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MMDT5401
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MMDT5401
Werkstoff: Si
Polarity: PNP*PNP
Gesamt-Verlustleistung (Pc): 0.2
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 150
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.2
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 60
Transistorgehäuse: SOT363
Ersatz (vergleichstyp) für MMDT5401
MMDT5401
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1.1. mmdt5401.pdf  Size:164K _diodes  |
 | .006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current – Continuous (Note 1) IC -200 mA
Power Dissipation (Note 1,2) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W
R?JA
Operating and Storage and Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 |
1.2. mmdt5401_sot-363.pdf Size:225K _mcc  |
 | O Collector-Emitter Breakdown Voltage -150 --- Vdc
(IC=-1mAdc, IB=0)
H
V(BR)CBO Collector-Base Breakdown Voltage -160 --- Vdc
(IC=-100uAdc, IE=0)
M
K
V(BR)EBO Collector-Emitter Breakdown Voltage -5 --- Vdc
J
(IE=-10uAdc, IC=0)
D
L
ICBO Collector Cutoff Current -- 0.05 uA
(VCB=-120Vdc,IE=0)
IEBO Emitter Cutoff Current --- -0.05 uA
(VEB=-3Vdc,IC=0)
DC Current Gain
DIMENSIONS
hFE (IC=-1mAdc, VCE=-5Vdc) 50 ---
INCHES MM
(IC=-10mAdc, VCE=-5Vdc) 60 240 ---
DIM MIN MAX MIN MA |
1.3. mmdt5401.pdf Size:527K _secos  |
 | rwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100µA, V
IE=0
-160
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 V
-150
Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 V
-5
Collector cut-off current ICBO VCB=-120 V , I E=0 -0.05 µA
Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 µA
hFE(1) VCE=-5 V, IC= -1mA 50
DC current gain hFE(2) VCE=-5 V, IC= -10mA 60 240
hFE(3) VCE=-5 V, IC= -50mA 50 |
1.4. mmdt5401.pdf Size:194K _lge  |
 | -3V , IC=0 -0.05 ?A
hFE(1) VCE=-5 V, IC= -1mA 50
DC current gain hFE(2) VCE=-5 V, IC= -10mA 60 240
hFE(3) VCE=-5 V, IC= -50mA 50
VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V
VBE(sat)1 IC= -10 mA, IB=-1mA -1 V
Base-emitter saturation voltage
VBE(sat)2 IC= -50 mA, IB=-5mA -1 V
Transition frequency f T VCE= -10V, IC= -10mA,f = 100MHz 100 MHz
Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 pF
Noise Figure NF VCE= -5.0V, |
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