BCV64B
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BCV64B
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.25
Kollektor-Basis-Sperrspannung (Ucb): 30
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 6
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C: 150
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF: 4
Kurzschluss-Stromverstärkung (hfe): 220
Transistorgehäuse: SOT143B
Ersatz (vergleichstyp) für BCV64B
BCV64B
PDF doc:
1.1. bcv64b_3.pdf  Size:51K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV64B
PNP general purpose double
transistor
1999 May 21
Product specification
Supersedes data of 1997 Mar 10
Philips Semiconductors Product specification
PNP general purpose double transistor BCV64B
FEATURES PINNING
• Low current (max. 100 mA)
PIN DESCRIPTION
• Low voltage (max. 30 and 6 V).
1 collector TR2 and base TR1
2 collector TR1
APPLICATIONS
3 emitter TR1 and TR2
• General purpose switching and amplification 4 base TR2
• For use in Schmitt-trigger applications.
DESCRIPTION
4
handbook, halfpage 3
21
PNP double transistor in a SOT143B plastic package.
NPN complement: BCV63B.
TR1
TR2
MARKING
1 2
34
TYPE NUMBER MARKING CODE
Top view MAM291
BCV64B C96
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
TR1 --30 V
TR2 --6V
VCEO collector-emit |
1.2. bcv64b.pdf Size:277K _philips  |
 | BCV64B
PNP general-purpose double transistor
Rev. 4 — 2 August 2010 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BCV64B SOT143B - BCV63B
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
IC collector current - - -100 mA
Transistor TR1
VCEO collector-emitter voltage open base - - -30 V
hFE DC current gain VCE = -5mV; 220 - 475
IC = -2mA
Transistor TR2
VCEO collector-emitter voltage open base - - -6 V
[1]
hFE DC current gain VCE = -700 V; 220 - 475
IC = -2mA
[1] Due to ma |
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