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MMSTA42
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: MMSTA42
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0.2
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 300
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.2
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 50
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 40
Transistorgehäuse: SOT323
Ersatz (vergleichstyp) für MMSTA42
MMSTA42
- PDF-Dokument zum Download bereitstellen...
1.1. mmsta42.pdf  Size:112K _diodes  |
 | tion: See Page 3
B E
• Weight: 0.006 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current (Note 1) IC 200 mA
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W
R?JA
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @ |
1.2. mmsta42_sot-323.pdf Size:194K _mcc  |
 | ARACTERISTICS
K
V(BR)CEO Collector-Emitter Breakdown Voltage 300 --- Vdc
DIMENSIONS
(IC=1.0mAdc, IB=0)
INCHES MM
V Collector-Base Breakdown Voltage 300 --- Vdc
(BR)CBO
DIM MIN MAX MIN MAX NOTE
(IC=100uAdc, IE=0)
A .071 .087 1.80 2.20
V Collector-Emitter Breakdown Voltage 6.0 --- Vdc
(BR)EBO B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
(IE=100uAdc, IC=0)
D .026 Nominal 0.65Nominal
I Collector-Base Cutoff Current --- 100 nAdc
CBO
E .047 .055 1.20 1.40
(VCB=200Vdc,IE=0)
F .01 |
1.3. mmsta42.pdf Size:610K _htsemi  |
 | ) VCE=10V,IC=10mA 100 200
hFE(3) VCE=10V,IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V
Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz
1
JinYu
www.htsemi.com
semiconductor
Date:2011/05
MMST5551
2
JinYu
www.htsemi.com
semiconductor
Date:2011/05
MMST5551
3
JinYu
www.htsemi.com
semiconductor
Date:2011/05
|
1.4. mmsta42.pdf Size:215K _lge  |
 | E(1) VCE=10V,IC=1mA 60
DC current gain hFE(2) VCE=10V,IC=10mA 100 200
hFE(3) VCE=10V,IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V
Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz
MMSTA42
SOT-323 Transistor (NPN)
MMSTA42
SOT-323 Transistor (NPN)
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