DTC114YE
. Höchstzulässige Werte. Charakteristische Werte. Datenblatt. Typenbezeichnung: DTC114YE
Werkstoff: Si
Polarity: NPN
Gesamt-Verlustleistung (Pc): 0
Kollektor-Basis-Sperrspannung (Ucb): 0
Kollektor-Emitter-Sperrspannung (Uce): 50
Emitter-Basis-Sperrspannung (Ueb): 0
Kollektorstrom (Ic): 0.1
Höchste Sperrschichttemperatur (Tj), °C:
Transitfrequenz (ft): 0
Kollektor-Kapazität (Cc), pF:
Kurzschluss-Stromverstärkung (hfe): 80
Transistorgehäuse: SC75-3_SOT416-3
Ersatz (vergleichstyp) für DTC114YE
DTC114YE
- PDF-Dokument zum Download bereitstellen...
1.1. dtc114yerev1.pdf  Size:144K _motorola  |
 | less otherwise noted)
Rating Symbol Value Unit
Output Voltage VO 50 Vdc
Input Voltage VI 40 Vdc
Output Current IO 100 mAdc
DEVICE MARKING
DTC114YE = 69
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) PD *125 mW
Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C
Junction Temperature TJ 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Min Typ Max Unit
Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) VI(off) — — 0.3 Vdc
Input On Voltage (VO = 0. |
1.2. pdtc114ye_3.pdf Size:56K _motorola  |
 | e Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operat |
1.3. dtc114ye_69_ sot416.pdf Size:94K _motorola  |
 | less otherwise noted)
Rating Symbol Value Unit
Output Voltage VO 50 Vdc
Input Voltage VI 40 Vdc
Output Current IO 100 mAdc
DEVICE MARKING
DTC114YE = 69
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25°C(1) PD *125 mW
Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C
Junction Temperature TJ 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Min Typ Max Unit
Input Off Voltage (VO = 5.0 Vdc, IO = 100 µAdc) VI(off) — — 0.3 Vdc
Input On Voltage (VO = 0. |
1.4. pdtc114ye_3.pdf Size:56K _philips  |
 | e Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --6V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 150 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operat |
1.5. dtc114ye.pdf Size:140K _rohm  |
 | C114YUA DTC114YKA
2.0 0.9
0.4 0.8
0.3 0.2 0.7
(3)
(3)
(2) (1)
( ) ( )
2 1
(1) GND
(1) GND
0.65 0.65 0.95 0.95
(2) IN
0.15
ROHM : UMT3 (2) IN
0.15 ROHM : SMT3
1.3 (3) OUT
EIAJ : SC-70 1.9
EIAJ : SC-59 (3) OUT
Each lead has same dimensons
Each lead has same dimensons
Abbreviated symbol : 64
Abbreviated symbol : 64
? Packaging specifications ? Inner circuit
Package VMT3 EMT3 UMT3 SMT3
Packaging type Taping Taping Taping Taping
OUT
R1
Code T2L TL T106 T146 IN
Basic orde |
1.6. dtc114yeb.pdf Size:152K _rohm  |
 | k? R2=47k?
DTC114YEB
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -6 to +40 V
?1
Collector current Ic(max) 100 mA
Output current Io 70 mA
?2
Power dissipation PD 150 mW
Junction temperature Tj 150 °C
Range of storage temperature Tstg -55 to +150 °C
?1 Characteristics of built-in transistor
?2 Each terminal mounted on a recommended land
www.rohm.com
2009.07 - Rev.B
1/2
0c 2009 ROHM Co., Ltd. All rights reserved.
1 |
1.7. dtc114ye-yua-yka_64_sot416_323_346.pdf Size:69K _rohm 1.8. dtc114ye.pdf Size:197K _mcc  |
 |
Pd Power dissipation --- 150 --- mW 2. GND
1
2
3. OUT
Tj Junction temperature --- 150 ---
Tstg Storage temperature -55 --- 150
E
Electrical Characteristics @ 25
Symbol
Parameter Min Typ Max Unit
VI(off) Input voltage (VCC=5V, IO=100 A) --- --- 0.3 V
G H J
VI(on) (VO=0.3V, IO=1mA) 1.4 --- --- V
VO(on) Output voltage (IO/II=5mA/0.25mA) --- 0.1 0.3 V
II Input current (VI=5V) --- --- 0.88 mA K
IO(off) Output current (VCC=50V, VI=0) --- --- 0.5 A
DIMENSIONS
GI DC current gain |
1.9. dtc114ye.pdf Size:326K _htsemi  |
 | ltage VCC 50 V
Input voltage VIN -6to+40 V
IO 70 mA
Output current
IC(Max.) 100 mA
Power dissipation PC 150 200 300 mW
Junction temperature Tj 150 ?
Storage temperature Tstg -55 to+ 150 ?
Electrical characteristics (Ta=25?)
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.3 VCC=5V ,IO=100µA
Input voltage V
VI(on) 1.4 VO=0.3V ,IO=1mA
Output voltage VO(on) 0.3 V IO/II=5mA/0.25mA
Input current II 0.88 mA VI=5V
Output current IO(off) 0.5 µA VCC=50V ,VI=0
DC curr |
1.10. dtc114ye.pdf Size:293K _willas  |
 | rs consist of thin-film resistors with complete
• Lead-free parts meet environmental standards of
isolation to allow negative biasing of the input. They also have the
MIL-STD-19500 /228
advantage of almost completely eliminating parasitic effects.
• RoHS product for packing code suffix "G"
Pb-Free package is available
• Only the on/off conditions need to be set for operation, making
Halogen free product for packing code suffix "H"
.014(0.35)
RoHS product for packing code |
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