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BC807-16L
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: BC807-16L
Werkstoff: Si
Polarity: PNP
Gesamt-Verlustleistung (Pc): 0.225
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 45
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.5
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 100
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 100
Transistorgehäuse: SOT23-3
Ersatz (vergleichstyp) für BC807-16L
BC807-16L
- PDF-Dokument zum Download bereitstellen...
1.1. bc807-16lt1-25lt1-40lt1.pdf  Size:118K _onsemi  |
 | resses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
(Note: Microdot may be in either location)
Operating Conditions is not implied. Extended exposure to stresses above the
*Date Code orientation and/or overbar may
Recommended Operating Conditions may affect device reliability.
vary depending upon manufacturing location.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
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2.1. bc807-16_bc807–25_bc807–40.pdf Size:90K _motorola  |
 | tic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO –45 — — V
(IC = –10 mA)
Collector–Emitter Breakdown Voltage V(BR)CES –50 — — V
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage V(BR)EBO –5.0 — — V
(IE = –1.0 mA)
Collector Cutoff Current ICBO
(VCB = –20 V) — — –100 nA
(VCB = –20 V, TJ = 150°C) — — –5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Comp |
2.2. bc807-16w.pdf Size:91K _siemens  |
 | esistance
1)
Junction ambient RthJA ? 215 K/W
Junction - soldering point RthJS ? 80
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 1 Dec-19-1996
BC 807-16W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 10 mA, IB = 0 , BC 807 W 45 - -
IC = 10 mA, IB = 0 , BC 808 W 25 - -
Collector-base breakdown voltage V(BR)CBO
IC = |
2.3. bc807-16-25-40.pdf Size:114K _diodes  |
 | gram
? 0° 8°
• Ordering Information: See Page 3
• Marking Information: See Page 3 All Dimensions in mm
- BC807-16 5A, K5A
- BC807-25 5B, K5B
B E
- BC807-40 5C, K5C
• Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM -1000 mA
Power Dissipa |
2.4. bc807-16w-25w-40w.pdf Size:355K _diodes  |
 | age 3
Approximate Weight: 0.006 grams
@TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC -500 mA
Peak Collector Current ICM -1000 mA
Peak Emitter Current IEM
-1000 mA
Power Dissipation at TSB = 50°C (Note 3) Pd 200 mW
Thermal Resistance, Junction to Ambient Air (Note 3) R JA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrica |
2.5. bc807-16-25-40_sot-23.pdf Size:196K _mcc  |
 | 10mAdc, I =0) K
C B
V(BR)CBO Collector-Base Breakdown Voltage 50 --- Vdc
DIMENSIONS
(I =10uAdc, I =0)
C E
INCHES MM
V(BR)EBO Collector-Emitter Breakdown Voltage 5.0 --- Vdc
DIM MIN MAX MIN MAX NOTE
(IE=1.0uAdc, IC=0) A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
ICBO Collector Cutoff Current --- 0.1 uAdc
C .047 .055 1.20 1.40
(VCB=45Vdc,IE=0)
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
ICEO Collector Cutoff Current --- 0.2 uAdc
F .018 .024 .45 .60
(VCE=40Vdc,IE=0)
G .0005 .00 |
2.6. bc807-16-25-40.pdf Size:337K _wietron  |
 | tron.com.tw
BC807-16/BC807-25
WE IT R ON
BC807-40
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Typ
Symbol Unit
Characteristics Min Max
Off Characteristics
Collector-Emitter Breakdown Voltage V
V(BR)CEO -45
- -
(I = -10mA)
C
Collector-Emitter Breakdown Voltage
V
V(BR)CES -50
- -
(IC=-10 µA ,VEB=0)
Emitter-Base Breakdown Voltage
V
- -
V(BR)EBO -5.0
(IE=-1.0 µA)
Collector Cutoff Current (VCB=20V)
- - 100
nA
ICBO
(VCB=20V, TA=150 C)
- - 5.0 mA
Electr |
2.7. bc807-16w-25w-40w.pdf Size:158K _wietron  |
 | eakdown Voltage
V(BR)CBO -50 - - V
IC=-10µA
Emitter-Base Breakdown Voltage
V(BR)EBO -5.0 - - V
IE=-1.0µA
ICBO
- - -0.1 µA
VCB=-20V
ICBO
- - -0.2 µA
VCE=-20V
ICBO
- - -0.1 µA
VEB=-5V
On Characteristics
DC Current Gain
100 - 250
BC807-16W
IC=-100mA, VCE=-1.0V
160 - 400
BC807-25W
250 - 600
BC807-40W
hFE
-
IC=-500mA,VCE=-1.0V)
-
40 -
Collector-Emitter Saturation Voltage
VCE(sat)
- - -0.7 V
IC=-500mA, IB=-50mA
Base-Emitter On Voltage
VBE(on) -
- -1.2
V
IC=-50 |
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.
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