - - V ICEO VCE=-60V, IB=0 Collector Cut-off Current - - -0.7 mA ICES VCE=-100V, VEB=0 Collector Cut-off Current - - -400 A IEBO VEB=-5V, IC=0 Emitter Cut-off Current - - -1 mA VCE=-4V, IC=-0.3A 30 - - hFE DC Current Gain VCE=-4V, IC=-3A 15 - 75 VCE(sat) IC=-6A, IB=-600mA Collector-Emitter Saturation Voltage - - -1.5 V VBE(on) VCE=-4V, IC=-6A Base-Emitter On Voltage - - -2.0 V fT VCE=-10V, IC=-500mA Transition Frequency 3.0 - - MHz 1999. 11. 16 Rev

5.12. tip42_42a_42b_42c.pdf Size:180K _inchange_semiconductor

NCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT TIP42 -40 TIP42A -60 Collector-Emitter IC= -30mA; IB= 0 V VCEO(SUS) Sustaining Voltage TIP42B -80 TIP42C -100 Collector-Emitter Saturation Voltage IC= -6A ;IB= -0.6A -1.5 V VCE(sat) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V VBE(on) TIP42 VCE= -40V; VEB= 0 TIP42A

5.13. tip42e.pdf Size:236K _inchange_semiconductor

NCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42E ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -140 V Collector-Emitter Saturation Voltage IC= -6A; IBB= -1.5A -1.5 V VCE(sat) Base-Emitter On Voltage IC= -6A; VCE= -4V -2.0 V VBE(on) ICES Collector Cutoff Current VCE= -180V; VBE= 0 -0.4 mA ICEO Collector Cutoff Current VC

5.14. tip42_abc.pdf Size:208K _lge

tage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current TIP42 VCB=-40V, IE=0 TIP42A VCB=-60V, IE=0 ICBO -0.4 mA VCB=-80V, IE=0 TIP42B VCB=-100V, IE=0 TIP42C VCE= -30V, IB= 0 Collector cut-off current TIP42/42A ICEO -0.7 mA TIP42B/42C VCE= -60V, IB= 0 Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA hFE(1) VCE=-4V, IC=-0.3A 30 DC current gain hFE(2) VCE=-4 V, IC= -3A 15 75 Collector-emitter saturation voltage VCE(sat) IC=-6A, IB=-0.6A -1.5 V Base-emitter voltage

5.15. tip42.pdf Size:747K _wietron

akdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current TIP42 VCB=-40V, IE=0 TIP42A VCB=-60V, IE=0 ICBO -0.4 mA VCB=-80V, IE=0 TIP42B VCB=-100V, IE=0 TIP42C VCE= -30V, IB= 0 Collector cut-off current TIP42/42A ICEO -0.7 mA TIP42B/42C VCE= -60V, IB= 0 Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA hFE(1) VCE=-4V, IC=-0.3A 30 DC current gain hFE(2) VCE=-4 V, IC= -3A 15 75 Collector-emitter saturation voltage VCE(sat) IC=-6A, IB=-0.6A -1.5 V Base-

5.16. htip42c.pdf Size:37K _hsmc

. 2 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................................................... -100 V BVCEO Collector to Emitter Voltage................................................................................................................... -100 V BVEBO Emitter to Base Voltage.................................................................................................................

Anderen transistoren... TIP41E , TIP41F , TIP42 , TIP42A , TIP42B , TIP42C , TIP42D , TIP42E , BC548 , TIP47 , TIP48 , TIP49 , TIP50 , TIP501 , TIP502 , TIP503 , TIP504 .