ZXTP2008Z
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: ZXTP2008Z
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 2.1
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 30
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 5.5
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 110
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: SOT89
Ersatz (vergleichstyp) für ZXTP2008Z
ZXTP2008Z
- PDF-Dokument zum Download bereitstellen...
1.1. zxtp2008z.pdf  Size:114K _diodes  |
 |
(a)
Continuous collector current IC -5.5 A
Peak pulse current ICM -20 A
(a)
Power dissipation at TA =25°C PD 1.5 W
Linear derating factor 12 mW/°C
(b)
Power dissipation at TA =25°C PD 2.1 W
Linear derating factor 16.8 mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
(a)
Junction to Ambient R JA 83 °C/W
(b)
Junction to Ambient R JA 60 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with |
2.1. zxtp2008g.pdf Size:115K _diodes  |
 | ollector current IC -5.5 A
Peak pulse current ICM -20 A
(a)
Power dissipation at TA =25°C PD 3.0 W
Linear derating factor 24 mW/°C
(b)
Power dissipation at TA =25°C PD 1.6 W
Linear derating factor 12.8 mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
(a)
Junction to ambient R JA 42 °C/W
(b)
Junction to ambient R JA 78 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of |
3.1. zxtp2006e6.pdf Size:94K _diodes  |
 | VEBO -7.5 V
Continuous collector current IC -3.5 A
Peak pulse current ICM -10 A
(a)
Power dissipation at TA =25°C PD 1.1 W
Linear derating factor mW/°C
8.8
(b)
Power dissipation at TA =25°C PD 1.7 W
Linear derating factor mW/°C
13.6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
(a)
Junction to ambient R JA 113 °C/W
(b)
Junction to ambient R JC 73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still a |
3.2. zxtp2009z.pdf Size:126K _diodes  |
 | er-base voltage BVEBO -7.5 V
(b)
Continuous collector current IC -5.5 A
Peak pulse current ICM -15 A
(a)
Power dissipation at TA =25°C PD 0.9 W
Linear derating factor 7.2 mW/°C
(b)
Power dissipation at TA =25°C PD 1.5 W
Linear derating factor 12 mW/°C
(c)
Power dissipation at TA =25°C PD 2.1 W
Linear derating factor 16.8 mW/°C
(d)
Power dissipation at TA =25°C PD 3 W
Linear derating factor 24 mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE |
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