BFR520
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BFR520
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.3
Kollektor-Basis-Sperrspannung (Ucb): 20
Kollektor-Emitter-Sperrspannung (Uce): 15
Emitter-Basis-Sperrspannung (Ueb): 2.5
Kollektorstrom (Ic): 0.07
Höchste Sperrschichttemperatur (Tj), °C: 175
Transitfrequenz (ft): 9000
Kollektor-Kapazität (Cc), pF: 0.5
Kurzschluss-Stromverstärkung (hfe): 60
Transistorgehäuse: SOT23
Ersatz (vergleichstyp) für BFR520
BFR520
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1.1. bfr520.pdf  Size:116K _philips  |
 | V; - 0.4 - pF
f =1MHz
fT transition frequency IC = 20 mA; VCE =6V; - 9 - GHz
f =1GHz
GUM maximum unilateral IC = 20 mA; VCE =6V;
power gain Tamb =25°C
f = 900 MHz - 15 - dB
f = 2 GHz - 9 - dB
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
Table 1: Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
?s21?2 insertion power gain IC = 20 mA; VCE =6V; 13 14 - dB
Tamb =25°C;
f = 900 MHz
NF noise figure ?s = ?opt; Tamb =25 °C
IC = 5 mA; VCE =6V; - |
1.2. bfr520_cnv_2.pdf Size:103K _philips  |
 | ase voltage - - 20 V
VCES collector-emitter voltage RBE =0 - - 15 V
IC DC collector current - - 70 mA
Ptot total power dissipation up to Ts = 97 °C; note 1 - - 300 mW
hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250
Cre feedback capacitance IC =ic = 0; VCB = 6 V; f = 1 MHz - 0.4 - pF
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz - 9 - GHz
GUM maximum unilateral IC = 20 mA; VCE = 6 V; - 15 - dB
power gain Tamb = 25 °C; f = 900 MHz
IC = 20 mA; VCE = 6 V; - 9 - dB
Tamb = 25 |
1.3. bfr520t.pdf Size:272K _philips  |
 | Ts =75 ?C; note 1 ? ? 150 mW
hFE DC current gain IC =20 mA; VCE =6V; Tj =25?C 60 120 250
fT transition frequency IC =20 mA; VCE = 6 V; f = 1 GHz; ? 9 ? GHz
Tamb =25 ?C
GUM maximum unilateral power IC =20 mA; VCE = 6 V; f = 900 MHz; ? 15 ? dB
gain Tamb =25 ?C
F noise figure IC =5mA; VCE = 6 V; f = 900 MHz; ? 1.1 1.6 dB
Tamb =25 ?C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMB |
1.4. bfr520t_2.pdf Size:109K _philips  |
 | 75 °C; note 1 - - 150 mW
hFE DC current gain IC = 20 mA; VCE =6V; Tj =25°C 60 120 250
fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; - 9 - GHz
Tamb =25 °C
GUM maximum unilateral power IC = 20 mA; VCE = 6 V; f = 900 MHz; - 15 - dB
gain Tamb =25 °C
F noise figure IC = 5 mA; VCE = 6 V; f = 900 MHz; - 1.1 1.6 dB
Tamb =25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMB |
1.5. bfr520.pdf Size:194K _inchange_semiconductor  |
 | V 60 250
fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz 9 GHz
COB Output Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF
PG Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB
PG Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB
?S21e?2 Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 13 14 dB
NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB
NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB
2
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INCHANGE Semiconductor isc RF Product Sp |
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